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A method for fluorescence enhancement was proposed using ultrafast laser-induced cavitation bubbles in dye solution. Bubble-enhanced fluorescence can be used in the imaging of protein crystals.

This study explored the effects of Hugan Buzure (HBR) on cell apoptosis and autophagy in hepatocellular carcinoma (HCC) and the molecular mechanisms of the PI3K/Akt/mTOR signaling pathway. HepG2 and Huh7 cell viability was detected by the tetramethylazolium salt colorimetric (MTT) method. Cell proliferation was measured using the colony formation method. Hoechst 33258 staining and flow cytometry were employed to detect apoptosis. In addition, immunofluorescence was carried out to evaluate the expression of LC3. Western blot was performed to detect the expression of Bcl-2, Bax, Caspase-3, LC3, Beclin1, p62 (SQSTM1), and PI3K/Akt/mTOR signal pathway-related proteins in HCC cells. This work verified that HBR reduced HepG2 and Huh7 cell proliferation in a concentration-dependent manner. Treatment with HBR caused an obvious improvement of the apoptosis rate, accompanied by the increase in Bax/Bcl2, Caspase3, LC3II, and Beclin1 levels, respectively. Furthermore, HBR downregulated the expression of p62, p-PI3K, p-Akt, and p-mTOR proteins. HBR combined with HCQ enhanced HBR-induced apoptosis. In conclusion, HBR induced autophagy and apoptosis through PI3K/Akt/mTOR signaling pathway, leading to HCC cell death. This research preliminarily suggested the potential role of HBR in the treatment of HCC.

High-Voltage power Integrated Circuits (HVICs) are widely used to realize high-efficiency power conversions (e.g., AC/DC conversion), gate drivers for power devices and LED lighting, and so on. The Bipolar-CMOS-DMOS (BCD) process is proposed to fabricate devices with bipolar, CMOS, and DMOS modes, and thereby realize the single-chip integration of HVICs. The basic integrated technologies of HVICs include High-Voltage (HV) integrated device technology, HV interconnection technology, and isolation technology. The HV integrated device is the core of HVICs. The basic requirements of the HV integrated device are high breakdown voltage, low specific on-resistance, and process compatibility with low-voltage circuits. The REduced SURFace field (RESURF) technology and junction termination technology are developed to optimize the surface field of integration power devices and breakdown voltage. Furthermore, the ENhanced DIelectric layer Field (ENDIF) and REduced BULk Field (REBULF) technologies are proposed to optimize bulk fields. The double/triple RESURF technologies are further developed, and the superjunction concept is introduced to integrated power devices and to reduce the specific on-resistance. This work presents a comprehensive review of these technologies, including the innovation technologies of the authors' group, such as ENDIF and REBULF, substrate termination technology prospective integrated technologies and HVICs in wide band gap semiconductor materials are also discussed.

In this paper, a novel cut-off degradation of output current induced by high fluence neutron radiation is investigated for high-voltage silicon-on-insulator lateral double-diffused MOSFET (HV SOI LDMOS). Unlike low/middle fluence, severe current collapse occurs at low drain voltage. Combining experiments and energy band analysis, we reveal that a secondary charge removal effect leads to cut-off degradation, which is closely related to the field enhancement and high-density defects at high neutron fluence. Although the gate channel can be turned on after radiation, below drain threshold voltage (VDT), electron drift is blocked by a potential barrier caused by the local space charge region with low trap occupation rate, rather than the global impact at low fluence. In addition, the influences of structural parameters on the cut-off degradation and VDT are studied to guide the rad-hardening design of HV SOI LDMOS.

