41 results on '"Emanuele Uccelli"'
Search Results
2. Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates
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Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Heinz Schmid, Lynne Gignac, Chris M. Breslin, Siegfried Karg, Emanuele Uccelli, and Heike Riel
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heterojunctions ,III-V semiconductor materials ,nanowires ,tunnel diode ,tunnel transistor ,low-power electronics. ,Electrical engineering. Electronics. Nuclear engineering ,TK1-9971 - Abstract
In this paper, we introduce p-channel InAs-Si tunnel field-effect transistors (TFETs) fabricated using selective epitaxy in nanotube templates. We demonstrate the versatility of this approach, which enables III-V nanowire integration on Si substrates of any crystalline orientation. Electrical characterization of diodes and of TFETs fabricated using this method is presented; the TFETs exhibit a good overall performance with on-currents, Ion of 6 μA/μm (|VGS| = |VDS| = 1 V) and a room-temperature subthreshold swing (SS) of ~160 mV/dec over at least three orders of magnitude in current. Temperature-dependent measurements indicate that SS is limited by traps. We demonstrate improved TFET Ion performance by 1-2 orders of magnitude by scaling the equivalent oxide thickness from 2.7 to 1.5 nm. Furthermore, a novel benchmarking scheme is proposed to allow the comparison of different TFET data found in literature despite the different measurement conditions used.
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- 2015
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3. Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
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Sara Martí-Sánchez, Sebastian Heedt, Peter Krogstrup, Alexandra Fursina, Timm Swoboda, Leo P. Kouwenhoven, Francesco Borsoi, Pavel Aseev, Jordi Arbiol, Joachim E. Sestoft, Luca Binci, R. Koops, Guanzhong Wang, Emanuele Uccelli, Filip Krizek, Frenk Boekhout, Philippe Caroff, Universidad Autónoma de Barcelona, Microsoft Research, La Caixa, Generalitat de Catalunya, Ministerio de Economía y Competitividad (España), Aseev, Pavel [0000-0003-0343-9302], Arbiol, Jordi [0000-0002-0695-1726], Aseev, Pavel, and Arbiol, Jordi
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Letter ,Materials science ,Fabrication ,GaAs Molecular beam epitaxy ,Nanowire ,Bioengineering ,High Tech Systems & Materials ,02 engineering and technology ,Epitaxy ,III−V nanowire ,InAs ,molecular beam epitaxy ,General Materials Science ,Selectivity ,Quantum ,Quantum computer ,III?V nanowire ,Industrial Innovation ,business.industry ,Mechanical Engineering ,GaAs ,Selective-area growth ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Amorphous solid ,Nanoelectronics ,Optoelectronics ,III-V nanowire ,0210 nano-technology ,business ,Molecular beam epitaxy - Abstract
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III–V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III–V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III–V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov–Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance., The project was supported by Microsoft Station Q (Delft). S. Martí-Sanchez acknowledges funding from “Programa Internacional de Becas “la Caixa″-Severo Ochoa”. ICN2 members acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 acknowledges support from the Severo Ochoa Programme (MINECO, grant no. SEV-2013-0295) and is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autonoma de Barcelona Materials Science PhD program.
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- 2019
4. Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal
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N. Daix, Vladimir Djara, Jean Fompeyrine, Lukas Czornomaz, Marilyne Sousa, Emanuele Uccelli, Daniele Caimi, and Veeresh Deshpande
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010302 applied physics ,Materials science ,Wafer bonding ,business.industry ,Band gap ,Subthreshold conduction ,Doping ,Gate dielectric ,Transistor ,Electrical engineering ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,law.invention ,Threshold voltage ,Atomic layer deposition ,law ,0103 physical sciences ,Materials Chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Abstract
We present a tri-gate In0.53Ga0.47As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture. The fabricated devices feature a 20-nm-thick n-In0.53Ga0.47As channel doped to 1018/cm3 obtained by metal organic chemical vapor phase deposition and direct wafer bonding along with a 3.5-nm-thick Al2O3 gate dielectric deposited by plasma-enhanced atomic layer deposition (PE-ALD). The PE-ALD Al2O3 presents a bandgap of 7.0 eV, a k-value of 8.1 and a breakdown field of 8–10.5 MV/cm. A post-fabrication H2/Ar anneal applied to the PE-ALD Al2O3/In0.53Ga0.47As-OI gate stack yielded a low density of interface traps (Dit) of 7 × 1011/cm2 eV at Ec − E = −0.1 eV along with lower border trap density values than recently reported PE-ALD bi-layer Al2O3/HfO2 and thermal ALD HfO2 gate stacks deposited on In0.53Ga0.47As. The H2/Ar anneal also improved the subthreshold performance of the tri-gate InGaAs-OI JLFETs. After H2/Ar anneal, the long-channel (10 μm) device featured a threshold voltage (VT) of 0.25 V, a subthreshold swing (SS) of 88 mV/dec and a drain-induced barrier lowering (DIBL) of 65 mV/V, while the short-channel (160 nm) device exhibited a VT of 0.1 V, a SS of 127 mV/dec and a DIBL of 218 mV/V. Overall, the tri-gate InGaAs-OI JLFETs showed the best compromise in terms of VT, SS and DIBL compared to the other III–V JLFET architectures reported to date. However, a 15× increase in access resistance was observed after H2/Ar anneal, significantly degrading the maximum drain current of the tri-gate InGaAs-OI JLFETs.
- Published
- 2016
5. Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si(0 0 1)
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Marilyne Sousa, Youri Popoff, Daniele Caimi, Chiara Marchiori, Alexander A. Demkov, Lukas Czornomaz, Heinz Siegwart, Kristy J. Kormondy, Patrick Ponath, Stefan Abel, Florian Fallegger, Emanuele Uccelli, Jean Fompeyrine, and Agham Posadas
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Materials science ,business.industry ,Condensed Matter Physics ,Epitaxy ,Ferroelectricity ,Atomic and Molecular Physics, and Optics ,Pockels effect ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,Electron diffraction ,Barium titanate ,Optoelectronics ,Electrical and Electronic Engineering ,Thin film ,business ,Molecular beam ,Molecular beam epitaxy - Abstract
Display Omitted Highly crystalline BaTiO3 was integrated on Si using molecular beam epitaxy.Electro-optic response was evaluated for a-axis, c-axis, and mixed films.Increased a-axis fraction correlated with increased electro-optic response.Post-deposition oxygen anneal improved crystallinity and reduced leakage current. High-quality epitaxial BaTiO3 (BTO) on Si has emerged as a highly promising material for future electro-optic (EO) devices based on BTO's large effective Pockels coefficient. We report on the EO response of BTO films deposited on Si by molecular beam epitaxy (MBE), and characterize the structure of these films by reflection high-energy electron diffraction and X-ray diffraction. O2 rapid thermal anneal at 600?C for 30min ensures full oxidation of BTO for minimal leakage current with minimal change in crystalline structure.
