Back to Search Start Over

A Gradient Doped Integrated JFET With Improved Current Capability for HV Start-Up Circuit

Authors :
Zhangyi'an Yuan
Dican Hou
Ming Qiao
Zhaoji Li
Bo Zhang
Source :
IEEE Electron Device Letters. 43:1097-1100
Publication Year :
2022
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2022.

Details

ISSN :
15580563 and 07413106
Volume :
43
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........238e18d9b1de87103ab859177d9d0570