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1. Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

Author: Finn, Robert, O'Donovan, Michael, Farrell, Patricio, Moatti, Julien, Streckenbach, Timo, Koprucki, Thomas, Schulz, Stefan, Tyndall National Institute [Cork], Weierstraß-Institut für Angewandte Analysis und Stochastik = Weierstrass Institute for Applied Analysis and Stochastics [Berlin] (WIAS), Forschungsverbund Berlin e.V. (FVB) (FVB), Reliable numerical approximations of dissipative systems (RAPSODI ), Laboratoire Paul Painlevé (LPP), Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Inria Lille - Nord Europe, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), and ANR-11-LABX-0007,CEMPI,Centre Européen pour les Mathématiques, la Physique et leurs Interactions(2011)
Subjects: [PHYS]Physics [physics]
Abstract: Aluminium gallium nitride ((Al,Ga)N) has gained significant attention in recent years due to its potential for highly efficient light emitters operating in the deep ultra-violet (UV) range (< 280 nm). However, given that current devices exhibit extremely low efficiencies, understanding the fundamental properties of (Al,Ga)N-based systems is of key importance. Here, using a multi-scale simulation framework, we study the impact of alloy disorder on carrier transport, radiative and non-radiative recombination processes in a c-plane Al 0.7 Ga 0.3 N/Al 0.8 Ga 0.2 N quantum well embedded in a p-i-n junction. Our calculations reveal that alloy fluctuations can open "percolative" pathways that promote transport for the electrons and holes into the quantum well region. Such an effect is neglected in conventional, and widely used transport simulations. Moreover, we find also that the resulting increased carrier density and alloy induced carrier localization effects significantly increase non-radiative Auger-Meitner recombination in comparison to the radiative process. Thus, to avoid such non-radiative process and potentially related material degradation, a careful design (wider well, multi quantum wells) of the active region is required to improve the efficiency of deep UV light emitters.
Published: 2023

2. Importance of satisfying thermodynamic consistency in light emitting diode simulations

Author: Farrell, Patricio, Moatti, Julien, O'Donovan, Michael, Schulz, Stefan, Koprucki, Thomas, Weierstraß-Institut für Angewandte Analysis und Stochastik = Weierstrass Institute for Applied Analysis and Stochastics [Berlin] (WIAS), Forschungsverbund Berlin e.V. (FVB) (FVB), Reliable numerical approximations of dissipative systems (RAPSODI ), Laboratoire Paul Painlevé (LPP), Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Inria Lille - Nord Europe, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), Tyndall National Institute [Cork], and ANR-11-LABX-0007,CEMPI,Centre Européen pour les Mathématiques, la Physique et leurs Interactions(2011)
Subjects: numerical simulations, [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Scharfetter-Gummel scheme, thermodynamic consistency, (In Ga)N devices
Abstract: We show the importance of using a thermodynamically consistent flux discretization when describing drift-diffusion processes within light emitting diode simulations. Using the classical Scharfetter-Gummel scheme with Fermi-Dirac statistics is an example of such an inconsistent scheme. In this case, for an (In,Ga)N multi quantum well device, the Fermi levels show steep gradients on one side of the quantum wells which are not to be expected. This result originates from neglecting diffusion enhancement associated with Fermi-Dirac statistics in the numerical flux approximation. For a thermodynamically consistent scheme, such as the SEDAN scheme, the spikes in the Fermi levels disappear. We will show that thermodynamic inconsistency has far reaching implications on the current-voltage curves and recombination rates.
Published: 2023

