1. Growth of Mg2Si thermoelectric eutectics by unidirectional solidification.
- Author
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Hayashi, Naomoto, Yokota, Yuui, Horiai, Takahiko, Yoshino, Masao, Yamaji, Akihiro, Murakami, Rikito, Hanada, Takashi, Sato, Hiroki, Ohashi, Yuji, Kurosawa, Shunsuke, Kamada, Kei, and Yoshikawa, Akira
- Subjects
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EUTECTIC structure , *SOLIDIFICATION , *SEEBECK coefficient , *PHONON scattering , *THERMAL conductivity , *EUTECTICS - Abstract
• Mg 2 Si/Si eutectics of 1 in. in diameter were solidified by the VB method at three pulling rates. • The Mg 2 Si/Si eutectics indicated a phase-separated eutectic structure of the Mg 2 Si and Si phases. • The eutectic morphology became finer with an increase in the pulling rate. • The thermal conductivity systematically decreased with an increase in the pulling rate. • The power factor was improved in the temperature ranges above 400 °C compared to the Mg 2 Si. • The ZT value reached 0.076 at 600 °C for the Mg 2 Si/Si solidified at a 103 pulling rate. Mg 2 Si/Si eutectics are grown from melt by the Vertical Bridgman method using a carbon crucible at three pulling rates. All the Mg 2 Si/Si eutectics are composed of Mg 2 Si and Si phases, and the eutectic structure becomes finer with an increase in the pulling rate. Increasing the pulling rate systematically decreases the thermal conductivities of the Mg 2 Si/Si eutectics, suggesting that a decrease in the thermal conductivity is attributed to an increase in phonon scattering at the boundaries between the two phases. The power factor and figure of merit of the Mg 2 Si/Si eutectics are larger than those of Mg 2 Si above 400 °C because of the increase in the Seebeck coefficient. The figure of merit, ZT , of the Mg 2 Si/Si eutectics solidified at a 103 mm/min pulling rate reached 0.076 at 600 °C. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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