Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density

MLA

Dong Fang, et al. “Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density.” IEEE Transactions on Device and Materials Reliability, vol. 22, Sept. 2022, pp. 403–09. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........33c37477eaf7e7703a948811ebb658de&authtype=sso&custid=ns315887.

APA

Dong Fang, Ming Qiao, Tao Zhong, Kui Xiao, Zheng Bian, Zhaoji Li, & Bo Zhang. (2022). Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density. IEEE Transactions on Device and Materials Reliability, 22, 403–409.

Chicago

Dong Fang, Ming Qiao, Tao Zhong, Kui Xiao, Zheng Bian, Zhaoji Li, and Bo Zhang. 2022. “Failure Mechanism of Aluminum Diffusion in Low-Voltage Trench MOSFET With High Cell Density.” IEEE Transactions on Device and Materials Reliability 22 (September): 403–9. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........33c37477eaf7e7703a948811ebb658de&authtype=sso&custid=ns315887.