144 results on '"Joseph, A.J."'
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52. SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics.
53. Analysis of Factors Contributing to Common-Base Avalanche Instabilities in Advanced SiGe HBTs.
54. SiGe BiCMOS Trends - Today and Tomorrow.
55. Reliability issues associated with operating voltage constraints in advanced SiGe HBTs.
56. Impact of proton irradiation on the RF performance of 0.12 /μm CMOS technology.
57. A 24 GHz broadband SiGe HBT limiting amplifier.
58. The impact of low-frequency noise variations on the modeling and operation of SiGe circuits.
59. A 7-bit, 18 GHz SiGe HBT comparator for medium resolution A/D conversion.
60. Assessing reliability issues in cryogenically-operated SiGe HBTs.
61. The impact of substrate bias on proton damage in 130 nm CMOS technology.
62. On the suitability of SiGe HBTs for high-temperature (to 300°) electronics.
63. Hot-carrier stress induced low-frequency noise degradation in 0.13 μm and 0.18 μm RF CMOS technologies.
64. Accurate AC transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique.
65. Design of a monolithic 30 GHz branch line coupler in SiGe HBT technology using 3D EM simulation.
66. Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology.
67. An 8.4-12.0 GHz down-conversion mixer implemented in SiGe HBT technology.
68. SiGe BiCMOS technologies - addressing the communication market needs.
69. Impact of collector-base junction traps and high injection barrier effect on 1/f noise.
70. Transistor noise in SiGe HBT RF technology
71. Current status and future trends of SiGe BiCMOS technology
72. Low-frequency noise figures-of-merit in RF SiGe HBT technology.
73. Low-frequency noise variation in scaled SiGe HBTs.
74. A new "mixed-mode" base current degradation mechanism in bipolar transistors.
75. Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs.
76. Volterra series simulations of RF intermodulation characteristics of SiGe HBT's.
77. The effects of geometrical scaling on the RF performance of SiGe HBTs.
78. Noise parameter modeling and SiGe profile design tradeoffs for RF applications.
79. Transistor noise in SiGe HBT RF technology.
80. The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology
81. Regions of cell division and elongation during stem growth of Xanthium
82. Optimization of SiGe HBTs for operation at high current densities
83. Quantifying neutral base recombination and the effects of collector-base junction traps in UHV/CVD SiGe HBTs
84. Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors
85. Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's
86. Evidence for non-equilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures
87. Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime
88. SiGe profile design tradeoffs for RF circuit applications.
89. Impact of profile scaling on high-injection barrier effects in advanced UHV/CVD SiGe HBTs.
90. 1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology.
91. The effects of reverse-bias emitter-base stress on the cryogenic operation of advanced UHV/CVD Si- and SiGe-base bipolar transistors.
92. Neutral base recombination in advanced SiGe HBTs and its impact on the temperature characteristics of precision analog circuits.
93. Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors.
94. Evidence for nonequilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures.
95. Topical ‘Sydney’ Propolis Protects against UV-Radiation-Induced Inflammation, Lipid Peroxidation and Immune Suppression in Mouse Skin.
96. Long-term thermograph records from the upper Florida Keys; comparisons between sites
97. Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs.
98. Reliability of high-speed SiGe heterojunction bipolar transistors under very high forward current density.
99. Phase identity of the maize leaf is determined after leaf initiation.
100. Geometry-dependent low-frequency noise variations in 120 GHz fT SiGe HBTs.
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