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Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film.
- Source :
- Applied Physics Letters; 4/21/2008, Vol. 92 Issue 16, p162903, 3p, 3 Graphs
- Publication Year :
- 2008
-
Abstract
- In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (VO<subscript>2</subscript>), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed of a voltage source and two-terminal VO<subscript>2</subscript> thin film device serially connected with a standard resistor. The systematic procedures where the oscillation occurred were explained based on the electrical relationship between the VO<subscript>2</subscript> device and resistor, and the generation window of the oscillation was determined. In particular, the oscillation frequency could be controlled by adjusting an external voltage and increased up to >0.5 MHz. [ABSTRACT FROM AUTHOR]
- Subjects :
- METAL-insulator transitions
OSCILLATIONS
THIN films
TEMPERATURE
ELECTRIC circuits
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 92
- Issue :
- 16
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 31896807
- Full Text :
- https://doi.org/10.1063/1.2911745