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- 2015
6. Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
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Vladimir Djara, Nikola Dordevic, Marilyne Sousa, Chiara Marchiori, C. Rossel, Daniele Caimi, Veeresh Deshpande, Jean Fompeyrine, Lukas Czornomaz, and Emanuele Uccelli
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Materials science ,Passivation ,Band gap ,Analytical chemistry ,Conductance ,Dielectric ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,law.invention ,Atomic layer deposition ,Capacitor ,law ,Field-effect transistor ,Electrical and Electronic Engineering ,Dispersion (chemistry) - Abstract
Display Omitted First demonstration of high-k/In0.53Ga0.47As gate stack formed by PEALD.Optical and electrical characterization of Al2O3 and HfO2 materials formed by PEALD.Competitive Dit achieved with HF and with (NH4)2S surface preparations. We developed Al2O3 and HfO2 plasma-enhanced atomic layer deposition (PEALD) processes as part of the integration of a new high-k/In0.53Ga0.47As gate stack. The Al2O3 featured a bandgap of 7.0eV and a k-value of 8.1, while the HfO2 presented a bandgap of 6.2eV and a k-value of 14.6. W/HfO2/Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated and different In0.53Ga0.47As surface preparations HF or (NH4)2S] were tested. Both surface preparations revealed similar gate stack electrical performance. Capacitance-voltage (C-V) characteristics yielded very low frequency dispersion near accumulation (as low as 0.3% at Vg=1V). Low (
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- 2015
7. Field effect enhancement in buffered quantum nanowire networks
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Jordi Arbiol, Yu Liu, Tomaš Stankevič, Peter Krogstrup, Sara Martí-Sánchez, Emanuele Uccelli, Sabbir A. Khan, Saulius Vaitiekenas, Filip Krizek, Joachim E. Sestoft, Frenk Boekhout, Leo P. Kouwenhoven, Lucas Casparis, Alexander M. Whiticar, Pavel Aseev, Alexandra Fursina, Charles Marcus, R. Koops, European Research Council, European Commission, Danish National Research Foundation, Villum Fonden, La Caixa, Generalitat de Catalunya, and Ministerio de Economía y Competitividad (España)
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Quantum information applications ,General Physics ,Materials science ,Physics and Astronomy (miscellaneous) ,Nanowire ,Field effect ,FOS: Physical sciences ,High Tech Systems & Materials ,02 engineering and technology ,Epitaxy ,01 natural sciences ,Selective area growth ,Condensed Matter::Materials Science ,Field-effect mobilities ,Ballistic conduction ,Spin orbit interactions ,0103 physical sciences ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Nanotechnology ,General Materials Science ,Quantum information ,010306 general physics ,Quantum ,Condensed Matter - Materials Science ,Industrial Innovation ,Condensed Matter - Mesoscale and Nanoscale Physics ,business.industry ,Phase-coherence length ,Materials Science (cond-mat.mtrl-sci) ,Condensed Matter & Materials Physics ,Semiconductor nanowire ,021001 nanoscience & nanotechnology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Semiconductor ,Elastic strain relaxation ,Temperature dependence ,Optoelectronics ,Quantum Information ,Networks ,0210 nano-technology ,business ,Molecular beam epitaxy - Abstract
arXiv:1802.07808v2, III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers, where Sb is used as a surfactant. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase-coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications., The project was supported by Microsoft Station Q, the European Research Council (ERC) under the grant agreement No.716655 (HEMs-DAM), the European Union Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No 722176, the Danish National Science Research Foundation and the Villum Foundation. SMS acknowledges funding from >Programa Internacional de Becas >la Caixa>-Severo Ochoa>. JA and SMS also acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 acknowledges support from the Severo Ochoa Programme (MINECO, Grant no. SEV-2013-0295) and is funded by the CERCA Programme / Generalitat de Catalunya.
- Published
- 2018
8. Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates
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Heinz Schmid, Heike Riel, Mattias Borg, Davide Cutaia, Lynne Gignac, Kirsten E. Moselund, Emanuele Uccelli, Chris Breslin, and Siegfried Karg
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heterojunctions ,Materials science ,Nanowire ,Nanotechnology ,Equivalent oxide thickness ,low-power electronics ,Epitaxy ,tunnel diode ,tunnel transistor ,law.invention ,III-V semiconductor materials ,law ,Tunnel diode ,Electrical and Electronic Engineering ,Diode ,business.industry ,Transistor ,Heterojunction ,Orders of magnitude (numbers) ,Electronic, Optical and Magnetic Materials ,nanowires ,Optoelectronics ,lcsh:Electrical engineering. Electronics. Nuclear engineering ,business ,lcsh:TK1-9971 ,Biotechnology - Abstract
In this paper, we introduce ${p}$ -channel InAs-Si tunnel field-effect transistors (TFETs) fabricated using selective epitaxy in nanotube templates. We demonstrate the versatility of this approach, which enables III–V nanowire integration on Si substrates of any crystalline orientation. Electrical characterization of diodes and of TFETs fabricated using this method is presented; the TFETs exhibit a good overall performance with on-currents, ${I} _{\rm on}$ of 6 $\mu $ A/ $\mu $ m ( $|V_{GS}| = |V_{DS}| = 1$ V) and a room-temperature subthreshold swing ( SS ) of $\sim 160$ mV/dec over at least three orders of magnitude in current. Temperature-dependent measurements indicate that SS is limited by traps. We demonstrate improved TFET ${I} _{\rm on}$ performance by 1–2 orders of magnitude by scaling the equivalent oxide thickness from 2.7 to 1.5 nm. Furthermore, a novel benchmarking scheme is proposed to allow the comparison of different TFET data found in literature despite the different measurement conditions used.
