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Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film.

Authors :
Lee, Yong Wook
Kim, Bong-Jun
Lim, Jung-Wook
Yun, Sun Jin
Choi, Sungyoul
Chae, Byung-Gyu
Kim, Gyoungock
Kim, Hyun-Tak
Source :
Applied Physics Letters; 4/21/2008, Vol. 92 Issue 16, p162903, 3p, 3 Graphs
Publication Year :
2008

Abstract

In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (VO<subscript>2</subscript>), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed of a voltage source and two-terminal VO<subscript>2</subscript> thin film device serially connected with a standard resistor. The systematic procedures where the oscillation occurred were explained based on the electrical relationship between the VO<subscript>2</subscript> device and resistor, and the generation window of the oscillation was determined. In particular, the oscillation frequency could be controlled by adjusting an external voltage and increased up to >0.5 MHz. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
92
Issue :
16
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
31896807
Full Text :
https://doi.org/10.1063/1.2911745