65 results on '"Murakami, E."'
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2. Positive Bias Temperature Instability of SiC-MOSFETs Induced by Switching Operation (AC-PBTI)
3. Special Features in Stress Degradation of SiC-MOSFETs Observed in I-V Characteristics
4. Comprehensive lifetime prediction for intrinsic and extrinsic TDDB failures in Cu/Low-k interconnects
5. High reliable strain measurement for power devices using STEM-CBED method
6. Modeling of Cu IMD-TDDB caused by extrinsic defects
7. Three-Dimensional Visualization Technique for Crystal Defects in High Performance CMOS Devices with Embedded SiGe-Source/Drain
8. A new detection method of soft breakdown in ultra-thin gate oxides by light-emission analysis
9. Study of formation mechanism of nickel silicide discontinuities in high performance CMOS devices
10. Strain mapping technique for performance improvement of strained MOSFETs with scanning transmission electron microscopy
11. A study of SRAM NBTI by OTF measurement
12. Electric-field and temperature dependencies of TDDB degradation in Cu/Low-K damascene structures
13. Analysis of Ni silicide abnormal growth mechanism using advanced TEM techniques
14. Theory and Practice of On-the-fly and Ultra-fast VT Measurements for NBTI Degradation: Challenges and Opportunities
15. A Comprehensive Study of FN Degradation for Driver MOSFETs in Nonvolatile Memory Circuit
16. Endurance and Retention Characteristics of SONOS EEPROMs Operated using BTBT Induced Hot Hole Erase
17. Effect of Compensation Implant in SONOS Flash EEPROMs
18. A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics.
19. Controlling injected electron and hole profiles for better reliability of split gate SONOS.
20. Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs.
21. Neutron-induced soft error in logic devices using quasi-monoenergetic neutron beam.
22. Modeling of NBTI degradation and its impact on electric field dependence of the lifetime.
23. Suppression of stress-induced voiding in copper interconnects.
24. NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation.
25. A new extraction method of device parameters for mass production E-T data analysis.
26. Ultra-Shallow and Abrupt Boron Profiles in Si by the δ-Doping Technique
27. A highly manufacturable 0.18 /spl mu/m generation logic technology.
28. Proposal of line element chain coding.
29. Ultra high hole mobility in strain-controlled Si-Ge modulation-doped FET.
30. /spl delta/-doped source/drain 0.1-/spl mu/m n-MOSFETs with extremely shallow junctions.
31. Formation of High Quality Si1-xGex/Si Crystals Heterostructure Limited Area MBE Growth
32. Comprehensive lifetime prediction for intrinsic and extrinsic TDDB failures in Cu/Low-k interconnects.
33. EFFECT OF ATRIAL NATRIURETIC POLYPEPTIDES ON PLATELET FUNCTION
34. MOS-FETs Fabricated by SPE-SOI Technology
35. Modeling of NBTI degradation and its impact on electric field dependence of the lifetime
36. Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs
37. Automatic classification of analogue modulation signals by statistical parameters
38. Ultra high hole mobility in strain-controlled Si-Ge modulation-doped FET
39. Controlling injected electron and hole profiles for better reliability of split gate SONOS
40. Impact of low-standby-power device design on hot carrier reliability
41. Suppression of stress-induced voiding in copper interconnects
42. A new extraction method of device parameters for mass production E-T data analysis
43. NBT-induced hot carrier (HC) effect: positive feedback mechanism in p-MOSFET's degradation
44. Proposal of line element chain coding
45. Finding users' latent interests for recommendation by learning classifier systems
46. Endurance and Retention Characteristics of SONOS EEPROMs Operated using BTBT Induced Hot Hole Erase.
47. Impact of low-standby-power device design on hot carrier reliability.
48. Application of large scale binary optical elements to high resolution projection optics used for microlithography.
49. Formation of Si-on-Insulator Structure by Lateral Solid Phase Epitaxial Growth with Local P-Doping.
50. High reliable strain measurement for power devices using STEM-CBED method.
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