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In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (VO2), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed of a voltage source and two-terminal VO2 thin film device serially connected with a standard resistor. The systematic procedures where the oscillation occurred were explained based on the electrical relationship between the VO2 device and resistor, and the generation window of the oscillation was determined. In particular, the oscillation frequency could be controlled by adjusting an external voltage and increased up to >0.5 MHz. [ABSTRACT FROM AUTHOR]

The piezoelectric properties of 4-(4-dimethylaminostyryl) methylpyridine p-toluene sulfonate (DAST)-polydimethylsiloxane (PDMS) composite thin film was investigated. Flexible nanogenerators based on zinc oxide (ZnO) nanowire (NW) arrays/DAST-PDMS were fabricated. DAST holds organic crystal structure, and it can possess piezoelectric properties, and it can enhance the piezoelectric properties of ZnO NW arrays. PDMS can not only mix DAST powder with a liquid to prepare a thin film but also protect ZnO NW arrays and DAST from deterioration. When applying pressure with a balance weight of 100 g, the flexible nanogenerator based on ZnO NW arrays/DAST-PDMS can generate an output voltage of 2.3 V, which is much larger than that of the nanogenerator based on ZnO NW arrays. The effect of the strength of vertical external force, frequency of vertical external force, and degree of bending deformation on the ZnO NW arrays/DAST-PDMS flexible nanogenerators were investigated in this Letter. In our experiments, the output voltage of the ZnO NW arrays/DAST-PDMS flexible nanogenerators can reach 3.3 V. After bending the nanogenerator 20 times, the energy collection device based on the ZnO NW arrays/DAST-PDMS flexible nanogenerator was able to light an LED bulb. [ABSTRACT FROM AUTHOR]

Examines the preparation of germanium- and silicon-doped indium-oxide thin films by radio-frequency magnetron sputtering method. Carrier concentrations and Hall mobilities of the materials; Dependence of film resistivity on atomic ratio; Measurement of film composition by x-ray photoelectron spectroscopy.

Examines an active oxygen plasma of disk shape to ash photoresist films. Development of dual source of atomic oxygen; Ability of vacuum ultraviolet photons to ash resists at high rates; Immersion of the polymer coated substrate in an active oxygen plasma.

We have studied spontaneous structural ordering in epitaxial barium stannate thin films, grown on SrTiO3(001) substrates by pulsed laser deposition. X-ray diffraction analysis revealed satellite reflections around the Bragg peaks, indicative of nanoscale periodic ordering in the out-of-plane direction. We find that mass transport strongly affects this spontaneous ordering, and that the thin film growth rate can be used to tune the periodicity of the superlattices, here between 4.3 and 57.7 nm. [ABSTRACT FROM AUTHOR]

Molybdenum doped (0–1 at. %) indium oxide thin films with high near infrared (NIR) transparency and carrier mobility were deposited on Corning-1737 glass substrates at 400 °C by spray pyrolysis experimental technique. Films with mobility as high as ∼149 cm2/V s were obtained when annealed in vacuum at 550 °C, which also possess carrier concentration of ∼1×1020 cm-3 and resistivity as low as ∼4.0×10-4 Ω cm. Further, both the average visible transmittance (500–800 nm) and the average NIR transmittance are >83%. This clearly shows that the transmittance is extended well into the NIR region. [ABSTRACT FROM AUTHOR]

A technology to make integrated optical chemical gas sensors using sol-gel surfactant-templated mesoporous thin films was demonstrated. The sensor was prepared by dip coating of an ordered mesoporous silica thin film onto a tapered thin TiO2 layer sputtered on top of a tin-diffused glass waveguide. The sensor employs single-beam polarimetric interferometry to detect molecular adsorption in the mesoporous silica film because the adsorption can lead to a change of the phase difference (Δ[lowercase_phi_synonym]) between the fundamental transverse electric (TE0) and magnetic (TM0) modes propagating in the waveguide. The sensor is sensitive to humidity and NH3 gas at room temperature (RT). The sensitivity of Δ[lowercase_phi_synonym]>180° was detected for 40 min exposure of the sensor to 2 ppm of NH3 in dry air. The sensor was recoverable from the HN3 exposure but its recovery was too slow to cause a detectable Δ[lowercase_phi_synonym] per unit time. The slow response and recovery of the sensor were ascribed to slow diffusion of gaseous molecules in the laterally oriented tube-like pores of the silica film. [ABSTRACT FROM AUTHOR]

