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The process limitation for forming Ti silicided shallow junction by BF[sup +, sub 2]....

Authors :
Juang, M.H.
Lin, C.T.
Jan, S.T.
Cheng, H.C.
Source :
Applied Physics Letters; 8/30/1993, Vol. 63 Issue 9, p1267, 3p, 1 Chart, 2 Graphs
Publication Year :
1993

Abstract

Details the formation of shallow p[sup +]n junctions by implanting BF[sup +][sub 2] ions into thin polycrystalline silicon films and subsequent annealing. Occurrence of an anomalous boron diffusion; Effect of silicidation on the junction profile; Factor attributed for the large boron redistribution.

Details

Language :
English
ISSN :
00036951
Volume :
63
Issue :
9
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
4294143
Full Text :
https://doi.org/10.1063/1.109753