Back to Search
Start Over
Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates
- Source :
- Nano letters. 11(9)
- Publication Year :
- 2011
-
Abstract
- In this paper we introduce a new paradigm for nanowire growth that explains the unwanted appearance of parasitic nonvertical nanowires. With a crystal structure polarization analysis of the initial stages of GaAs nanowire growth on Si substrates, we demonstrate that secondary seeds form due to a three-dimensional twinning phenomenon. We derive the geometrical rules that underlie the multiple growth directions observed experimentally. These rules help optimizing nanowire array devices such as solar or water splitting cells or of more complex hierarchical branched nanowire devices.
- Subjects :
- Materials science
Silicon
business.industry
Mechanical Engineering
Nanowire
chemistry.chemical_element
Bioengineering
Nanotechnology
General Chemistry
Crystal structure
Condensed Matter Physics
Polarization (waves)
Epitaxy
chemistry
Optoelectronics
Water splitting
General Materials Science
Vapor–liquid–solid method
business
Crystal twinning
Subjects
Details
- ISSN :
- 15306992
- Volume :
- 11
- Issue :
- 9
- Database :
- OpenAIRE
- Journal :
- Nano letters
- Accession number :
- edsair.doi.dedup.....ded05b2733a7b3474f5e365691e5b258