Features of changes in the microhardness of silicon crystals exposed to low-energy X-ray radiation

Features of changes in the microhardness of nand p-type Si crystals exposed to low-energy X-ray radiation (E = 8 keV) at low doses (D = 1.8 × 103 to 3 × 104 Gy) are studied. The changes are classified as a radiation–mechanical effect and depend on a number of factors, e.g., layer occurrence depth, siliconcrystal conductivity type, and charge-carrier concentration. The revealed difference in the radiation–mechanical effects in nand p-type Si crystals is attributed to the specific features of radiation-stimulated interdefect transformations in the studied crystals.