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Electrical characterisation of InGaAs on insulator structures
- Publication Year :
- 2015
- Publisher :
- Elsevier B.V., 2015.
-
Abstract
- Display Omitted 50nm InGaAs on insulator layers successfully transferred using wafer bonding.We fabricated semiconductor/insulator/semiconductor capacitor structures.CV characteristics were measured and compared to simulated small ac signal CVs.This approach is suitable for the study of the insulator/InGaAs bottom interface. The electrical properties of Au/Ni/In0.53Ga0.47As/Al2O3/SiO2/Si structures were investigated using capacitance voltage (C-V) analysis. The properties of the InGaAs on insulator structures were analysed by comparing the measured and the theoretical C-Vs obtained using a physics based simulation of this structure. The results show that the measured data obtained on both n-type and p-type silicon match very well the simulated data. This work also shows that this approach allows the characterisation of charges in the buried oxide as well as interface states at the bottom InGaAs/Al2O3 interface.
- Subjects :
- Materials science
InGaAs
Silicon
business.industry
chemistry.chemical_element
Insulator (electricity)
Physics based
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Buried oxide
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Capacitor
Semiconductor
Interlayer dielectric
chemistry
law
Simulated data
Optoelectronics
Wafer
Electrical and Electronic Engineering
business
3D integration
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....689729c2fd0022a3f2d8e574b10575f5