With the development of modern economy, exhibition industry has become an important platform for the construction of modern market system and open economic system. At present, there are many indicators to measure the competitiveness of urban exhibition industry in China. The annual index of competitiveness of Chinese city exhibition industry initiated by China convention and exhibition economic association has become the most authoritative report of competitiveness index of city exhibition industry. The exhibition industry is also one of the important evaluation criteria. This paper mainly uses the above two methods to calculate the exhibition competitiveness index of Chinese cities, and introduces the correlation coefficient to compare the stability of the ranking of the exhibition competitiveness index by the two methods. The study found that the correlation coefficient between the cities at the top and bottom of the ranking was large, that is, the ranking was relatively stable and barely changed. However, the ranking correlation coefficient of cities in the middle is smaller and the change is significant. However, the correlation coefficients of the cities ranked 21-40 are less than those of the top 20 cities, which also indicates that the abrupt change in the ranking of individual cities will affect the overall stability. Because of this, it shows that the evaluation indexes under different weights have a certain influence on the calculation of the comprehensive index of the city’s exhibition competitiveness, and the AHP method can better reflect the advantages and disadvantages of the city’s exhibition industry development.

A lateral power device with complementary homogenization field structure (C-HOF) is proposed and experimentally proved in this letter. The C-HOF is formed by introducing a P-type metal insulator semiconductor (P-MIS) on the N-MIS. The complementary P/N-MIS and the PN junction between them ensure the homogenized field ${E}_{\text {hof}}$ distributions and the high breakdown voltage ${V}_{\text {B}}$ in higher doping. Based on the C-HOF mechanism, experiments were performed, which demonstrated that a significantly increased N-drift doping dose up to 6.8 $\times \,\,10^{{12}}$ cm−2 can be realized in the C-HOF device. A measured low specific on-resistance ${R}_{ {{\scriptscriptstyle \text{ ON}}},\text {sp}}$ of 19.7 $\text{m}\Omega \cdot $ cm2 was observed in the C-HOF device under a ${V}_{\text {B}}$ of 426 V, realizing a high figure of merit $FOM = {V}_{\text {B}}^{{2}}/{R}_{ {{\scriptscriptstyle \text{ON}}},\text {sp}}$ of 9.21 MW/cm2 and a reduction of 42.8% when compared with the theoretical value of the triple RESURF technology under the same ${V}_{\text {B}}$ .

The longer the baseline length of an airborne array synthetic aperture radar (SAR) is, the richer the ground object information can be resolved. The airborne array flexible SAR can overcome the limitation that the baseline length is limited by the belly length by attaching the antenna to the wing. However, fusing the airborne array flexible SAR distributed position and orientation system (POS) data under the wing and the belly is a major difficulty. To address this issue, the paper analyzes the inconsistency of airborne array flexible SAR data with a distributed position and orientation system (POS) and proposes a three-dimensional imaging method of airborne array flexible SAR based on distributed POS by fusing the Doppler center, yaw angle, and time of the observation data. By using distributed POS data, flexible data can obtain higher resolution than single-POS processing. The experiment of airborne array flexible SAR data proves the superiority of the proposed method.

Metallic micro/nano structures with special physicochemical properties have undergone rapid development owing to their broad applications in micromachines and microdevices. Ultrafast laser processing is generally accepted as an effective technology for functional structures manufacture, however, the controllable fabrication of specific metallic micro/nano structures remains a challenge. Here, this work proposes a novel strategy of laser induced transient solid-liquid transition to fabricate unique structures. Through modulating the transient state of metal from solid to liquid phase using the initial pulse excitation, the subsequent ultrafast pulse-induced recoil pressure can suppress the plasma emission and removal of liquid phase metals, resulting in the controllable fabrication of coffee-ring structures. The solid-liquid transition dynamics, which related with the transient reflectivity and plasma intensity, are revealed by established two temperature model coupled with molecular dynamics model. The coffee-ring structure exhibits tunable structure color owing to various optical response, which can be used for color printing with large scale and high resolution. This work provides a promising strategy for fabricating functional micro/nano structures, which can greatly broaden the potential applications.

The analytical model and mechanism of homogenization field (HOF) for lateral power devices is developed in this article. The HOF structure features periodical voltage sustaining cells connected in series from source to drain, which introduces the periodic field modulation to realize the 3-D homogenization of electric field. In the model, the periodic electric field distribution of the HOF structure is obtained by solving the Poisson’s equation in one half HOF-cell. Then, a design formula is deduced by considering the optimal field distribution. Two lateral double-diffused metal–oxide semiconductor (LDMOS) devices using the HOF structure were fabricated to demonstrate the analytical model. The analytical model is in good agreement with both the simulations and experiments. In the experiments, a low $R_{ \mathrm{\scriptscriptstyle ON},sp}$ of 53.3 $\text{m}\Omega \cdot $ cm2 was realized under a high ${V}_{B}$ of 669.5 V, achieving a HOF LDMOS with high figure of merit FOM $= {V}_{B}^{2}/{R}_{ \mathrm{\scriptscriptstyle ON},sp}$ of 8.41 MW/cm2.

