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70 results on '"Clement Merckling"'

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1. Evidence for intrinsic magnetic scatterers in the topological semimetal (Bi2)5(Bi2Se3)7

4. Overview of scalable transfer approaches to enable epitaxial 2D material integration

5. Integration of Li

6. Differential evolution optimization of Rutherford backscattering spectra

7. Observation of the radiative decay of the ${}^{229}\mathrm{Th}$ nuclear clock isomer

9. Effective Contact Resistivity Reduction for Mo/Pd/n-In0.53Ga0.47 as Contact

10. (Invited) Integrated Perovskites Oxides on Silicon: From Optical to Quantum Applications

11. Lifetime Assessment of In x Ga 1− x As n‐Type Hetero‐Epitaxial Layers

12. Role of Stronger Interlayer van der Waals Coupling in Twin-Free Molecular Beam Epitaxy of 2D Chalcogenides

13. On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides

14. Polarization control of epitaxial barium titanate (BaTiO 3 ) grown by pulsed-laser deposition on a MBE-SrTiO 3 /Si(001) pseudo-substrate

15. Peculiar alignment and strain of 2D WSe

16. Thermodynamic modelling of InAs/InP(001) growth towards quantum dots formation by metalorganic vapor phase epitaxy

17. Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission

18. Room Temperature O-band DFB Laser Array Directly Grown on (001) Silicon

19. Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy

20. Erratum: Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers [ ECS J. Solid State Sci. Technol., 9, 033001 (2020)]

21. Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n plus InAs/p plus GaSb nanowire tunneling devices

22. Replacement fin processing for III–V on Si: From FinFets to nanowires

23. Review—Device Assessment of Electrically Active Defects in High-Mobility Materials

24. (Invited) On the Electrical Activity of Extended Defects in High-Mobility Channel Materials

25. Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions

26. Quantitative Method to Determine Planar Defect Frequency in InAs Nanowires by High Resolution X-ray Diffraction

27. (Invited) Monolithic Integration of III-V Semiconductors by Selective Area Growth on Si(001) Substrate: Epitaxy Challenges & Applications

28. Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface

29. Contributors

30. Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices

31. Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode

32. Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy

33. 3D technologies for analog/RF applications

34. New materials for modulators and switches in silicon photonics (Conference Presentation)

35. Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers

36. Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2

37. InAlGaAs encapsulation of MOVPE-grown InAs quantum dots on InP(0 0 1) substrate

38. The impact of extended defects on the generation and recombination lifetime in n type In.53Ga.47As

39. Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces

40. (Invited) Electrical Activity of Extended Defects in III-V Semiconductors

41. Observation of the Stacking Faults in In 0.53 Ga 0.47 As by Electron Channeling Contrast Imaging

42. Editorial

43. Epitaxial growth and strain relaxation studies of BaTiO3 and BaTiO3/SrTiO3 superlattices grown by MBE on SrTiO3-buffered Si(001) substrate

44. Orientation-dependent electro-optical response of BaTiO_3 on SrTiO_3-buffered Si(001) studied via spectroscopic ellipsometry

45. Novel Light Source Integration Approaches for Silicon Photonics

46. Heterostructure at CMOS source/drain: Contributor or alleviator to the high access resistance problem?

47. Vertical devices for future nano-electronic applications

48. III-Y on silicon DFB laser arrays

49. Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

50. Heterogeneous Integration of InP Devices on Silicon

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