Polymorphic (HfxZr1−x)O2 (HZO) thin films exhibit ferroelectric, dielectric, and antiferroelectric properties across a wide compositional range due to the existence of orthorhombic, monoclinic, and tetragonal phases. To better understand the phase stability across the HfO2–ZrO2 compositional range, we investigate the structural evolution of HZO thin films in situ via high-temperature x-ray diffraction (HTXRD) for five different compositions [ZrO2, (Hf0.23Zr0.77)O2, (Hf0.43Zr0.57)O2, (Hf0.67Zr0.33)O2, and HfO2]. The real-time monitoring of HZO crystallization reveals a competing driving force between the tetragonal and monoclinic phase stabilities for HfO2-rich vs ZrO2-rich compositions. Additionally, we confirm an XRD peak shift toward lower 2θ with increasing temperature in ZrO2, (Hf0.23Zr0.77)O2, and (Hf0.43Zr0.57)O2 films, which we ascribe to the appearance of a metastable orthorhombic phase during heating. A monotonic trend for the onset crystallization temperature is reported for five compositions of HZO and reveals an increase in onset crystallization temperature for HfO2-rich compositions. Relative intensity fraction calculations suggest a higher fraction of monoclinic phase with increasing annealing temperature for (Hf0.67Zr0.33)O2. This study of phase stability and onset crystallization temperatures offers insight for managing the thermal budget for HZO thin films, especially for temperature-constrained processing. [ABSTRACT FROM AUTHOR]

Investigates the low resistivity of cadmium sulphide (CdS) thin films through chemical bath deposition technique. Contribution of sulphide annealings to the enlargement of CdS cubic cells; Account on hydrogen[sub 2]+indium annealing at higher temperatures; Details on the resistivity of the CdS films at an optimum annealing temperature.

Investigates the effect of the chromium alloying addition to the iron layers in the Fe/Cr superlattice films on the magnetoresistance behavior. Exhibition of improved giant magnetoresistance effect; Dependence on the thickness of the Cr layer; Existence of antiferromagnetic coupling in the films.

Examines the use of chemical vapor deposition method in predisposing silicon dioxide thin films. Accounts of several source material for silicon dioxide thin films; Conversion of the incoming oxygen gas through an ozonator; Utilization of multipurpose recording spectrophotometer in measuring ozone concentration of the oxygen gas flow rate.

Examines the influence of substrate misorientation on the structure and morphology of In[sub 0.2]Ga[sub 0.8]As films grown by molecular beam epitaxy on vicinal, near (001), gallium arsenide substrates. Use of transmission electron microscopy; Angle of dislocation networks in interfaces with exceeding critical thickness.

Examines YBa[sub 2]Cu[sub 3]O[sub 7-x] thin films using a designed dc-94.92 MHz hybrid plasma magnetron sputtering system. Implication of the cathode current for film crystalline orientation; Indication of increased emission line intensity through optical emission spectroscopy; Discussion on the crystallinity of films.

Examines the excimer laser-ablated bismuth titanate thin films. Methods used to study the structure of the films; Deposition rate of bismuth titanate films; Relationship between the process-structure-properties of the bismuth titanate thin films.

Examines the fabrication of superconducting first-order gradiometers made from YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin-film flux transformers. Composition of the flux transformers; Measurement of the magnetic field gradient; Comparison between the high and low T[sub c] gradiometers.

Proposes an ion implantation profile modeling of nitrocellulose thin film coated substrates. Concentration enhancement at the surface of materials; Dependence of the model on the diffusion mechanism of the implanted ions in the substrate; Comparison between simulated and preliminary experimental implantation profiles.

Investigates the dependence of the magnetization on the applied magnetic field direction at 5 K on superconducting thin films of YBa[sub2]Cu[sub3]O[sub7] prepared by ArF laser ablation; Maximum of the magnetization obtained when the magnetic field is applied perpendicular to the film plane.