- Published
- 2015
9. (Invited) Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 300mm
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Jean-Michel Hartmann, Vladimir Djara, N. Daix, Jean Fompeyrine, Lukas Czornomaz, C. Rossel, Emanuele Uccelli, Heinz Siegwart, Daniele Caimi, Marilyne Sousa, and Chiara Marchiori
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Engineering ,Fabrication ,CMOS ,business.industry ,Wafer bonding ,Electrical engineering ,Optoelectronics ,Insulator (electricity) ,business ,Electronic circuit - Abstract
1. Introduction As Si-CMOS scaling is becoming increasingly challenging, III-V compound semiconductors such as InxGa1-xAs (x≥0.53) (InGaAs) are receiving an increasing interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III-V heterostructures on a silicon substrate to enable production on large size wafers. III-V integration on Si by direct wafer bonding is considered as one of the possible paths towards this objective [3]. Our rationale is that (1) InGaAs-on-insulator can be fabricated with the appropriate critical dimensions and thermal stability, (2) source wafers can be fabricated on large diameter wafers with acceptable defect densities and (3) hybrid substrates can be used to fabricate simple CMOS circuits. 2. InGaAs-on-Insulator A possible fabrication path for InGaAs-On-Insulator substrate is summarized. For demonstration purposes, the source substrate can simply be etched. A manufacturable process will however rely on the H-induced thermal splitting, as demonstrated in [3]. For thin layers as required for advanced CMOS, the thickness of InGaAs-o-I is below the critical value determined by the thermal strain up to 600°C. In addition, the interface energy at the Al2O3-Si bonding interface is almost 1 J/m2, larger than the one determined for SiO2-Si bonding in SOI wafers [4]. Such structures can therefore undergo high temperature processes such as the regrowth of highly doped InGaAs source and drain. The thermal stability is illustrated by showing that the regrowth of InGaAs do not degrade the structural quality of the underlying ultra-thin InGaAs-o-I. Functional self-aligned devices have been processed down to short gate length Lg=24nm, demonstrating the stability of such structures [5]. 2. Large diameter source wafer For VLSI integration, the bonding flow must be available for large diameters. As no InP substrate is available above 4”, the only possibility is to grow a virtual donor wafer onto a large diameter silicon substrate. Low defect density as well as very low roughness is required. In our internal work, GaAs deposition is performed by MBE on 200mm Ge/Si (001) substrate 6° off-cut, and subsequent pseudomorphic InxAl1-xAs grading buffer (x~ 0-0.65) allows reaching InP lattice-matching conditions. The formation of a thin InGaAs active layer completes the heterostructure that is compatible with the direct wafer bonding process. The best rms/TDD values reported so far are for GaAs 1nm/low-107cm-2 , and for InGaAs 2nm/mid-108cm-2. , close to the best value reported so far for Aspect Ratio Trapping methods. Excellent device metrics have been obtained on such heterostructures, supporting the idea that they can be used as donor wafers. 3. Hybrid circuits Based on the previous results, the co-integration of fully depleted InGaAs and SiGe MOSFETs can be envisioned. Starting from an 8 nm thick ETSGOI wafer, a 6 nm thick InGaAs layer can be transferred as in [6]. Because of the low temperature used during wafer bonding, and due to the presence of the BOX, cross-diffusion between InGaAs and SiGe is inhibited. The n- and p- active regions are defined based on mesa definition in the InGaAs and SiGe layer. The rest of the process follows an ETSOI-like front-end where n- and p-FETs are processed simultaneously. Such an hybrid structure is shown, for which a simplified process has been utilized, including a common gate stack and metal source drain instead of raised source/drain. The device characteristics have been extensively reported in [6], and a typical inverter transfer characteristic has been obtained, leading to the first demonstration of hybrid CMOS circuits based on high mobility channels. [1] J. Lin, D. A. Antoniadis and J. A. Del Alamo, IEDM Tech. Dig. (2012) [2] M. Radosavljevic, G. Dewey, D. Basu, J. Boardman, B. Chu-Kung, J. M. Fastenau, S. Kabehie, J. Kavalieros, V. Le, W. K. Liu, D. Lubyshev, M. Metz, K. Millard, N. Mukherjee, L. Pan, R. Pillarisetty, W. Rachmady, U. Shah, H. W. Then and Robert Chau, IEDM Tech. Dig. (2011) [3] L. Czornomaz, N. Daix, D. Caimi, M, Sousa, R. Erni, M. D. Rossell, M. El-Kazzi, C. Rossel, C. Marchiori, E. Uccelli, M. Richter, H. Siegwart and J. Fompeyrine, IEDM Tech. Dig. (2012) [4] N. Daix, L. Czornomaz, D. Caimi, C. Rossel, M. Sousa and J. Fompeyrine, S3S conference 2013 [5] L. Czornomaz, et al., Proc. ESSDERC 2013 [6] L. Czornomaz, et al., IEDM Tech Digest (2013)
- Published
- 2014
10. (Invited) Physical and Electrical Properties of Scaled Gate Stacks on Si/Passivated In0.53Ga0.47As
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Debora Pierucci, Mathieu G. Silly, Chiara Marchiori, Stefan Abel, Fausto Sirotti, M. El Kazzi, Lukas Czornomaz, M. Sousa, J. Fompeyrine, and Emanuele Uccelli
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Materials science ,business.industry ,Transistor ,Electrical engineering ,Gate stack ,Capacitance ,Instability ,law.invention ,Capacitor ,Characterization methods ,Stack (abstract data type) ,law ,Limit (music) ,Optoelectronics ,business - Abstract
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the physical and chemical properties of the whole multilayered stack. Especially, critical instabilities which may potentially limit the achievement of sub-nanometer capacitance equivalent thickness and a low interface state density are described in detail. Finally we propose some alternative solutions to avoid the observed instability paths.
- Published
- 2013
11. Integration of GaAs on Ge/Si towers by MOVPE
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Emanuele Uccelli, Thomas Kreiliger, H. von Känel, Giovanni Isella, Antonia Neels, Elisabeth Müller, Philippe Niedermann, Jean Fompeyrine, Alex Dommann, M. Richter, Fabio Isa, Claudiu V. Falub, and Alfonso G. Taboada
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Crystallography ,Lattice constant ,Photoluminescence ,Materials science ,Plasma-enhanced chemical vapor deposition ,business.industry ,Phase (matter) ,Optoelectronics ,Substrate (electronics) ,Metalorganic vapour phase epitaxy ,Epitaxy ,business ,Thermal expansion - Abstract
We report on the maskless integration of micron-sized GaAs crystals on patterned Si substrates by metal organic vapor phase epitaxy. In order to adapt the mismatch between the lattice parameter and thermal expansion coefficient of GaAs and Si, 2 μm tall Ge crystals were first grown as virtual substrate by low energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs structures grown on top of the Ge crystals at the transition towards full pyramids with energetically stable {111} facets. A substantial release of strain is shown in GaAs crystals with a height of 2 μm and lateral sizes up to 15×15 μm2 by both X-ray diffraction and photoluminescence.
- Published
- 2013
12. Pressure Tuning of the Optical Properties of GaAs Nanowires
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C. Marini, Ilaria Zardo, Paolo Postorino, Anna Fontcuberta i Morral, Gerhard Abstreiter, Emanuele Uccelli, Sara Yazji, and Photonics and Semiconductor Nanophysics
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optical properties ,Silicon ,Phase transition ,Materials science ,Band gap ,Phonon ,Hydrostatic pressure ,resonant Raman ,Nanowire ,General Physics and Astronomy ,Scattering ,Condensed Matter::Materials Science ,symbols.namesake ,Lattice constant ,Spectrum ,General Materials Science ,Hydrostatic-Pressure ,Dependence ,Condensed matter physics ,business.industry ,General Engineering ,Gap ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,high pressure ,Semiconductor ,resonant raman ,raman spectroscopy ,nanowires ,Semiconductors ,Raman spectroscopy ,symbols ,Optoelectronics ,Diamond ,business ,Raman scattering - Abstract
The tuning of the optical and electronic properties of semiconductor nanowires can be achieved by crystal phase engineering. Zinc-blende and diamond semiconductors exhibit pressure-induced structural transitions as well as a strong pressure dependence of the band gaps. When reduced to nanoscale dimensions, new phenomena may appear. We demonstrate the tuning of the optical properties of GaAs nanowires and the induction of a phase transition by applying an external pressure. The dependence of the E-0 gap on the applied pressure was measured, and a direct-to-indirect transition was found. Resonant Raman scattering was obtained by pressure tuning of the E-0 and the E-0 + Delta(so) gaps with respect to the excitation energy. The resonances of the longitudinal optical modes L0 and 2L0 indicate the presence of electron-phonon Frohlich interactions. These measurements show for the first time a variation of ionicity in GaAs when in nanowire form. Furthermore, the dependence of the lattice constant on applied pressure was estimated. Finally, we found a clear indication of a structural transition above 16 GPa.
