47 results on '"Ohashi, N"'
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2. Compositional characterization of nano-materials and thin films with secondary ion massspectrometry
3. Diffusion Properties of Point Defects in Barium Strontium Titanate Thin Films
4. Capacitance reduction effect using capping-layer removal process for porous low-k (k=2.5)/Cu system toward 45nm technology node
5. Integration of manufacturable 65nm-node HfSiON transistors optimized with low-thermal-budget CMOS process.
6. Improved Cu CMP process for 0.13 /spl mu/m node multilevel metallization
7. A novel copper interconnection technology using self aligned metal capping method
8. TDDB improvement in Cu metallization under bias stress.
9. Dielectric property of BaTiO/sub 3/-SrTiO/sub 3/ artificially modulated structure made by MBE.
10. Low temperature metal-based cell integration technology for gigabit and embedded DRAMs.
11. A 0.2-/spl mu/m bipolar-CMOS technology on bonded SOI with copper metallization for ultra high-speed processors.
12. Design criteria for high frequency, ultra high di/dt MAGTs.
13. Real-time software development system RT/sub IPLUS/.
14. Direct CMP on Porous Low-k Film for Damage-less Cu Integration.
15. Characterization of patterned low-k film delamination during CMP for the 32nm node Cu/ultra low-k (k=1.6-1.8) integration.
16. Enhancement in electrical via-yield of porous low-k/Cu integration by reducing CMP pressure.
17. TDDB degradation analysis using Ea of leakage current for reliable porous CVD SiOC(k=2.45)/Cu interconnects.
18. PECVD low-k SiOC (k=2.8) as a cap layer for 200nm pitch Cu interconnect using porous low-k dielectrics (k=2.3).
19. Suppression of Cu extrusion into porous-MSQ film during chip-reliability test.
20. Low damage ashing using H2/He plasma for porous ultra low-k.
21. Low-pressure CMP for reliable porous low-k/Cu integration.
22. Improved Cu abrasive-free polishing at 0.13 μm manufacturing and beyond.
23. Development of a substation digital protection and control system using fiber-optic local area network.
24. A 7 level metallization with Cu damascene process using newly developed abrasive free polishing.
25. Complete-abrasive-free process for copper damascene interconnection.
26. Impact of low pressure long throw sputtering method on submicron copper metallization.
27. Liquid phase epitaxial growth of perovskite (Bi,Na)TiO/sub 3/ and solid solutions on SrTiO/sub 3/ [001] substrates
28. Elongated lattice relaxation on a ZnO(0001) surface
29. Low damage ashing using H/sub 2//He plasma for porous ultra low-k
30. Robust porous MSQ (k=2.3, e=12 GPa) for low-temperature (>350°C) Cu/low-k integration using ArF resist mask process
31. Low temperature metal-based cell integration technology for gigabit and embedded DRAMs
32. Impact of low-k dielectrics and barrier metals on TDDB lifetime of Cu interconnects
33. Low-pressure CMP for 300-mm ultra low-k (k=1.6-1.8)/Cu integration
34. Low-pressure CMP for reliable porous low-k/Cu integration
35. TDDB improvement in Cu metallization under bias stress
36. Impact of low pressure long throw sputtering method on submicron copper metallization
37. Complete-abrasive-free process for copper damascene interconnection
38. A 7 level metallization with Cu damascene process using newly developed abrasive free polishing
39. Dielectric property of BaTiO/sub 3/-SrTiO/sub 3/ artificially modulated structure made by MBE
40. Improved Cu abrasive-free polishing at 0.13 μm manufacturing and beyond
41. A 0.2-μm bipolar-CMOS technology on bonded SOI with copper metallization for ultra high-speed processors
42. Damage-free CMP towards 32nm-node porous low-k (k = 1.6)/Cu integration.
43. Impacts of high modulus ultra low-k/Cu 300 mm-wafer integration for 65 nm technology node and beyond.
44. Development of a Substation Digital Protection and Control System Using a Fiber-Optic Local Area Network.
45. Liquid phase epitaxial growth of perovskite (Bi,Na)TiO3 and solid solutions on SrTiO3 (001) substrates.
46. Elongated lattice relaxation on a ZnO(0001) surface.
47. A synthesis algorithm for pipelined data paths with conditional module sharing.
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