Studies the characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al[sub 2]O[sub 3] or AlGaO[sub 3] buffer layer. Onset of superconductivity; Zero resistance observed at 80 K.

Studies correlation of light-induced changes with hydrogen content in hydrogenated amorphous silicon films. Elimination of some of the interfering factors contributing to the light-induced effect.

Studies crack formation in epitaxial [110] thin films of YBa[sub2]Cu[sub3]O[sub7gamma] and PrBa[sub2]Cu[sub3])[sub7x] on [110]SrTiO[sub3] substrates. Lattice parameters and orientation; Crack spacings along the [001] direction as a function of deposition temperature and film thickness; Characterization of typical microstructures of the film.

Studies proton radiation effects in microwave cavities and ring resonators fabricated from YBa[sub 2]Cu[sub 3]O[sub 7-delta] thin films. Decrease in the superconducting transition temperature with fluence caused by exposure to protons.

Reports that field-effect transistors have been prepared using thin films of alkyl substituted oligothiophenes. Increase in the source-drain channel current caused by the compounds; Fabrication of the field-effect transistors by a single routine process of casting or evaporation.

A high speed efficient broadband photodetector based on a vertical n-MoS2/p-porous silicon heterostructure has been demonstrated. Large area MoS2 on electrochemical etched porous silicon was grown by sulphurization of a sputtered MoO3 thin film. A maximum responsivity of 9A/W (550–850 nm) with a very high detectivity of ~1014 Jones is observed. Transient measurements show a fast response time of ~9 μs and is competent to work at high frequencies (~50kHz). The enhanced photodetection performance of the heterojunction made on porous silicon over that made on planar silicon is explained in terms of higher interfacial barrier height, superior light trapping property, and larger junction area in the MoS2/porous silicon junction. [ABSTRACT FROM AUTHOR]

The performance of thin-film GaN Schottky diodes fabricated using a large-area epitaxial lift-off (ELO) process is reported in this work. Comparison of the device characteristics before and after lift-off processing reveals that the Schottky barrier height remains unchanged by the liftoff processing and is consistent with expectations based on metal-semiconductor work function differences, with a barrier height of approximately 1 eV obtained for Ni/Au contacts on n- GaN. However, the leakage current in both reverse and low-forward-bias regimes is found to improve significantly after ELO processing. Likewise, the ideality factor of the Schottky diodes also improves after ELO processing, decreasing from n = 1.12-1.18 before ELO to n = 1.04-1.10 after ELO. A possible explanation for the performance improvement obtained for Schottky diodes after substrate removal by ELO processing is the elimination of leakage paths consisting of vertical leakage along threading dislocations coupled with lateral conduction through the underlying n+ buffer layer that is removed in the ELO process. Epitaxial liftoff with GaN may enable significant improvement in device performance and economics for GaN-based electronics and optoelectronics. [ABSTRACT FROM AUTHOR]

Examines the link between the water blocking effect and the point defect in electron cyclotron resonance plasma chemical vapor deposition silica films. Detection of the electron spin resonance signal; Water trapping ability of the silicon dangling bonds; Implications for hot-carrier degradation prevention in devices.

Examines the photoconductive properties of fullerene (C[sub 60]) thin films sandwiched with metal electrodes. Detection of fcc symmetry in C[sub 60] film from x-ray diffraction; Generation of photocurrents from type B cell illumination; Comparison of the effectiveness of illuminating in front and at the back of an aluminum electrode of a type B cell.

We have fabricated a-SiOx:H/a-Si:H/nc-Si:H/nc-Si:H quadruple-junction thin-film silicon-based solar cells (4J TFSSCs) to obtain high spectral utilization and high voltages. By processing the solar cells on micro-textured superstrates, extremely high open-circuit voltages for photovoltaic technology based on thin-film silicon alloys up to 2.91 V have been achieved. Optical simulations of quadruple-junction solar cells using an advanced in-house model are a crucial tool to effectively tackle the challenging task of current matching among the individual sub-cells in such devices. After optimizing the optical design of the device and the absorber thicknesses, an energy conversion efficiency of 11.4% has been achieved. The open-circuit voltage, short-circuit current density, and fill factor were 2.82 V, 5.49mA/cm², and 73.9%, respectively. Based on this demonstration, strategies for further development of highly efficient 4J TFSSCs are proposed. [ABSTRACT FROM AUTHOR]