- Published
- 2012
13. Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy
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Martin Heiss, Anna Fontcuberta i Morral, Emanuele Uccelli, Bernt Ketterer, and Jordi Arbiol
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Materials science ,Zincblende ,Band gap ,Exciton ,resonant Raman ,General Physics and Astronomy ,Electronic structure ,Crystals ,Condensed Matter::Materials Science ,symbols.namesake ,Effective mass (solid-state physics) ,General Materials Science ,Electronic band structure ,Twinning Superlattices ,Wurtzite crystal structure ,Condensed matter physics ,Condensed Matter::Other ,Silicon Nanowires ,Optical-Properties ,General Engineering ,Light-Scattering ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Crystallography ,nanowires ,Semiconductors ,Inas ,electronic band structure ,symbols ,wurtzite GaAs ,Raman spectroscopy ,Raman scattering - Abstract
In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate that resonant Raman scattering is a important tool to probe the electronic structure of novel materials. Exemplarily, we use this technique to elucidate the band structure of wurtzite GaAs at the Gamma point. Within the experimental uncertainty we find that the free excitons at the edge of the wurtzite and the zinc-blende band gap exhibit equal energies. For the first time we show that the conduction band minimum in wurtzite GaAs is of Gamma(7) symmetry, meaning a small effective mass. We further find evidence for a light-hole-heavy-hole splitting of 103 meV at 10 K.
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- 2011
14. InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires
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Anna Fontcuberta i Morral, Emanuele Uccelli, Joan Ramon Morante, and Jordi Arbiol
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Quantum optics ,Materials science ,Photoluminescence ,stranski-krastanov ,Condensed Matter::Other ,business.industry ,Exciton ,General Engineering ,Nanowire ,Physics::Optics ,General Physics and Astronomy ,quantum dots ,Nanotechnology ,Heterojunction ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter::Materials Science ,nanowires ,Quantum dot ,Optoelectronics ,General Materials Science ,Spectroscopy ,business ,Molecular beam epitaxy - Abstract
InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the facets are capped with an ultrathin AlAs layer, as demonstrated by atomic force, high-resolution electron microscopy, and energy-dispersive X-ray spectroscopy line scans. The excitation of single and double excitons in the quantum dots are demonstrated by low-temperature photoluminescence spectroscopy realized on the single nanowires. This new type of heterostructures opens a new avenue to the fabrication of highly efficient single-photon sources, novel quantum optics experiments, as well as the realization of intermediate-band nanowire solar cells for third-generation photovoltaics.
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- 2010
15. P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires
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Bernt Ketterer, Marco Nicotra, Joseph Dufouleur, Carlo Colombo, Anna Fontcuberta i Morral, Emanuele Uccelli, and Tonko Garma
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Materials science ,Macromolecular Substances ,Surface Properties ,Molecular Conformation ,Nanowire ,chemistry.chemical_element ,Gallium ,Bioengineering ,Nanotechnology ,Arsenicals ,Catalysis ,Gallium arsenide ,chemistry.chemical_compound ,Electrical resistivity and conductivity ,Materials Testing ,General Materials Science ,nanowire ,doping mechanisms ,catalyst-free ,Raman spectroscopy ,electronic transport ,Particle Size ,Dopant ,business.industry ,Mechanical Engineering ,Doping ,Heterojunction ,General Chemistry ,Surface Plasmon Resonance ,Condensed Matter Physics ,Nanostructures ,Semiconductors ,chemistry ,Optoelectronics ,Crystallization ,business ,Molecular beam epitaxy - Abstract
Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incorporation from the side facets and from the gallium droplet. In the latter incorporation path, doping compensation seems to play an important role in the effective dopant concentration. Hole concentrations of at least 2.4 x 10(18) cm(-3) have been achieved, which to our knowledge is the largest p doping range obtained up to date. This work opens the avenue for the use of doped GaAs nanowires in advanced applications and in mesoscopic physics experiments.
- Published
- 2010
16. An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
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Veeresh Deshpande, C.-W. Weng, K.-T. Shiu, D. Lubyshev, Daniele Caimi, Lukas Czornomaz, J. M. Hartmann, N. Daix, Emanuele Uccelli, A. Liu, R. Steiner, Michael F. Lofaro, Jean Fompeyrine, Chiara Marchiori, D. K. Sadana, Mahadevaiyer Krishnan, Heinz Siegwart, C. Rossel, Marilyne Sousa, and Vladimir Djara
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Fabrication ,Materials science ,Silicon ,Wafer bonding ,business.industry ,chemistry.chemical_element ,Nanotechnology ,Substrate (electronics) ,chemistry.chemical_compound ,CMOS ,chemistry ,Logic gate ,Optoelectronics ,Wafer ,business ,Indium gallium arsenide - Abstract
We report on the first demonstration of ultra-thin body (50 nm), low defectivity 200 mm InGaAs-on-insulator (-OI) fabricated by direct wafer bonding technique (DWB) as well as a replacement gate process for self-aligned fully depleted InGaAs MOSFETs. These combined achievements highlight the viability of our approach for the VLSI integration of InGaAs at advanced nodes. Short channel replacement gate (RMG) and Gate-first (GF) FETs are reported for the first time using InGaAs-OI wafers with a 120nm contact-to-contact pitch. Record I ON (118 µA/µm) at fixed operating voltage of 0.5V for InGaAs devices on Si is achieved on 50-nm-Lg RMG FinFETs. Both schemes feature highly scaled fins (down to 15 nm). Compared to a GF integration flow, RMG devices exhibit better I on and DIBL characteristics. We also demonstrate FETs with 70 nm contacts and 120 nm pitch achieving high-I ON .
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- 2015
17. Electrical characterisation of InGaAs on insulator structures
- Author
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Paul K. Hurley, Alan Blake, Daniele Caimi, Brendan Sheehan, Emanuele Uccelli, Y. Y. Gomeniuk, J. O'Brien, Lukas Czornomaz, D. O'Connell, Karim Cherkaoui, N. Daix, Scott Monaghan, K. Thomas, and Emanuele Pelucchi
- Subjects
Materials science ,InGaAs ,Silicon ,business.industry ,chemistry.chemical_element ,Insulator (electricity) ,Physics based ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Buried oxide ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,law.invention ,Capacitor ,Semiconductor ,Interlayer dielectric ,chemistry ,law ,Simulated data ,Optoelectronics ,Wafer ,Electrical and Electronic Engineering ,business ,3D integration - Abstract
Display Omitted 50nm InGaAs on insulator layers successfully transferred using wafer bonding.We fabricated semiconductor/insulator/semiconductor capacitor structures.CV characteristics were measured and compared to simulated small ac signal CVs.This approach is suitable for the study of the insulator/InGaAs bottom interface. The electrical properties of Au/Ni/In0.53Ga0.47As/Al2O3/SiO2/Si structures were investigated using capacitance voltage (C-V) analysis. The properties of the InGaAs on insulator structures were analysed by comparing the measured and the theoretical C-Vs obtained using a physics based simulation of this structure. The results show that the measured data obtained on both n-type and p-type silicon match very well the simulated data. This work also shows that this approach allows the characterisation of charges in the buried oxide as well as interface states at the bottom InGaAs/Al2O3 interface.
- Published
- 2015
18. Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors
- Author
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Jean Fompeyrine, Vladimir Djara, Chiara Marchiori, Lukas Czornomaz, N. Daix, Emanuele Uccelli, Daniele Caimi, Veeresh Deshpande, and M. Sousa
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Materials science ,business.industry ,Wafer bonding ,Gate dielectric ,Transistor ,Doping ,Electrical engineering ,Equivalent oxide thickness ,law.invention ,Atomic layer deposition ,law ,Optoelectronics ,Field-effect transistor ,business ,AND gate - Abstract
A tri-gate In 0.53 Ga 0.47 As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture is demonstrated. The devices feature a 20-nm-thick n-In 0.53 Ga 0.47 As channel doped to 1018 /cm3 obtained by direct wafer bonding and a 3.5-nm-thick A1 2 O 3 gate dielectric deposited by plasma-enhanced atomic layer deposition (PE-ALD). The impact of the fin width (W fin ) and gate length (L g ) scaling at fixed channel doping (N d ) and equivalent oxide thickness (EOT) on the device performance is discussed and benchmarked.
