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An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Source :
- 2012 International Electron Devices Meeting.
- Publication Year :
- 2012
- Publisher :
- IEEE, 2012.
-
Abstract
- In this work we demonstrate for the first time that the excellent thermal stability of ultra-thin body (UTB) III-V heterostructures on silicon provides a path for the cointegration of self-aligned In 0.53 Ga 0.47 As MOSFETs with silicon. We first demonstrate that the transfer of high-quality InGaAs / InAlAs heterostructures (t ch < 10 nm) can be achieved by direct wafer bonding and hydrogen-induced thermal splitting, and that the donor wafer can be recycled for a cost-effective process. The thermal stability of the bonded layer enables to integrate UTB III-V MOSFETs at 500 nm pitch using a gate-first flow featuring raised source/drain (S/D) grown at 600oC. The expected benefit of an UTB structure is benchmarked by comparing sub-threshold slope (SS) and drain-induced-barrier-lowering (DIBL) against state-of-the-art III-V-o-I or Tri-Gate FET data.
Details
- Database :
- OpenAIRE
- Journal :
- 2012 International Electron Devices Meeting
- Accession number :
- edsair.doi...........9d8994bf9ec4626e06c8fba8f23d1758