In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents jph being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at jph ≠ 0) charge-carrier diffusion length ld eff as a function of jph for jph → 0 inferred from our experimental data proved to be consistent with the behavior of ld eff vs jph as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe. [ABSTRACT FROM AUTHOR]

In situ synchrotron x-ray techniques were used to investigate oxygen surface exchange behavior in thin film La0.6Sr0.4Co0.2Fe0.8O3-δ (LSCF)/Gd2O3-doped CeO2/Y2O3-stabilized ZrO2 heterostructures. Applying electrical potentials across the heterostructures results in significant expansion or contraction of the out-of-plane LSCF lattice parameter, indicating changes in the LSCF oxygen vacancy concentration. Oxygen transport across the LSCF/atmosphere interface is found to be rate limiting under both cathodic and anodic conditions. [ABSTRACT FROM AUTHOR]

We have demonstrated the fabrication and application of a nonvolatile thin-film transistor memory with SiNx charge traps using a ZnO thin film as the active channel layer. The thin film of ZnO was deposited using an atomic-layer deposition process and was subsequently post-annealed in an O2-filled atmosphere. X-ray diffraction and x-ray photoemission results indicated that the O2 annealing process was effective for the crystallinity and stoichiometry of the ZnO films. A saturation field-effect mobility of 6 cm2/Vs, on/off ratio of ≈105, subthreshold slope of 0.7 V/decade, and threshold voltage of -5 V were obtained in transistor operations. Threshold-voltage shift measurements performed for various stress voltages and time durations revealed that these devices had a large memory window of 5.4 V and a long retention time (>10 years) in nonvolatile memory operations. [ABSTRACT FROM AUTHOR]

We report a dramatic change in effective three-photon absorption coefficient of amorphous Ge16As29Se55 thin films, when its optical band gap decreases by 10 meV with 532 nm light illumination. This large change provides valuable information on the higher excited states, which are otherwise inaccessible via normal optical absorption. The results also indicate that photodarkening in chalcogenide glasses can serve as an effective tool to tune the multiphoton absorption in a rather simple way. [ABSTRACT FROM AUTHOR]

We report on measurements of variation in metal-insulator transition characteristics through thickness in VO2 film grown on model SiO2 gate insulator by nanometric scale controlled etching followed by electrical and compositional measurements. The phase transition magnitude defined as ratio of resistivity at 25 °C to that at 100 °C of VO2 decreases from ∼159 at the surface to ∼14 at ∼10 nm away from a VO2/SiO2 interface, showing a difference of >10 times, while that for a VO2 thin film grown with identical conditions on single crystal sapphire only shows ∼3 times difference. The off-stoichiometric composition near the VO2/SiO2 interface induced by unoriented growth on amorphous SiO2 is likely responsible for the dramatic change in transition characteristics. [ABSTRACT FROM AUTHOR]

The surface of the ZnO thin films was modified by a thin InSb layer by using a thermal evaporator to increase the work function without altering the physical properties of the film. We expected that the InSb thin layer with a high work function could achieve the Ohmic contact between the ZnO and Pt electrodes by reducing an energy barrier due to increase in the ZnO thin film. The Ohmic contact was achieved in the interface between the ZnO and Pt electrodes by the InSb thin layer. [ABSTRACT FROM AUTHOR]

The switching behavior of exciton absorption and photoluminescence is systematically explored in hybrid inorganic-organic multiple quantum well structures, based on (C12H25NH3)2PbI4 thin films and single crystals. Two structural phases found between 15 and 75 °C, based on orthorhombic and monoclinic unit cells, show different optical excitons which are demonstrated to arise from the reversible crumpling of the quantum well layers. Structural flips can be controlled by annealing or film thickness, with different thermal hysteresis behavior observed for single crystals and thin films. [ABSTRACT FROM AUTHOR]

