Monolithic Integration of InGaAs on Si(001) Substrate for Logic Devices

This chapter deals with the monolithic integration of InGaAs semiconductor on (001)-oriented Si substrate. This starts with a brief introduction to III-V semiconductor epitaxy, the effect of strain, and the relaxation mechanisms. An overview of the different structural defects' families is also included in the section. In a second part, the two most popular III-V growth techniques that are molecular beam epitaxy and metal-organic vapor phase epitaxy are compared. The main challenge in the heterogeneous integration of InGaAs on Si resides in the material mismatch between both semiconductors that results in the high-density generation of crystalline defects. In this chapter, several options such as strain-relaxed buffers, wafer bonding, epitaxial lateral growth, and selective area growth have been considered to reduce the defect density in III-V compounds on Si, which will be reviewed. Finally, a rich literature completes the chapter.