Back to Search Start Over

Erratum: Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers [ ECS J. Solid State Sci. Technol., 9, 033001 (2020)]

Authors :
Han Han
Geert Eneman
P. Carolan
F. Seidel
Po-Chun Hsu
M.M. Heyns
Clement Merckling
Niamh Waldron
Nadine Collaert
Alireza Alian
Hugo Bender
Cor Claeys
Yves Mols
Eddy Simoen
Source :
ECS Journal of Solid State Science and Technology. 9:039002
Publication Year :
2020
Publisher :
The Electrochemical Society, 2020.

Details

ISSN :
21628777
Volume :
9
Database :
OpenAIRE
Journal :
ECS Journal of Solid State Science and Technology
Accession number :
edsair.doi...........36d48aa665e18cfb5218a969f031d867
Full Text :
https://doi.org/10.1149/2162-8777/ab790c