Investigation of crystallization behaviors of nitrogen-doped Ge2Sb2Te5 films by thermomechanical characteristics.

It has been demonstrated that the crystallization behaviors of undoped and N-doped Ge₂Sb₂Te₅ (GST) films can be evaluated by studying the thermomechanical behavior of the films. The crystallization temperatures (T_c) for undoped and 15 at. % N-doped GST films were determined to be about 150 and 250 °C, respectively. The activation energies for crystallization (E_a) were calculated to be 2.30, 3.29, and 3.72 eV for undoped, 10 at. % N-doped, and 15 at. % N-doped GST, respectively, by the Kissinger plot. For 15 at. % N-doped film, both the glass transition temperature (T_g) and T_c were determined to be about 150 °C, as determined by the thermomechanical characteristics. [ABSTRACT FROM AUTHOR]