Ohmic contact between ZnO and Pt by InSb layer in a ZnO Schottky diode.

The surface of the ZnO thin films was modified by a thin InSb layer by using a thermal evaporator to increase the work function without altering the physical properties of the film. We expected that the InSb thin layer with a high work function could achieve the Ohmic contact between the ZnO and Pt electrodes by reducing an energy barrier due to increase in the ZnO thin film. The Ohmic contact was achieved in the interface between the ZnO and Pt electrodes by the InSb thin layer. [ABSTRACT FROM AUTHOR]