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Formation of Si-on-Insulator Structure by Lateral Solid Phase Epitaxial Growth with Local P-Doping.
- Source :
- 1987 Symposium on VLSI Technology Digest of Technical Papers; 1987, p89-90, 2p
- Publication Year :
- 1987
Details
- Language :
- English
- Database :
- Complementary Index
- Journal :
- 1987 Symposium on VLSI Technology Digest of Technical Papers
- Publication Type :
- Conference
- Accession number :
- 92058191