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This paper aims to measure and simulate the warpages of 3D through-silicon via (TSV) die-stacked dynamic-random-access-memory (DRAM) packages during the manufacturing process. The related die stresses and keep-out zone (KOZ) for the stacked dies in the packages at room temperature are further calculated with the validated simulation model. The out-of-plane deformations (or warpages) of the packages from the full-field shadow moiré are documented under temperature loading and found consistent with those from finite-element method (FEM). The results of the stresses and KOZs at the proximity of a single TSV for each die in the package at room temperature are presented. It is found that the sizes of KOZs in four-die stacked DRAM packages with and without epoxy molding compound (EMC) at room temperature are dominated by the horizontal pMOS transistors and more than double the size in wafer-level die. The sizes of KOZs at each die are similar in this four-die stacked DRAM package, even though the stresses at each die are apparently different. [ABSTRACT FROM AUTHOR]

Among various image fusion methods, intensity-hue-saturation (IHS) technique is capable of quickly merging the massive volumes of data. For IKONOS imagery, IHS can yield satisfactory "spatial" enhancement but may introduce "spectral" distortion, appearing as a change in colors between compositions of resampled and fused multispectral bands. To solve this problem, a fast IHS fusion technique with spectral adjustment is presented. The experimental results demonstrate that the proposed approach can provide better performance than the original IHS method, both in processing speed and image quality. [ABSTRACT FROM PUBLISHER]

Describes the use of recombinant retinoblastoma gene product to screen a human complementary DNA expression library. Reports that the isolated retinoblastoma binding protein genes exist in separate loci and produce discrete messenger RNAs.