Two new sesquiterpenoids, curcumanes E (1) and F (2), were isolated from the rhizome of Curcuma longa, and their structures and absolute configurations were examined using extensive spectroscopic analyses and ECD calculations. Interestingly, compounds 1 and 2 are diastereoisomers possessing a rare sesquiterpenoid skeleton that has been reported only once before. Both curcumanes E and F exhibit significant vasorelaxant effects against KCl-induced contraction of rat aortic rings, with EC50 values of 5.10 ± 0.79 and 5.58 ± 1.77 μM, respectively. These findings enrich the data concerning this rare type of sesquiterpenoids and further indicate that these rare sesquiterpenoids can effectively reduce blood pressure.

Background Sugarcane is the most important sugar crop, contributing > 80% of global sugar production. High sucrose content is a key target of sugarcane breeding, yet sucrose improvement in sugarcane remains extremely slow for decades. Molecular breeding has the potential to break through the genetic bottleneck of sucrose improvement. Dissecting the molecular mechanism(s) and identifying the key genetic elements controlling sucrose accumulation will accelerate sucrose improvement by molecular breeding. In our previous work, a proteomics dataset based on 12 independent samples from high- and low-sugar genotypes treated with ethephon or water was established. However, in that study, employing conventional analysis, only 25 proteins involved in sugar metabolism were identified . Results In this work, the proteomics dataset used in our previous study was reanalyzed by three different statistical approaches, which include a logistic marginal regression, a penalized multiple logistic regression named Elastic net, as well as a Bayesian multiple logistic regression method named Stochastic search variable selection (SSVS) to identify more sugar metabolism-associated proteins. A total of 507 differentially abundant proteins (DAPs) were identified from this dataset, with 5 of them were validated by western blot. Among the DAPs, 49 proteins were found to participate in sugar metabolism-related processes including photosynthesis, carbon fixation as well as carbon, amino sugar, nucleotide sugar, starch and sucrose metabolism. Based on our studies, a putative network of key proteins regulating sucrose accumulation in sugarcane is proposed, with glucose-6-phosphate isomerase, 2-phospho-D-glycerate hydrolyase, malate dehydrogenase and phospho-glycerate kinase, as hub proteins. Conclusions The sugar metabolism-related proteins identified in this work are potential candidates for sucrose improvement by molecular breeding. Further, this work provides an alternative solution for omics data processing.

Two new sesquiterpenoids, curcumanes E (

Total-ionizing-dose (TID) radiation response on unclosed edge termination is investigated for high voltage silicon-on-insulator (SOI) laterally diffused metal–oxide–semiconductor (LDMOS) in this article. Radiation-induced dual-channel leakage current model is proposed to reveal the mechanism of leakage current generation at OFF-state. Radiation causes a mass of positive oxide trapped charges generated in field oxide (FOX) layer and buried oxide layer. Owing to the P-SOI layer with significantly low doping concentration, two inversion channels are formed at the surface and bottom in the edge termination region, which provides parallel conduction paths. Electrons from the source N+ are pulled down and flow along the bottom channel while punchthrough occurring. The radiation-induced leakage current could be suppressed by thinning FOX layer, increasing the doping concentration of the P-SOI layer, and thickening the SOI layer.

