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The structural features of the silicon surface–Saccharomyces cerevisiae yeast suspended in ethanol system, which emerge in weak magnetic fields, are considered in this paper. It is assumed that these features arise from the electrostatic interaction between the negatively charged cell surface and positively charged metal ions emerging on the silicon surface after magnetic activation. The effect of magnetic treatment on the distribution of ethanol microdroplets on the silicon surface is studied separately.

The evolution of a Saccharomyces cerevisiae suspension deposited onto the surface of silicon is investigated. Evolution of the yeast is caused by the effect of a weak stationary magnetic field (B = 0.17 T) and low-energy (E = 8 keV) low-dose (D = 104 Gy) X-ray radiation. It is found that the magnetic and X-ray treatment of the yeast suspension leads to ordering of the cell structures. It is suggested that one reason for this ordering is the presence of electric charges in the cells and on the surface of the silicon crystals exposed to magnetic and X-ray treatment.

We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy (E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay and the charge state of the surface, determined by measuring the surface distribution of the amplitude and decay time of the photovoltage, is found.

Features of changes in the microhardness of nand p-type Si crystals exposed to low-energy X-ray radiation (E = 8 keV) at low doses (D = 1.8 × 103 to 3 × 104 Gy) are studied. The changes are classified as a radiation–mechanical effect and depend on a number of factors, e.g., layer occurrence depth, siliconcrystal conductivity type, and charge-carrier concentration. The revealed difference in the radiation–mechanical effects in nand p-type Si crystals is attributed to the specific features of radiation-stimulated interdefect transformations in the studied crystals.

The influence of migration barriers on the mobility of short surface dislocations (length L of ≤100 μm) in Si crystals is analyzed in this paper. The dependence of the migration barrier on the diffusion coefficient of impurities that are dominant in Si after surface metallization is established.

The effect of soft X-rays with photon energy W = 8 keV on the kinetics of decay photovoltage in solar silicon crystals is studied. The correlation between the radiation-stimulated change in the electrical characteristics of the investigated crystals and the evolution of their charge, structural state, and surface morphology is established. Also studied are the changes in the photovoltage decay kinetics caused by the action of X-rays on the solar Si – nanofilled polymer coating structures. It is shown that X-ray irradiation leads to quite big recombination losses in the case that the epoxy-urethane matrix contains a filler (polysiloxane particles (PSPs)) in the amount of 0.001 and 1.0 wt. %. At the same time, at PSP filler content of 0.5 wt. %, the passivation epoxy-urethane coatings exhibit an increased radiation resistance.

The influence of impurity atmospheres on the mobility and shape of short surface dislocations (with a length of L ≤ 100 μm) in Si crystals is considered in this paper. The difference between the evolution of impurity atmospheres in the vicinity of surface dislocations in the initial Si crystals and in Si crystals with surfaces metallized with Cu is analyzed.

The possibility of magnetic ordering at dangling bonds in dislocation cores has been investigated theoretically. It has been experimentally shown that magnetic ordering in dislocations affects the spin-dependent effects occurring in dislocation crystals of silicon. It has been found that preliminary magnetic treatment of silicon crystals in a weak magnetic field leads to the suppression of the electroplastic effect induced in silicon crystals excited by an electric current. It has been assumed that a change in the microplasticity under the combined action of a magnetic field and an electric current is caused by a weakening of spin-dependent recombination at dislocation dangling bonds.

The effect of a weak permanent magnetic field on the structure and charge state of silicon for solar-power engineering is investigated. It is revealed that magnetostimulated changes in the defect-impurity state and surface potential have a reversible character.

The effect of low-energy (W = 8 keV) low-dose ((0.3–7.3) × 102 Gy) radiation and a dc magnetic field (B = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which manifest themselves upon only X-ray exposure and combined (X-ray and magnetic) exposure, have been revealed.