3. Impact of random alloy fluctuations on the carrier distribution in multi-color (In,Ga)N/GaN quantum well systems

Author: O'Donovan, Michael, Farrell, Patricio, Moatti, Julien, Streckenbach, Timo, Koprucki, Thomas, Schulz, Stefan, Tyndall National Institute [Cork], Weierstraß-Institut für Angewandte Analysis und Stochastik = Weierstrass Institute for Applied Analysis and Stochastics [Berlin] (WIAS), Forschungsverbund Berlin e.V. (FVB) (FVB), Reliable numerical approximations of dissipative systems (RAPSODI ), Laboratoire Paul Painlevé (LPP), Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Inria Lille - Nord Europe, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), and ANR-11-LABX-0007,CEMPI,Centre Européen pour les Mathématiques, la Physique et leurs Interactions(2011)
Subjects: [PHYS.PHYS.PHYS-COMP-PH]Physics [physics]/Physics [physics]/Computational Physics [physics.comp-ph], Condensed Matter - Mesoscale and Nanoscale Physics, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), FOS: Physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Abstract: In this work, we study the impact that random alloy fluctuations have on the distribution of electrons and holes across the active region of a (In,Ga)N/GaN multi-quantum well based light emitting diode (LED). To do so, an atomistic tight-binding model is employed to account for alloy fluctuations on a microscopic level and the resulting tight-binding energy landscape forms input to a drift-diffusion model. Here, quantum corrections are introduced via localization landscape theory and we show that when neglecting alloy disorder our theoretical framework yields results similar to commercial software packages that employ a self-consistent Schroedinger-Poisson-drift-diffusion solver. Similar to experimental studies in the literature, we have focused on a multi-quantum well system where two of the three wells have the same In content while the third well differs in In content. By changing the order of wells in this multicolor quantum well structure and looking at the relative radiative recombination rates of the different emitted wavelengths, we (i) gain insight into the distribution of carriers in such a system and (ii) can compare our findings to trends observed in experiment. Our results indicate that the distribution of carriers depends significantly on the treatment of the quantum well microstructure. When including random alloy fluctuations and quantum corrections in the simulations, the calculated trends in the relative radiative recombination rates as a function of the well ordering are consistent with previous experimental studies. The results from the widely employed virtual crystal approximation contradict the experimental data. Overall, our work highlights the importance of a careful and detailed theoretical description of the carrier transport in an (In,Ga)N/GaN multi-quantum well system to ultimately guide the design of the active region of III-N-based LED structures., 12 pages, 6 figures
Published: 2022

4. A Conformal, Dynamic Pattern-Reconfigurable Antenna Using Conductive Textile-Polymer Composite

Author: Ronan Sauleau, Sujan Shrestha, Bahare Mohamadzade, Maxim Zhadobov, Reza Gharaei, Ali Lalbakhsh, Raheel M. Hashmi, Roy B. V. B. Simorangkir, Macquarie University [Sydney], Tyndall National Institute [Cork], Islamic Azad University, Institut d'Électronique et des Technologies du numéRique (IETR), Université de Nantes (UN)-Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), No funding, Nantes Université (NU)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), and Université de Nantes (UN)-Université de Rennes 1 (UR1)
Subjects: Materials science, Fabrics, polymer, Conformal antenna, conformal antenna, 02 engineering and technology, PIN photodiodes, Radiation pattern, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, Planar, law, Radio frequency, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Reconfigurable antenna, business.industry, 020208 electrical & electronic engineering, Reconfigurability, 020206 networking & telecommunications, Antenna radiation patterns, [SPI.TRON]Engineering Sciences [physics]/Electronics, Pattern reconfigurable antenna, Conductive textile, Slot antennas, Optoelectronics, Antennas, pattern reconfigurable antenna, Antenna (radio), business, Switches
Abstract: A conformal antenna with electronically tuning capability of its radiation pattern between broadside and monopole-like patterns is proposed. The antenna is based on a proximity-fed circular patch, loaded with a ring patch and four rectangular slots. The design is planar without any use of rigid shorting posts or a complex feeding network. The reconfigurability is achieved by activating and deactivating the slots using p-i-n diodes to switch between TM02 (monopole-like mode) and perturbed TM02 distributions (broadside mode) of the antenna. For conformability, the antenna is fabricated using a highly flexible PDMS-conductive fabric composite. All the antenna parts, including the RF switches, wires, and dc biasing circuit, are fully encapsulated by PDMS to provide resilience against deformation and harsh environment. Investigations on the RF performance and mechanical stability of the antenna were conducted. Under various bendings, it was demonstrated that all the antenna components, including those for electronic switching, remained intact and in working order even under the radius bending of 40 mm, thus maintaining good pattern reconfigurability and overall performance. When bent, the measured results at 5.2 GHz show a stable radiation performance relative to those of the flat case (i.e., the maximum gain of 2.9 dBi and the efficiency of 64% in the broadside mode, corresponding to 1.75 dBi and 52% in the monopole-like mode). To the best of our knowledge, all these features have never been demonstrated in previously published pattern reconfigurable antennas.
Published: 2021

5. Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection

Author: Mickael Martin, Farzan Gity, J. Moeyaert, Bérangère Hyot, Thierry Baron, Paul K. Hurley, Shubhadeep Bhattacharjee, Hanako Okuno, Denis Rouchon, Pauline Hauchecorne, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Tyndall National Institute [Cork], Laboratoire d'Etude des Matériaux par Microscopie Avancée (LEMMA ), Modélisation et Exploration des Matériaux (MEM), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Département Plate-Forme Technologique (DPFT), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Grenoble Alpes (UGA), IBM Zurich Research Laboratory, and IBM
Subjects: gallium, [PHYS]Physics [physics], Materials science, Silicon, business.industry, Gallium selenide, GaSe, chemistry.chemical_element, 02 engineering and technology, Photodetection, selenide, VLS growth, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, chemistry, MOCVD, photodetectors, Optoelectronics, General Materials Science, 3D materials, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; Layered semiconductor gallium selenide (GaSe) is considered a potential candidate for optoelectronic applications because of its direct band gap. Monocrystalline material is, however, a prerequisite to fully exploit these properties in devices, where one-dimensional nano-objects could be considered as a model system. As a consequence of their large surface-to-volume ratio, nano-objects such as nanoribbons are interesting for photodetection applications. Here, we report the vapor–liquid–solid growth of GaSe nanoribbons by MOCVD on 300 mm silicon substrates. A growth model is proposed on the basis of a comprehensive study of the impact of the growth parameters on the nanoribbon morphology. The nanoribbon microstructure is investigated by HR-STEM and Raman spectroscopy characterizations. HR-STEM and TEM cross-sectional observations coupled with EDX analyses reveal a monocrystalline nanoribbon core covered with a native gallium-oxide shell. Test devices are made by contacting individual nanoribbon. The current versus voltage (I–V) characteristic obtained over a range of temperature (−50 to 100 °C) in the dark and under white light illumination is fitted on the basis of a back-to-back Schottky diode model. A stable and repeatable dynamic photoresponse is measured from the GaSe nanoribbons, with an ION/IOFF ratio of 17 at room temperature.
Published: 2021

6. NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

Author: F. Balestra, Enrico Sangiorgi, Didier Belot, Giorgos Fagas, Danilo Demarchi, R. M. Popp, M. Pfeffer, Anda Mocuta, Jouni Ahopelto, L. Baldi, Gustavo Ardila, Adrian M. Ionescu, D. Holden, C. M. Sotomayor Torres, Gaudenzio Meneghesso, Montserrat Fernandez-Bolanos, S. De Gendt, European Commission, VTT Technical Research Centre of Finland (VTT), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Tyndall National Institute [Cork], IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Politecnico di Torino = Polytechnic of Turin (Polito), Ecole Polytechnique Fédérale de Lausanne (EPFL), Università degli Studi di Padova = University of Padua (Unipd), Fraunhofer Institute for Applied Information Technology (Fraunhofer FIT), Fraunhofer (Fraunhofer-Gesellschaft), Alma Mater Studiorum Università di Bologna [Bologna] (UNIBO), Institut Català de Nanociència i Nanotecnologia (ICN2), Universitat Autònoma de Barcelona (UAB), Institució Catalana de Recerca i Estudis Avançats (ICREA), European Project: 685559,H2020,H2020-ICT-2015,NEREID(2015), Université de Padoue, Politecnico di Torino [Torino] (Polito), Department of Information Engineering [Padova] (DEI), Universita degli Studi di Padova, Institute of Materials Engineering, Bergische Universität Wuppertal, and Publica
Subjects: Engineering, LETI, System design, Design-technology gap, Automotive industry, 02 engineering and technology, Grenoble INP, Novel materials, 01 natural sciences, 7. Clean energy, Milano, Grenoble, [SPI]Engineering Sciences [physics], Beyond CMOS, ardilarg@minatecinpgfr L Baldi, Belgium, Materials Chemistry, More Moore, ComputingMilieux_MISCELLANEOUS, Finland, technologies, 010302 applied physics, spintronics, Leuven, ta213, Heterogeneous integration, Tyndall, OtaNano, 021001 nanoscience & nanotechnology, Condensed Matter Physics, balestraf@minatecinpgfr, Electronic, Optical and Magnetic Materials, D Belot, Identification (information), Equipments and manufacturing, More than Moore, Nanoelectronics, Roadmap, F Balestra, Italy, Systems engineering, System integration, baldilivio@gmailcom, Consultant, France, 0210 nano-technology, Cork, IMEC, CNRS, Diversification (marketing strategy), 0103 physical sciences, DidierBELOT@ceafr G Fagas, georgiosfagas@tyndallie S De Gendt, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ta216, Ste- fanDeGendt@imecbe Keywords: Nanoelectronics, ta114, 9. Industry and infrastructure, business.industry, JouniAhopelto@vttfi G Ardila, IMEP- LaHC, U Grenoble Alpes, Systems design, Digital manufacturing, business, Ireland
Abstract: The NEREID project (“NanoElectronics Roadmap for Europe: Identification and Dissemination”) is dedicated to mapping the future of European Nanoelectronics. NEREID’s objective is to develop a medium and long term roadmap for the European nanoelectronics industry, starting from the needs of applications to address societal challenges and leveraging the strengths of the European eco-system. The roadmap will also identify promising novel nanoelectronic technologies, based on the advanced concepts developed by Research Centres and Universities, as well as identification of potential bottlenecks along the innovation (value) chain. Industry applications include Energy, Automotive, Medical/Life Science, Security, loT, Mobile Convergence and Digital Manufacturing. The NEREID roadmap covers Advanced Logic and Connectivity, Functional Diversification (Smart Sensors, Smart Energy and Energy for Autonomous Systems), Beyond-CMOS, Heterogeneous Integration and System Design as well as Equipment, Materials and Manufacturing Science. This article gives an overview of the roadmap’s structure and content., Thanks are extended to the support of the EU, which has been funded the NEREID project as a Cooperation and Support action for three years from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 685559.
Published: 2019

7. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors

Author: Enrico Napolitani, Ray Duffy, Fuccio Cristiano, HAL-LAAS, LAAS, Tyndall National Institute [Cork], Universita degli Studi di Padova, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Università degli Studi di Padova = University of Padua (Unipd), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: 010302 applied physics, Fabrication, Recrystallization (geology), Materials science, Dopant, Annealing (metallurgy), business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Doping, 02 engineering and technology, Dopant Activation, 021001 nanoscience & nanotechnology, 01 natural sciences, [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Amorphous solid, Semiconductor, 0103 physical sciences, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS
Abstract: This chapter presents a review of the most relevant experimental results demonstrating the ability of nanosecond laser annealing to achieve dopant activation well above the solid solubility limit. Several distinctive materials science issues related to laser kinetics in the melt regime are reviewed, including melt temperature differences between amorphous and crystalline phases, melt front propagation, melt duration, recrystallization velocity, and solute trapping. Finally, the morphology, crystalline nature, and residual damage of Si, Ge, and SiGe materials submitted to nanosecond laser anneals in the melt regime are discussed according to the material fabrication history as well as the laser anneal conditions. Due to the richness and relevance of numerous seminal works published in the late 1970s–the early 1980s in this domain, the results reported in this chapter are mainly presented in the form of a historical review and perspective. In particular, the concepts of above-equilibrium solubility and thermal stability are first discussed in general for Si and Ge, while for both materials, the main results are structured in terms of Group III elements (p-type dopants) and Group V elements (n-type dopants). Group VI elements for n-type doping of Si are also considered.
Published: 2021

8. Fabrication and electrochemical properties of three-dimensional (3D) porous graphitic and graphenelike electrodes obtained by low-cost direct laser writing methods