High quality epitaxial undoped vanadium oxide (VO2) thin films on c-plane sapphire (0001) substrate have been grown using pulsed laser deposition technique. The as-grown films exhibited excellent structural and transport properties without requiring further annealing treatments for these oxygen-deficient oxide films. The epitaxial growth has been achieved via domain matching epitaxy, where matching of integral multiples of planes occurs across the film-substrate interface. The magnetic properties of vanadium oxide (VO2) films investigated at different temperatures in the range of 10–360 K showed significant magnetic hysteresis as well as saturation of the magnetic moment. The origin of ferromagnetic properties with an estimated Curie temperature above 500 K is discussed in the absence of magnetic impurities in VO2 thin films as determined by x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. [ABSTRACT FROM AUTHOR]

In this letter, the observation of surface plasmon coupled directional chemiluminescence (SPCC) from zinc thin films is reported. Fresnel calculations predict that light in the ultraviolet and visible spectral range can induce surface plasmon modes in 30 nm zinc thin films. Free-space emission from blue and green chemiluminescent solutions on zinc thin films was isotropic, and the SPCC emission was highly directional and p-polarized in accordance with the Fresnel calculations. In addition, the decay rates of the free-space and SPCC emission were similar, which suggests that zinc thin films have no catalytic effect on chemiluminescence. [ABSTRACT FROM AUTHOR]

It has been demonstrated that the crystallization behaviors of undoped and N-doped Ge2Sb2Te5 (GST) films can be evaluated by studying the thermomechanical behavior of the films. The crystallization temperatures (Tc) for undoped and 15 at. % N-doped GST films were determined to be about 150 and 250 °C, respectively. The activation energies for crystallization (Ea) were calculated to be 2.30, 3.29, and 3.72 eV for undoped, 10 at. % N-doped, and 15 at. % N-doped GST, respectively, by the Kissinger plot. For 15 at. % N-doped film, both the glass transition temperature (Tg) and Tc were determined to be about 150 °C, as determined by the thermomechanical characteristics. [ABSTRACT FROM AUTHOR]

An ion approach is demonstrated to determine energy resolution in both semiconductor detectors and scintillators over a continuous energy range. For semiconductors, the energy resolution of a silicon detector was measured as a function of helium ion energy, and the values from extrapolation to high energies are in good agreement with the literature data from alpha measurements. For scintillators, benchmark crystals subject to He+ irradiation were investigated, and the agreement of energy resolution between the ion and gamma measurements indicates that the ion approach can be used to predict the energy resolution of the candidate materials in thin-film form or small crystals when large crystals necessary for gamma-ray measurements are unavailable. [ABSTRACT FROM AUTHOR]

Lifetimes of ortho-positronium in mesoporous silica films were measured before and after surface trimethylsilylation of –OH groups. Variations of positronium lifetimes in the mesopores upon the surface modification indicate that the interaction between positronium and the pore surface is weakened in the pores, whose surface is covered with –CH3 groups, in comparison with those covered with –OH groups. This is consistent with the authors’ previous observation that positronium slowing down is less efficient in the pores covered with –CH3 groups. The present work demonstrates that in the porosimetric application of positron annihilation lifetime spectroscopy, the interaction between positronium and the pore surface has to be properly taken into consideration. [ABSTRACT FROM AUTHOR]

In this letter, the authors report a dye-sensitized solar cell (DSSC) using a ZnO-nanoflower film photoanode, which was grown by a hydrothermal method at 95 °C. The dye used was cis-bis(isothiocyanato)bis(2,2′-bipyridyl-4,4′-dicarboxylato)-ruthenium(II) bis-tetrabutylam-monium (N-719). At AM1.5G irradiation with 100 mW/cm2 light intensity, the DSSC based on ZnO-nanoflower film showed an energy conversion efficiency of 1.9%, which is much higher compared to that (1.0%) of the control device constructed using a photoanode of upstanding ZnO-nanorod array fabricated by hydrothermal method as well. The better performance of ZnO-nanoflower DSSC was due to a better dye loading and light harvesting of the ZnO-nanoflower film. The results demonstrate potential application of ZnO-nanoflower array for efficient dye-sensitized solar cells. [ABSTRACT FROM AUTHOR]