- Published
- 2015
19. Fabrication and analysis of vertical p-type InAs-Si nanowire Tunnel FETs
- Author
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Emanuele Uccelli, Lynne Gignac, Heinz Schmid, Siegfried Karg, Davide Cutaia, Kirsten E. Moselund, Mattias Borg, Chris Breslin, Peter N. Nirmalraj, and Heike Riel
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Nanotube ,Materials science ,Fabrication ,business.industry ,Nanowire ,Optoelectronics ,Direct and indirect band gaps ,Nanotechnology ,Equivalent oxide thickness ,Dielectric ,business ,Metal gate ,Quantum tunnelling - Abstract
We report InAs-Si nanowire (NW) Tunnel FETs fabricated inside nanotube templates. High device yield and performances are obtained by optimizing the growth conditions and the fabrication flow using inorganic material as dielectric spacer, atomic-layer-deposition for the metal gate and by scaling the equivalent oxide thickness (EOT). We extract the exponential parameter B of Kane's tunneling model for direct bandgap (E g ) materials and compare it with experimental results. Moreover, studying the activation energy (E A ) for TFETs with different EOTs allows us to distinguish the different conduction mechanisms.
- Published
- 2015
20. III/V layer growth on Si and Ge surfaces for direct wafer bonding as a path for hybrid CMOS
- Author
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Emanuele Uccelli, Lukas Czornomaz, M. Sousa, N. Daix, Heinz Siegwart, Daniele Caimi, C. Rossel, Jean Fompeyrine, Chiara Marchiori, and J. M. Hartmann
- Subjects
Very-large-scale integration ,Materials science ,Silicon ,business.industry ,Wafer bonding ,chemistry.chemical_element ,Heterojunction ,Substrate (electronics) ,CMOS ,chemistry ,Electronic engineering ,Optoelectronics ,Wafer ,business ,Layer (electronics) - Abstract
As Si-CMOS scaling has become increasingly challenging, III-V compound semiconductors such as In x Ga 1-x As (x≥0.53) (InGaAs) are receiving much interest as channel material for nFET [1,2]. Together with SiGe as a pFET channel, they are considered as potential candidates to replace silicon for low power, high performance CMOS thanks to their better transport properties. A prerequisite in view of integration at VLSI scale is the formation of high quality III-V heterostructures on a silicon substrate to enable production on large size wafers.
- Published
- 2014
21. Co-integrating high mobility channels for future CMOS, from substrate to circuits
- Author
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Marilyne Sousa, N. Daix, Daniele Caimi, Emanuele Uccelli, Chiara Marchiori, C. Rossel, Heinz Siegwart, Lukas Czornomaz, and Jean Fompeyrine
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Materials science ,Fabrication ,business.industry ,Wafer bonding ,Transistor ,Electrical engineering ,Wafer backgrinding ,law.invention ,CMOS ,law ,Optoelectronics ,Wafer ,Field-effect transistor ,business ,Electronic circuit - Abstract
Direct wafer bonding can be a vehicle for the dense co-integration of co-planar nano-scaled SiGe p-FETs and InGaAs n-FETs. Like for SiGe, direct wafer bonding enable the fabrication of fully depleted transistors having superior electrostatic control over the channel. Hybrid substrates can be also fabricated by direct wafer bonding with stacked ultra-thin high-mobility layers. A process flow allows fabricating n- and p-channel field effect transistors with ultra-thin body and BOX on the same wafer. Working CMOS inverters are obtained using a common front-end.
- Published
- 2014
22. Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal-phase quantum disks in GaAs nanowires
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Richard T. Phillips, Barbara Van Hattem, Sonia Conesa-Boj, Anna Fontcuberta i Morral, Emanuele Uccelli, Pierre Lefebvre, Pierre Corfdir, Cavendish Laboratory, University of Cambridge [UK] (CAM), Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne (EPFL), Walter Schottky Institut (WSI), Technische Universität Munchen - Université Technique de Munich [Munich, Allemagne] (TUM), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and EPSRC (Grant Agreement EP/C009290/1) NCCR QSIT, the ERC Starting Grant UpCon and the Marie-Heim Vögtlin scheme
- Subjects
Materials science ,Photoluminescence ,Band gap ,Exciton ,Nanowire ,Bioengineering ,02 engineering and technology ,01 natural sciences ,magneto-optical properties ,envelope function calculations ,Condensed Matter::Materials Science ,0103 physical sciences ,General Materials Science ,010306 general physics ,Electronic band structure ,Wave function ,Wurtzite crystal structure ,Condensed matter physics ,Condensed Matter::Other ,Nanowires ,Mechanical Engineering ,General Chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Diamagnetism ,photoluminescence ,0210 nano-technology ,wurtzite GaAs - Abstract
International audience; Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the high surface-to-volume ratio of nanowires. There remains intense debate about the exact characteristics of the band structure of the novel crystal phases, such as wurtzite GaAs, obtained by this approach. We attack this problem via a low-temperature angle-dependent magneto-photoluminescence study of wurtzite/zinc-blende quantum disks in single GaAs nanowires. The exciton diamagnetic coefficient is proportional to the electron-hole correlation length, enabling a determination of the spatial extent of the exciton wave function in the plane and along the confinement axis of the crystal-phase quantum disks. Depending on the disk nature, the diamagnetic coefficient measured in Faraday geometry ranges between 25 and 75 μeV/T2. For a given disk, the diamagnetic coefficient remains constant upon rotation of the magnetic field. Along with our envelope function calculation accounting for excitonic effects, we demonstrate that the electron effective mass in wurtzite GaAs quantum disks is heavy, mostly isotropic and results from mixing of the two lower-energy conduction bands with Γ7 and Γ8 symmetries. Finally, we discuss the implications of the results of the angle dependent magneto-luminescence for the likely symmetry of the exciton states. This work provides important insight in the band structure of wurtzite GaAs for future nanowire-based polytypic bandgap engineering.
- Published
- 2013
23. Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires
- Author
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Pierre Corfdir, i Morral Anna Fontcuberta, Emanuele Uccelli, Sonia Conesa-Boj, A. M. Graham, Martin Heiss, Richard T. Phillips, Phillips, Richard [0000-0002-8279-3475], and Apollo - University of Cambridge Repository
- Subjects
Exciton ,Nanowire ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,Marie curie ,Condensed Matter::Materials Science ,0103 physical sciences ,media_common.cataloged_instance ,European union ,Astrophysics::Galaxy Astrophysics ,Wurtzite crystal structure ,media_common ,exciton ,010302 applied physics ,Physics ,Condensed matter physics ,Condensed Matter::Other ,GaAs ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,nanowires ,photoluminescence ,0210 nano-technology - Abstract
We investigate the emission properties of excitons in GaAs nanowires containing quantum disks formed by structural alternation between the zinc blende and wurtzite phases by means of temperature dependent photoluminescence. At 10 K the emission from an ensemble of disks is distributed in a band of full width at half maximum ~30 meV whereas the emission linewidth for a single disk is 700 µeV. While the disk ensemb e emission exhibits an S shaped temperature dependence the emission from single quantum disks follows the temperature dependence of the band gap over the whole temperature range. This indicates that intradisk exciton localization on impurities is negligible and that increasing the temperature induces a transfer of excitons from narrow to thick disks along the length of the wires. Our observations of the emission linewidth for single crystal phase quantum disks show a scattering rate of excitons with acoustic phonons eight times larger than the values usually reported for (AlGa)As/GaAs quantum wells. This large scattering rate demonstrates that the electron effective mass in wurtzite GaAs is much heavier than in zinc blende GaAs and is evidence of coupling between the Gamma_7 and Gamma_8 conduction bands of wurtzite GaAs.
