Back to Search
Start Over
Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density
- Source :
- IEEE Transactions on Device and Materials Reliability. 22:403-409
- Publication Year :
- 2022
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2022.
Details
- ISSN :
- 15582574 and 15304388
- Volume :
- 22
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Device and Materials Reliability
- Accession number :
- edsair.doi...........33c37477eaf7e7703a948811ebb658de