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Effect of low-energy X-ray radiation on the electrophysical properties of silicon crystals of n- and p-type conductivity
- Source :
- Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:672-675
- Publication Year :
- 2016
- Publisher :
- Pleiades Publishing Ltd, 2016.
-
Abstract
- We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy (E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay and the charge state of the surface, determined by measuring the surface distribution of the amplitude and decay time of the photovoltage, is found.
- Subjects :
- 010302 applied physics
Materials science
Silicon
business.industry
Surface photovoltage
X-ray
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
Radiation
Conductivity
021001 nanoscience & nanotechnology
01 natural sciences
Surfaces, Coatings and Films
Monocrystalline silicon
Amplitude
chemistry
0103 physical sciences
Optoelectronics
Thin film
0210 nano-technology
business
Subjects
Details
- ISSN :
- 18197094 and 10274510
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
- Accession number :
- edsair.doi...........31f25b1fb284b4861edb8fb8bf3fd214