- Published
- 2013
24. An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Author
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Emanuele Uccelli, Marilyne Sousa, N. Daix, Marta D. Rossell, Heinz Siegwart, Lukas Czornomaz, Rolf Erni, Daniele Caimi, Chiara Marchiori, Jean Fompeyrine, M. Richter, M. El-Kazzi, and C. Rossel
- Subjects
Materials science ,Silicon ,business.industry ,Wafer bonding ,Electrical engineering ,chemistry.chemical_element ,Heterojunction ,Insulator (electricity) ,chemistry ,MOSFET ,Thermal ,Optoelectronics ,Wafer ,Thermal stability ,business - Abstract
In this work we demonstrate for the first time that the excellent thermal stability of ultra-thin body (UTB) III-V heterostructures on silicon provides a path for the cointegration of self-aligned In 0.53 Ga 0.47 As MOSFETs with silicon. We first demonstrate that the transfer of high-quality InGaAs / InAlAs heterostructures (t ch < 10 nm) can be achieved by direct wafer bonding and hydrogen-induced thermal splitting, and that the donor wafer can be recycled for a cost-effective process. The thermal stability of the bonded layer enables to integrate UTB III-V MOSFETs at 500 nm pitch using a gate-first flow featuring raised source/drain (S/D) grown at 600oC. The expected benefit of an UTB structure is benchmarked by comparing sub-threshold slope (SS) and drain-induced-barrier-lowering (DIBL) against state-of-the-art III-V-o-I or Tri-Gate FET data.
- Published
- 2012
25. Gate-first implant-free InGaAs n-MOSFETs with sub-nm EOT and CMOS-compatible process suitable for VLSI
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M. Sousa, Lukas Czornomaz, C. Rossel, Daniele Caimi, Emanuele Uccelli, Jean Fompeyrine, Heinz Siegwart, Chiara Marchiori, M. Richter, and M. El Kazzi
- Subjects
Very-large-scale integration ,Materials science ,business.industry ,Electrostatic integrity ,Electrical engineering ,Process (computing) ,Gallium arsenide ,chemistry.chemical_compound ,chemistry ,CMOS ,MOSFET ,Hardware_INTEGRATEDCIRCUITS ,Optoelectronics ,business ,Scaling ,Cmos compatible - Abstract
We have demonstrated the first InGaAs MOSFETs with sub-nm EOT featuring a gate-first implant-free process compatible with VLSI. At L G = 65 nm, these devices are among the best reported ones in terms of electrostatic integrity but they suffer from a large access resistance related to a large gate-to-source/drain spacing. Future work will focus on scaling this spacing in the 5 nm range in order to achieve the desired on-performance.
- Published
- 2012
26. Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon
- Author
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Jordi Arbiol, César Magén, Lionel Michelet, Eleonora Russo-Averchi, Jesper Nygård, Emanuele Uccelli, Peter Krogstrup, Joan Ramon Morante, A. Fontcuberta i Morral, and Martin Heiss
- Subjects
Materials science ,Yield (engineering) ,Silicon ,business.industry ,Nanowire ,chemistry.chemical_element ,Nanotechnology ,Heterojunction ,Epitaxy ,chemistry ,Optoelectronics ,General Materials Science ,Vapor–liquid–solid method ,Crystal twinning ,business ,Molecular beam - Abstract
Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of vertical nanowires on silicon(111). These results open up the avenue towards the efficient integration of III–V nanowire arrays on the silicon platform.
- Published
- 2012
27. Supercooling of nanoscale Ga drops with controlled impurity levels
- Author
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Anna Fontcuberta i Morral, Emanuele Uccelli, Eli Sutter, and Peter Sutter
- Subjects
Phase transition ,Materials science ,Nanowire ,Nanotechnology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Transmission electron microscopy ,Chemical physics ,Impurity ,Phase (matter) ,X-ray crystallography ,Supercooling ,Nanoscopic scale - Abstract
We use in situ observations by variable temperature transmission electron microscopy on Ga drops at the tips of GaAs nanowires to investigate the phase behavior of nanoscale Ga. Experiments on pure Ga drops are compared with drops containing well-defined levels of impurities. Our controlled experiments show that the crystallization temperature, and hence the ultimate achievable supercooling, strongly depends on the concentration of impurities. All drops show predominant beta- and gamma-Ga correlations in the liquid phase and ultimately crystallize to solid beta- and gamma-Ga, which provides support for a scenario in which impurities limit the achievable supercooling without significantly templating the crystalline phase.
- Published
- 2011
28. Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates
- Author
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G. Mugny, Jordi Arbiol, François Morier-Genoud, Eleonora Russo-Averchi, César Magén, Jesper Nygård, Anna Fontcuberta i Morral, Peter Krogstrup, Martin Heiss, Emanuele Uccelli, and Joan Ramon Morante
- Subjects
Materials science ,Silicon ,business.industry ,Mechanical Engineering ,Nanowire ,chemistry.chemical_element ,Bioengineering ,Nanotechnology ,General Chemistry ,Crystal structure ,Condensed Matter Physics ,Polarization (waves) ,Epitaxy ,chemistry ,Optoelectronics ,Water splitting ,General Materials Science ,Vapor–liquid–solid method ,business ,Crystal twinning - Abstract
In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices.
