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Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field

Authors :
L. P. Steblenko
S. N. Naumenko
Yu. L. Kobzar
A. N. Krit
A. B. Nadtochiy
D. V. Kalinichenko
V. A. Makara
O. A. Korotchenkov
A. N. Kuryliuk
Source :
Semiconductors. 48:722-726
Publication Year :
2014
Publisher :
Pleiades Publishing Ltd, 2014.

Abstract

The effect of a weak permanent magnetic field on the structure and charge state of silicon for solar-power engineering is investigated. It is revealed that magnetostimulated changes in the defect-impurity state and surface potential have a reversible character.

Details

ISSN :
10906479 and 10637826
Volume :
48
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........2519fa060db824317d7c2b1a5631b022