Crystal growth and optical properties of Ce-doped (La,Y)2Si2O7 single crystal.

• (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 single crystal was grown by the micro-pulling-down method. • Quenching temperature of (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 was determined to be 526 K. • Light output of (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 was determined to be ~12,000 photons/MeV. We have grown Ce-doped (La,Y) 2 Si 2 O 7 single crystal by micro-pulling-down method and investigated its optical and scintillation properties. We have successfully prepared the single crystal with (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 composition. The observed thermal quenching process could be characterized by the quenching temperature (T 50%) of 526 K and its activation energy was determined to be 0.62 eV. Further considering the thermal quenching factors, it was found that the thermal quenching was caused by at least the thermal ionization and maybe also by classical thermal quenching. The light output and scintillation decay time were evaluated to be ~12,000 photons/MeV and ~42 ns, respectively. These results indicate that (Ce 0.015 La 0.600 Y 0.385) 2 Si 2 O 7 has a great potential for application in scintillation materials. [ABSTRACT FROM AUTHOR]