The global region normalization (GRN) method is proposed to optimize the lateral superjunction (SJ), in this article. The GRN features normalizations in the global doping range of the SJ from zero to the maximum doping concentration ${N}_{\text {max}}$ that was theoretically determined by the pillar width ${W}_{\text {SJ}}$ . Then the optimization covers all the possible design points of the SJ. For the SJ with given ${W}_{\text {SJ}}$ and pillar length ${L}_{\text {SJ}}$ , the specific ON-resistance ${R}_{\text {on,sp}}$ and breakdown voltage ${V}_{\text {B}}$ are normalized in the global region of the doping concentra- tion ${N}_{\text {SJ}}$ . With the GRN method, the global normalization function ${f}_{\eta }$ is deduced to reflect the quantitative variation trend of ${R}_{\text {on,sp}}$ - ${V}_{\text {B}}$ and a design formula of the optimized ${N}_{\text {SJ}}$ is presented. Furthermore, lateral SJ devices were fabricated according to the formula. The measured ${R}_{\text {on,sp}}$ values of the SJ devices are reduced by almost 35% when compared with the theoretical limit of the triple RESURF device in a voltage range of 100–400 V. The experiments also reveal that the measured net ${R}_{\text {on,sp}}$ of the SJ region approaches the ${R}_{\text {on.sp}} \propto {V}_{\text {B}}^{{1.03}}$ relationship.

A visible light photoredox-catalyzed N-centered radical addition/semipinacol rearrangement cascade of cycloalkanol-substituted 1H-indenes or styrenes with N-arylsulfonyl protected 1-aminopyridinium salts is presented. This protocol provides an efficient access to β-amino (spiro)cyclic ketones at ambient temperature, and has the advantages of broad substrate scope, good functional group tolerance, simple operation and mild conditions.

This article proposes a novel ultralow specific ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ ) triple reduced surface field (RESURF) lateral double-diffused MOSFET (LDMOS) with sandwich n-p-n layer. Compared with the conventional triple RESURF LDMOS with n-type top layer (NTTR LDMOS), the new structure is characterized by an additional N-buried layer below the P-buried layer. Due to the introduction of N-buried layer, the concentration of N-top layer will decrease to ensure charge balance, thus making the surface electric field distribution better and the higher additional doping introduced by N-top and N-buried layers can be achieved. The dose and implantation energy of n-p-n layers were simulated and optimized. Furthermore, in order to eliminate the premature avalanche breakdown occurring in the source-centered termination region, substrate termination technology (STT) is applied to avoid the high electric field peaks generated in the curved source region with small curvature radius. But the use of STT makes it easy to breakdown in the transitional region compared with the straight region. Therefore, the transitional region is studied and the crucial parameter $\Delta {L}$ in the layout of transitional region is also optimized. The fabricated device experimentally demonstrated improved performance with low ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ of 78.3 $\text{m}\Omega \cdot $ cm2 and high breakdown voltage (BV) of 795 V, and the experimental ${R}_{ \mathrm{\scriptscriptstyle {ON},sp}}$ is 26.8% lower than that of the conventional triple RESURF LDMOS (CTR LDMOS) and 10% lower than that of the NTTR LDMOS based on ${L}_{d} = 67 \mu \text{m}$ , which can break the silicon limit of CTR and NTTR LDMOS and meet the demand of 700-V high-voltage integrated circuit applications.

Recently, Shu et al. published “Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS.” This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal–oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.

A novel Homogenization Field Technology (HOFT) in lateral power devices is proposed and experimentally proved in this letter. By introducing the periodically discrete metal insulator semiconductor (MIS) structure, which realizes periodic equal potential and self-charge balance, the HOFT obtains almost uniform surface and bulk electric field distributions in the voltage sustaining layer. Therefore, the new device harvests both higher breakdown voltage V B and lower specific on-resistance R on,sp than those of the conventional reduced surface field (RESURF) technology in much higher and wider doping dose range. The experiment of the HOFT device realized a V B of 672 V and a R on,sp of 56.7 $\text{m}\Omega ~\cdot $ cm2 under a high doping dose of $5.6\times 10^{{12}}$ cm−2, which represents a reduction of 33.8% when compared with the theoretical value of the triple RESURF technology.