- Published
- 2011
29. Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
- Author
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A. Fontcuberta i Morral, Ilaria Zardo, Jordi Arbiol, Gerhard Abstreiter, Joan Ramon Morante, Sonia Conesa-Boj, Francesca Peiró, and Emanuele Uccelli
- Subjects
Optical Phonons ,Semiconducting Nanowires ,Materials science ,III-V semiconductors ,Nanowire ,FOS: Physical sciences ,Dielectric ,polarisation ,Quantum-Dot ,Crystals ,Scattering ,symbols.namesake ,Electronic-Properties ,Optics ,crystal symmetry ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Indium-Phosphide Nanowires ,N-Gaas ,Wurtzite crystal structure ,Condensed Matter - Materials Science ,Condensed matter physics ,Condensed Matter - Mesoscale and Nanoscale Physics ,business.industry ,semiconductor quantum wires ,Materials Science (cond-mat.mtrl-sci) ,II-VI semiconductors ,Condensed Matter Physics ,Polarization (waves) ,gallium arsenide ,Electronic, Optical and Magnetic Materials ,nanowires ,Quantum dot ,Molecular-Beam Epitaxy ,surface roughness ,symbols ,lattice dynamics ,Raman spectra ,Raman spectroscopy ,business ,zinc compounds ,Raman scattering ,Structural Stability - Abstract
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm-1 of the E1(TO). The transversal optical mode related to the wurtzite structure, E2H, is measured between 254 and 256 cm-1, depending on the wurtzite content. The azymutal dependence of E2H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E1(TO) and E2H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on {110} facets is presented., Comment: 28 pages, 12 figures. to be published in Phys. Rev. B
- Published
- 2009
- Full Text
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30. Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
- Author
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Heinz Siegwart, Mahadevaiyer Krishnan, N. Daix, Chiara Marchiori, D. K. Sadana, Jean Fompeyrine, Cheng-Wei Cheng, Lukas Czornomaz, Daniele Caimi, Marilyne Sousa, M. Kobayashi, K.-T. Shiu, Emanuele Uccelli, M. Lofaro, J. M. Hartmann, and C. Rossel
- Subjects
Electron mobility ,Materials science ,Silicon ,Wafer bonding ,business.industry ,lcsh:Biotechnology ,General Engineering ,chemistry.chemical_element ,Substrate (electronics) ,lcsh:QC1-999 ,Active layer ,chemistry ,lcsh:TP248.13-248.65 ,MOSFET ,Optoelectronics ,General Materials Science ,Wafer ,business ,Layer (electronics) ,lcsh:Physics - Abstract
We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In0.53Ga0.47As (InGaAs) active layer is equal to 3.5 × 109 cm−2, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm2/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm2/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.
- Published
- 2014
31. Strain relaxation of GaAs/Ge crystals on patterned Si substrates
- Author
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Fabio Isa, Marco Salvalaglio, M. Richter, Benito Alén, Lukasz Jakub Wewior, Philippe Niedermann, Emanuele Uccelli, Alex Dommann, Thomas Kreiliger, Claudiu V. Falub, H. von Känel, Giovanni Isella, Antonia Neels, Fulvio Mancarella, Alfonso G. Taboada, Leo Miglio, David Fuster, Ministerio de Economía y Competitividad (España), Comunidad de Madrid, Taboada, A, Kreiliger, T, Falub, C, Isa, F, Salvalaglio, M, Wewior, L, Fuster, D, Richter, M, Uccelli, E, Niedermann, P, Neels, A, Mancarella, F, Alen, B, Miglio, L, Dommann, A, Isella, G, and von Kanel, H
- Subjects
Materials science ,Photoluminescence ,Physics and Astronomy (miscellaneous) ,business.industry ,Chemical vapor deposition ,Epitaxy ,Thermal expansion ,Condensed Matter::Materials Science ,Surface coating ,Crystallography ,Lattice constant ,GaAs Ge strain relaxation Si patterned substrates ,Plasma-enhanced chemical vapor deposition ,Optoelectronics ,Metalorganic vapour phase epitaxy ,business - Abstract
Taboada, A. G. et al., We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable {111} facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images. © 2014 AIP Publishing LLC., Financial support by the Swiss Federal Program Nano-Tera through projects NEXRAY and COSMICMOS and Spanish MINECO and CAM through projects EPIC-NANOTICS and Q&C Light are gratefully acknowledged.
- Published
- 2014
32. Nanoscale physics and defect state chemistry at amorphous-Si/In0.53Ga0.47As interfaces
- Author
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Emanuele Uccelli, Chiara Marchiori, Marilyne Sousa, Fausto Sirotti, Jean Fompeyrine, Mathieu G. Silly, M. El Kazzi, Lukas Czornomaz, Stefan Abel, and Debora Pierucci
- Subjects
Physics ,Thin layers ,Acoustics and Ultrasonics ,Surface photovoltage ,Fermi level ,Analytical chemistry ,Condensed Matter Physics ,Semimetal ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,symbols.namesake ,Band bending ,X-ray photoelectron spectroscopy ,symbols ,Thin film - Abstract
Interface and surface passivation of thin layers of III–V compound semiconductors is a key enabler of many technological applications spanning from nano-electronics to nano-photonics. The interaction between thin amorphous Si (a-Si) layers and clean, group-III-rich reconstructed In0.53Ga0.47As interfaces is studied by combining high-resolution synchrotron radiation x-ray photoelectron spectroscopy and time-dependent surface photovoltage (SPV) experiments. From 0.6 to 2.4 monolayers (ML) of a-Si are deposited on non-intentionally doped, p- and n-type In0.53Ga0.47As. For each deposition step, the observed surface and interface chemistry is directly correlated to the measured surface Fermi level position, band bending and SPV.Group-III-reconstructed In0.53Ga0.47As surfaces are observed to be intrinsically unstable against reaction with Si and two different instability regimes have been identified. First, for low deposition temperature, Si reacts strongly and intermixes with the In0.53Ga0.47As surface inducing In and Ga out-diffusion even at a sub-monolayer amount. For 2.4 ML of a-Si, a net positive interface charge of 1.24 × 1012 #/cm2 and a band of defects close to the conduction band are detected. For post-annealing at temperatures lower than 380 °C, the interface rearranges. At temperatures higher than 380 °C, out-diffusion of As in the a-Si is found to be the main instability driver.
- Published
- 2013
33. Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy
- Author
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Bernt Ketterer, Anna Fontcuberta i Morral, and Emanuele Uccelli
- Subjects
Silicon ,Plasmon Modes ,Materials science ,Nanowire ,Physics::Optics ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,Spectral line ,Light scattering ,Condensed Matter::Materials Science ,symbols.namesake ,Van der Pauw method ,0103 physical sciences ,Hole-Plasmon ,General Materials Science ,Doped Gaas ,Semiconductor Nanowires ,Longitudinal-Optical Phonons ,010302 applied physics ,business.industry ,Gap ,Light-Scattering ,Spectra ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,Transmission Raman spectroscopy ,Semiconductor ,chemistry ,Inas ,symbols ,Optoelectronics ,0210 nano-technology ,business ,Raman scattering - Abstract
The unambiguous measurement of carrier concentration and mobility in semiconductor nanowires remains a challenging task. This is a consequence of their one-dimensional nature and the incompatibility with Hall or van der Pauw measurements. We propose a method that allows the direct determination of mobility and carrier concentration in nanowires in a contact-less manner. We demonstrate how forward Raman scattering enables the measurement of phonon-plasmon interactions. By applying this method to p-type GaAs nanowires, we were able to directly obtain values of the carrier concentration between 3.0 × 10(17) and 7.4 × 10(18) cm(-3) and a mobility of 31 cm(2) (V s)(-1) at room temperature. This study opens the path towards the study of plasmon-phonon interactions in semiconductor nanowires.
