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Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2
- Source :
- 2D Materials. 7:025027
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- ispartof: 2D MATERIALS vol:7 issue:2 status: published
- Subjects :
- DYNAMICS
Technology
DOMAINS
Materials science
Materials Science
Binding energy
Nucleation
Materials Science, Multidisciplinary
Crystal structure
EPITAXY
Epitaxy
GRAIN-BOUNDARIES
Molecular physics
symbols.namesake
molecular beam epitaxy
General Materials Science
Science & Technology
van der Waals epitaxy
HEXAGONAL BORON-NITRIDE
Mechanical Engineering
transition metal dichalcogenides
WSe2
MONOLAYERS
General Chemistry
BILAYER
Condensed Matter Physics
Crystallographic defect
METAL DICHALCOGENIDE
homoepitaxy
Mechanics of Materials
symbols
GROWTH
van der Waals force
SAPPHIRE
Molecular beam epitaxy
Stacking fault
Subjects
Details
- ISSN :
- 20531583
- Volume :
- 7
- Database :
- OpenAIRE
- Journal :
- 2D Materials
- Accession number :
- edsair.doi.dedup.....248db02c925495529f68ae35c7c2e451
- Full Text :
- https://doi.org/10.1088/2053-1583/ab70ec