To study the expression profiles changes of miRNA in apheresis platelets after 1, 3 and 5 days of storage.The apheresis platelets were collected from 20 volunteer blood donors. After mixing fully, the platelets were stored in a shaker with (22±2) ℃ horizontal oscillation. The samples were taken on the 1st, 3rd and 5th day, and used to sequence for miRNAs by DNA nanoball (DNB) sequencing technology, which were named as C_1, C_3 and C_5, respectively. The expression level of platelets miRNA was standardized by transcripts per kilobase million (TPM) algorithm. MiRNAs with P-value0.001 and the expression difference of more than two times were considered as significant difference between two groups. The expression of miRNAs was verified by real-time fluorescence quantitative PCR (RT-qPCR).By DNB sequencing, there were 688, 730, and 679 platelet miRNAs expressed in C_1, C_3 and C_5 group, respectively. Cluster analysis showed that the expression profile of miRNAs changed significantly. The expression level of the first 20 high abundance miRNAs was about 4/5 of the total amounts of expressed miRNAs in each group, which the top five miRNAs were miR-21-5p, miR-26a-5p, miR-199a-3p, miR-126-3p, and let-7f-5p. The correlation of high abundance platelet miRNAs among the three groups was high (R2=0.876, R2=0.979, R2=0.937, respectively) and the differences were not statistically significant (P0.05). Compared with the differential expression of platelet miRNAs with more than 1 000 TPM in the C_3 and C_1 group, there were 6 differentially expressed miRNAs, including 3 up-regulated (miR-146a-5p, miR-379-5p, and miR-486-5p) and 3 down-regulated (miR-652-3p, miR-142-5p, and miR-7-5p). While in the C_5 and C_1 group, there were 4 differentially expressed miRNAs, including 2 up-regulated (miR-146a-5p and let-7b-5p) and 2 down-regulated (miR-30d-5p and miR-142-5p). Compared with the differentially expression of platelet miRNAs between 1-1 000 TPM in the C_3 and C_1 group, there were 133 differentially expressed miRNAs, in which 99 were up-regulated and 34 were down-regulated. While in the C_5 and C_1 group, there were 77 differentially expressed miRNAs, in which 31 were up-regulated and 46 were down-regulated. The six selected differentially expressed miRNAs verified by RT-qPCR were consistent with those of sequencing.The expression profiles of platelets miRNAs change significantly among 1, 3, and 5 d of storage in vitro.血小板miRNA的表达谱分析.研究在体外常规储存1、3和5 d血小板微小RNA(miRNA)的表达谱，探讨miRNA在血小板储存期的变化.留取来自无偿献血捐献者单采血小板20份，摇匀后等量混合，贮存于（22±2）℃恒温血小板振荡保存箱中。分别在d 1、3和5取样（分别命名为C_1、C_3和C_5），应用DNA纳米球（DNB）测序技术对血小板miRNA组进行测序，采用每千百万碱基的转录本（TPM）算法标准化miRNA的表达水平，组间miRNA表达差异2倍（P0.001）认为表达差异具有统计学意义。采用实时荧光定量PCR方法验证miRNA的表达.通过DNB测序，分别获得C_1、C_3和C_5组688、730和679个表达的血小板miRNA，聚类分析表明其表达谱发生明显变化。在C_1、C_3和C_5组中前20个高表达miRNA的表达量约占各组miRNA总表达量的4/5，各组前5位的miRNA均为miR-21-5p、miR-26a-5p、miR-199a-3p、miR-126-3p和let-7f-5p。C_1、C_3和C_5组血小板高表达的55个miRNA（1 000 TPM）组间表达模式高度相似，其差异无统计学意义（P0.05）。通过对高表达miRNA（1 000 TPM）在各组中的差异表达分析发现，与C_1组相比，C_3组共有6个miRNA显著差异表达，其中表达上调的是miR-146a-5p、miR-379-5p和miR-486-5p，表达下调的是miR-652-3p、miR-142-5p和miR-7-5p；C_5组共有4个miRNA显著差异表达，表达上调的是miR-146a-5p和let-7b-5p，表达下调的是miR-30d-5p和miR-142-5p。对表达量为1-1000 TPM之间miRNA差异表达分析发现，与C_1组相比，C_3组有133个显著差异表达的miRNA，其中表达上调是99个，表达下调是34个；C_5组中有77个显著差异表达的miRNA，其中表达上调是31个，表达下调是46个。检测的6个差异表达miRNA的荧光定量PCR结果与测序结果基本一致.通过对储存1、3和5 d血小板miRNA组进行测序，发现随着血小板体外储存时间的延长，miRNA表达谱发生明显改变.