- Published
- 2012
34. Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating
- Author
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Gregor Koblmüller, Gerhard Abstreiter, Stefan Funk, Anna Fontcuberta i Morral, Martin Soini, Emanuele Uccelli, and Ilaria Zardo
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Silicon Nanowires ,Thermoelectric-Materials ,Analytical chemistry ,Nanowire ,Physics::Optics ,Tapering ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Thermoelectric materials ,Gallium arsenide ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,symbols.namesake ,Thermal conductivity ,chemistry ,Thermal ,symbols ,Optoelectronics ,Laser power scaling ,business ,Raman spectroscopy - Abstract
The thermal properties of freely suspended GaAs nanowires are investigated by applying a method which relies on laser heating and the determination of the local temperature by Raman spectroscopy. In order to determine the values for the thermal conductivity kappa, the fraction of the laser power absorbed inside the GaAs nanowire is estimated by numerical simulations. The thermal conductivity of nanowires with homogeneous diameter is found to lie in the range of 8-36 W m(-1) K-1. The change of the temperature profile in the presence of a tapering was investigated. Furthermore, we discuss the influence of laser heating in ambient conditions on the value of kappa. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3532848]
- Published
- 2010
35. Compensation mechanism in silicon-doped gallium arsenide nanowires
- Author
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Bernt Ketterer, A. Fontcuberta i Morral, Emanuele Uccelli, and Evgeny Mikheev
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,Silicon ,business.industry ,Doping ,Nanowire ,Analytical chemistry ,chemistry.chemical_element ,Strained silicon ,Gallium arsenide ,chemistry.chemical_compound ,symbols.namesake ,Nanolithography ,chemistry ,symbols ,Optoelectronics ,business ,Raman spectroscopy ,Arsenic - Abstract
P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4×1018 cm−3, silicon incorporates mainly in arsenic sites. For higher concentrations, we observe the formation of silicon pairs. This is related to the Coulomb interaction between charged defects during growth. An electrical deactivation of more than 85% of the silicon acceptors is deduced for nominal silicon concentration of 4×1019 cm−3. This work is important to understand the limiting mechanisms of doping in compound semiconductor nanowires.
- Published
- 2010
36. Optical Properties of InAs Quantum Dot Array Ensembles with Predetermined Lateral Sizes from 20 to 40 nm
- Author
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Max Bichler, Anna Fontcuberta i Morral, Laura Waller, Emanuele Uccelli, and Gerhard Abstreiter
- Subjects
Materials science ,Photoluminescence ,Condensed Matter::Other ,business.industry ,General Engineering ,Physics::Optics ,General Physics and Astronomy ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter::Materials Science ,Selective area epitaxy ,Quantum dot ,Optoelectronics ,Emission spectrum ,business ,Luminescence ,Quantum information science ,Anisotropy ,Spectroscopy - Abstract
Cleaved edge overgrowth and selective area epitaxy were combined for the synthesis of InAs quantum dot (QD) arrays with lateral sizes from 20 to 40 nm. The optical properties were locally assessed by confocal photoluminescence spectroscopy experiments at liquid helium temperature. The emission lines redshift as the lateral size of the QDs is increased. In agreement with a narrow size distribution, significantly narrow emission lines are observed for measurements in QD ensembles. Excitation power dependent luminescence measurements were realized on QD ensembles. A shell filling behavior was observed. The same measurements realized on single QDs led to the observation of multiple excitonic effects. Polarization dependent luminescence measurements indicate the existence of in-plane optical anisotropy, which strictly follows in-plane morphological anisotropy of the QDs. These results are encouraging for the use of quantum dot arrays in quantum information science and technology, as well as for new device concepts.
- Published
- 2010
37. Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates.
- Author
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Emanuele Uccelli, Jordi Arbiol, Cesar Magen, Peter Krogstrup, Eleonora Russo-Averchi, Martin Heiss, Gabriel Mugny, François Morier-Genoud, Jesper NygaÌrd, Joan Ramon Morante, and Anna Fontcuberta i Morral
- Subjects
- *
TWINNING (Crystallography) , *AUTOCATALYSIS , *GALLIUM arsenide , *NANOWIRES , *SILICON , *MOLECULAR structure , *POLARIZATION (Electricity) , *CRYSTAL growth - Abstract
In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices. [ABSTRACT FROM AUTHOR]
- Published
- 2011
- Full Text
- View/download PDF
38. P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires.
- Author
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Joseph Dufouleur, Carlo Colombo, Tonko Garma, Bernt Ketterer, Emanuele Uccelli, Marco Nicotra, and Anna Fontcuberta i Morral
- Published
- 2010
- Full Text
- View/download PDF
39. In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires
- Author
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Bernt Ketterer, Anna Fontcuberta i Morral, Joan Ramon Morante, Emanuele Uccelli, Jordi Arbiol, and Martin Heiß
- Subjects
Optics and Photonics ,Materials science ,Luminescence ,Light ,Nanowire ,Analytical chemistry ,chemistry.chemical_element ,Bioengineering ,Electrons ,Gallium ,Growth ,Spectrum Analysis, Raman ,Indium ,Arsenicals ,Catalysis ,symbols.namesake ,Chemical-Vapor-Deposition ,Size ,Quantum Dots ,Devices ,Nanotechnology ,General Materials Science ,Electrical and Electronic Engineering ,Spectroscopy ,Semiconductor Nanowires ,Nanowires ,Mechanical Engineering ,Electron energy loss spectroscopy ,Temperature ,General Chemistry ,Phase Epitaxy ,chemistry ,Mechanics of Materials ,Quantum dot ,Inas ,symbols ,Gaas Nanowires ,Raman spectroscopy ,Molecular beam epitaxy - Abstract
Growth of GaAs and InxGa1-xAs nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO2 substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temperatures as low as 550 degrees C. The incorporation of indium was studied by low temperature micro-photoluminescence spectroscopy, Raman spectroscopy and electron energy loss spectroscopy. The results show that the incorporation of indium achieved by lowering the growth temperature does not have the effect of increasing the indium concentration in the bulk of the nanowire, which is limited to 3-5%. For growth temperatures below 575 degrees C, indium rich regions form at the surface of the nanowires as a consequence of the radial growth. This results in the formation of quantum dots, which exhibit spectrally narrow luminescence.
40. Tuning the response of non-allowed Raman modes in GaAs nanowires.
- Author
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Francesca Amaduzzi, Esther Alarcón-Lladó, Hubert Hautmann, Rawa Tanta, Federico Matteini, Gözde Tütüncüoǧlu, Tom Vosch, Jesper Nygård, Thomas Jespersen, Emanuele Uccelli, and Anna Fontcuberta i Morral
- Subjects
GALLIUM arsenide ,NANOWIRES ,FREQUENCY tuning ,PHOTONICS ,RESONANCE ,RAMAN spectroscopy - Abstract
We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting Raman scattered light with light polarized along the radial direction. Thanks to the photonic nature of the light–nanowire interaction, light polarization inside the nanowire is modified. This results in the excitation of LO modes, forbidden on {1 1 0} surfaces. We apply this new configuration to the measurement of carrier concentration on doped GaAs nanowires. These results open new perspectives for the study of the interaction of free-carriers or plasmons with optical phonons in nanostructures. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF
41. Controlled synthesis of InAs wires, dot and twin-dot array configurations by cleaved edge overgrowth.
- Author
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Emanuele Uccelli, Max Bichler, Simon N, Gerhard Abstreiter, Anna Fontcuberta, and i Morral
- Subjects
- *
OPTOELECTRONICS , *NANOSTRUCTURES , *QUANTUM electronics , *QUANTUM dots - Abstract
We present experimental results on the controlled synthesis of InAs ordered nanostructures with three different grades of complexity: nanowires, quantum dot arrays, and double quantum dot arrays. A model for the diffusion of In adatoms on (110) surfaces explains the observed ordering and establishes general criteria for the optimized fabrication of the three different InAs nanostructure configurations, as a function of the growth conditions. These results are important for the use of ordered InAs nanostructures in future optoelectronic applications. [ABSTRACT FROM AUTHOR]
- Published
- 2008
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