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The structural features of the silicon surface–Saccharomyces cerevisiae yeast suspended in ethanol system, which emerge in weak magnetic fields, are considered in this paper. It is assumed that these features arise from the electrostatic interaction between the negatively charged cell surface and positively charged metal ions emerging on the silicon surface after magnetic activation. The effect of magnetic treatment on the distribution of ethanol microdroplets on the silicon surface is studied separately.

The evolution of a Saccharomyces cerevisiae suspension deposited onto the surface of silicon is investigated. Evolution of the yeast is caused by the effect of a weak stationary magnetic field (B = 0.17 T) and low-energy (E = 8 keV) low-dose (D = 104 Gy) X-ray radiation. It is found that the magnetic and X-ray treatment of the yeast suspension leads to ordering of the cell structures. It is suggested that one reason for this ordering is the presence of electric charges in the cells and on the surface of the silicon crystals exposed to magnetic and X-ray treatment.

We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy (E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay and the charge state of the surface, determined by measuring the surface distribution of the amplitude and decay time of the photovoltage, is found.

Features of changes in the microhardness of nand p-type Si crystals exposed to low-energy X-ray radiation (E = 8 keV) at low doses (D = 1.8 × 103 to 3 × 104 Gy) are studied. The changes are classified as a radiation–mechanical effect and depend on a number of factors, e.g., layer occurrence depth, siliconcrystal conductivity type, and charge-carrier concentration. The revealed difference in the radiation–mechanical effects in nand p-type Si crystals is attributed to the specific features of radiation-stimulated interdefect transformations in the studied crystals.

The crack resistance of silicon samples with copper coatings has been studied at room temperature. It has been shown that the deposition of copper coatings on the silicon surface is accompanied by an increase in the crack resistance factor and the formation of regions with dislocations in external load zones, which indicates plastic deformation in the brittle fracture zone.

The possibility of magnetic ordering at dangling bonds in dislocation cores has been investigated theoretically. It has been experimentally shown that magnetic ordering in dislocations affects the spin-dependent effects occurring in dislocation crystals of silicon. It has been found that preliminary magnetic treatment of silicon crystals in a weak magnetic field leads to the suppression of the electroplastic effect induced in silicon crystals excited by an electric current. It has been assumed that a change in the microplasticity under the combined action of a magnetic field and an electric current is caused by a weakening of spin-dependent recombination at dislocation dangling bonds.

The effect of a weak permanent magnetic field on the structure and charge state of silicon for solar-power engineering is investigated. It is revealed that magnetostimulated changes in the defect-impurity state and surface potential have a reversible character.

The effect of low-energy (W = 8 keV) low-dose ((0.3–7.3) × 102 Gy) radiation and a dc magnetic field (B = 0.17 T) on structural, micromechanical, and microplastic characteristics of silicon crystals has been studied. The features in the dynamic behavior of dislocations in silicon crystals, which manifest themselves upon only X-ray exposure and combined (X-ray and magnetic) exposure, have been revealed.