In this study, the application of synchrotron radiation microprobe to the analysis of Co incorporation in Zn1-xCoxO is reported. From the Co and Zn fluorescence line intensity ratio, the Co concentrations were deduced. A combination of fluorescence mapping with x-ray absorption spectroscopic techniques made possible to examine not only the uniform elemental distribution but also the short range structural order with the Co content. In Zn1-xCoxO films grown by pulsed laser depositions the Co atoms are in tetrahedral site configuration, corresponding to a substitutional site in wurtzite structure. Within the experimental accuracy, no significant bond length deviation from the pure ZnO structure was observed in the considered compositional range. [ABSTRACT FROM AUTHOR]

A transparent luminescent film of uniform nanocrystals, which could absorb UV light and downconvert it to visible light, was prepared by coating approach. Application of the as-prepared film in dye-sensitized solar cells was investigated. Comparing with the uncoated solar cell, the introduction of the Dy3+ doped LaVO4 luminescent film onto back of solar cell could greatly enhance the lifetime of the solar cell. As the downconverted light can be reabsorbed by solar cell and generate current, solar cell with luminescent film improved energy conversion efficiency by 23.3% relative to the referenced one coated with an undoped LaVO4 film. [ABSTRACT FROM AUTHOR]

Photoemission spectroscopy using synchrotron radiation was used to determine the band offsets, as a function of depth, of ultrathin (3.5 nm) Hf-silicate grown by chemical vapor deposition onto SiO2/Si and nitrided at 750 and 700 °C using NH3. In agreement with recent studies on the nitridation of oxides, the nitridation raises the valence-band (VB) maximum by adding N 2p states in the band gap. VB offsets of 1.6–1.9 eV are measured after nitridation. Final state screening in the gate oxide and band-bending at the SiO2/Si interface must be included in order to deduce accurate band offsets. [ABSTRACT FROM AUTHOR]

Transporting metallic ions from the magnetron cathode to the substrate is essential for an efficient thin-film deposition process. This letter examines how inductively coupled plasma superimposed onto a high-power pulsed magnetron discharge can influence the mobility of titanium ions. To this effect, time-resolved optical emission and absorption spectrometry are conducted and the current at the substrate is measured. With this new hybrid technique, ions are found to reach the substrate in two successive waves. Metal ions, only present in the second wave, are found to accelerate proportionally to the power supplied to the inductively coupled plasma. All the measurements in this study are made at 10 and 30 mTorr, with 10 μs long pulses at the magnetron cathode. [ABSTRACT FROM AUTHOR]

Develops a flow-through microwave plasma source to generate large atomic oxygen fluxes while maintaining vacuum pressures of less than .0001 Torr. Use of an oxidizing agent to improve the growth of many epitaxial thin-film oxides; Continuous and real-time detection of the atomic oxygen.

Studies a photorefractive effect in thin film polycrystalline fabricated by metalorganic chemical liquid deposition. Photorefractive diffraction efficiency; Poling phenomena and depolarization processes in the film.

Investigates the superconductivity and transport behavior of laser ablated gold-added YBa[sub 2]Cu[sub 3]O[sub 7-delta] (YBCO) thin films. Dependence of grain size on growth temperature and laser pulse energy; Details on the critical current density and transition temperature of the films; Comparison with undoped-YBCO films.

Examines the photoluminescence at 1.5 mum of erbium ions incorporated into polycrystalline yttrium fluoride, lutetium fluoride, and lanthanum fluoride thin films. Suitability of lanthanum fluoride as host for erbium; Deposition of rare-earth (RE) fluorides in smooth thin films; Evaporation of RE fluorides in molecular form from Knudsen cells.

Investigates the subpicosecond optical response of a semiconductor-metal phase transition excited by femtosecond laser pulses. Analysis on the dynamic response of the complex refractive index of vanadium oxide thin films; Information on the VO[sub 2] thin films transition phase; Effects of an ultrafast change in a complex refractive index.

Investigates the synthesis of YNi[sub 2]B[sub 2]C thin films using the magnetron sputtering technique. Crystallization of the YNi[sub 2]B[sub 2]C phase after temperature annealing in vacuum; Electric and magnetic properties of the thin films; Indications of the critical current measurement results.