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Describes the growth and characterization of two-dimensional electron gas mobility in a stair-step type of aluminum gallium nitride/gallium nitride heterostructures. Components of the structure; Calculation of sheet carrier density and mobility for the heterostructure; Factors affecting the electron mobility.

Investigates the formation of p[sub +]n junctions by ion implantation and laser annealing. Presentation of the implants and anneal regimes; Effect of rapid thermal annealing on boron implanted silicon pre-amorphized samples; Role of laser annealing in dopant activation and anomalous diffusion suppression.

Describes the fabrication of titanium (Ti)-silicided shallow n[sup +]p junction by phosphorus ion implantation in amorphous-silicon/Ti bilayer thin film. Application of rapid thermal annealing with post-conventional furnace annealing treatment; Facilitation of silicidation and damage annihilation; Crystallization of titanium silicide.

Details the formation of shallow p[sup +]n junctions by implanting BF[sup +][sub 2] ions into thin polycrystalline silicon films and subsequent annealing. Occurrence of an anomalous boron diffusion; Effect of silicidation on the junction profile; Factor attributed for the large boron redistribution.

We report on the preparation and field emission properties of quasi-aligned silicon carbon nitride (SiCN) nanorods. The SiCN nanorods are formed by using a two-stage growth method wherein the first stage involves formation of a buffer layer containing high density of nanocrystals by electron cyclotron resonance plasma enhanced chemical vapor deposition and the second stage involves using microwave plasma enhanced chemical vapor deposition for high growth rate along a preferred orientation. It should be noted that growth of the SiCN nanorods is self-mediated without the addition of any metal catalyst. Scanning electron microscopy shows that the SiCN nanorods are six-side-rod-shaped single crystals of about 1-1.5 μm in length and about 20-50 nm in diameter. Energy dispersive x-ray spectrometry shows that the nanorod contains about 26 at. % of Si, 50 at. % of C, and 24 at. % of N. Characteristic current-voltage measurements indicate a low turn-on field of 10 V/μm. Field emission current density in excess of 4.5 mA/cm[sup 2] has been observed at 36.7 V/μm. Moreover, SiCN nanorods exhibited rather stable emission current under constant applied voltage. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]