Author: George Paterakis, Costas Galiotis, Cathal Larrigy, Daniela Iacopino, Labrini Sygellou, Aidan J. Quinn, Micheal Burke, Grégoire Herzog, Eoghan Vaughan, Tyndall National Institute [Cork], Foundation for Research and Technology - Hellas (FORTH), Laboratoire de Chimie Physique et Microbiologie pour les Matériaux et l'Environnement (LCPME), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), University of Patras [Patras], Science Foundation Ireland(SFI) under grant number SFI 16/RC/3918 (CONFIRM),13/RC/2077 (CONNECT) and SFI TIDA 5118, cofunded bythe European Regional Development Fund., European Project: 814496,APACHE(2019), and University of Patras
Subjects: Fabrication, Materials science, Direct laser writing, General Chemical Engineering, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Article, law.invention, Chemical structure, law, Electrochemical sensors, QD1-999, Electrodes, business.industry, Laser engraving, Graphene, Lasers, Polyimides, Laser induced graphene, [CHIM.MATE]Chemical Sciences/Material chemistry, General Chemistry, 021001 nanoscience & nanotechnology, Laser, Carbon, 0104 chemical sciences, Kapton, Electrochemical gas sensor, Dwell time, Chemistry, Electrode, Optoelectronics, 0210 nano-technology, business, Graphitic electrodes
Abstract: International audience; The development of three-dimensional (3D) porous graphitic structures is of great interest for electrochemical sensing applications as they can support fast charge transfer and mass transport through their extended, large surface area networks. In this work, we present the facile fabrication of conductive and porous graphitic electrodes by direct laser writing techniques. Irradiation of commercial polyimide sheets (Kapton tape) was performed using a low-cost laser engraving machine with visible excitation wavelength (405 nm) at low power (500 mW), leading to formation of 3D laser-induced graphene (LIG) structures. Systematic correlation between applied laser dwell time per pixel ("dwell time") and morphological/structural properties of fabricated electrodes showed that conductive and highly 3D porous structures with spectral signatures of nanocrystalline graphitic carbon materials were obtained at laser dwell times between 20 and 110 ms/pix, with graphenelike carbon produced at 50 ms/pix dwell time, with comparable properties to LIG obtained with high cost CO 2 lasers. Electrochemical characterization with inner and outer sphere mediators showed fast electron transfer rates, comparable to previously reported 2D/3D graphene-based materials and other graphitic carbon electrodes. This work opens the way to the facile fabrication of low-cost, disposable electrochemical sensor platforms for decentralized assays.
Published: 2020

9. Energy Autonomous Wearable Sensors for Smart Healthcare: A Review

Author: Alain Lacampagne, J. Boudaden, Umair Gulzar, Colm O'Dwyer, Benoit Charlot, Yan Zhang, Jonas Tilly, Shane Geary, Thierry Gil, Fredrik Sebelius, Colm Glynn, Kafil M. Razeeb, Nadine Azemard, Abhishek Singh Dahiya, Peter Ramm, Jérôme Thireau, Aida Todri-Sanial, Tim Kiessling, Swatchith Lal, Cian O'Murchu, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Physiologie & médecine expérimentale du Cœur et des Muscles [U 1046] (PhyMedExp), Université de Montpellier (UM)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Fraunhofer Institute for Reliability and Microintegration (Fraunhofer IZM), Fraunhofer (Fraunhofer-Gesellschaft), Tyndall National Institute [Cork], United College Cork (National University of Ireland) (UCC), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Smart Integrated Electronic Systems (SmartIES), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Novosense AB [Lund], Analog Devices, Inc. [Norwood] (ADI), University College Cork (UCC), European Project: 825114,SmartVista, Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Fraunhofer Institut für Zuverlässigkeit und Mikrointegration (Fraunhofer IZM), Fraunhofer-Gesellschaft, and European Project: SmartVista
Subjects: Signal Processing (eess.SP), FOS: Computer and information sciences, Computer science, Wearable, smart wearable for health monitoring, 020209 energy, Computer Science - Human-Computer Interaction, Wearable computer, 02 engineering and technology, Transduction (psychology), Energy storage, Human-Computer Interaction (cs.HC), Software, Health care, FOS: Electrical engineering, electronic engineering, information engineering, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, Electrochemistry, [INFO.INFO-DL]Computer Science [cs]/Digital Libraries [cs.DL], Electronics, Electrical Engineering and Systems Science - Signal Processing, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, Renewable Energy, Sustainability and the Environment, business.industry, Sensors, Condensed Matter Physics, Internet-of-Medical-Things, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Internet of Things (IoT), Systems engineering, Autonomous sensors, business, Energy harvesting, Energy (signal processing)
Abstract: Energy Autonomous Wearable Sensors (EAWS) have attracted a large interest due to their potential to provide reliable measurements and continuous bioelectric signals, which help to reduce health risk factors early on, ongoing assessment for disease prevention, and maintaining optimum, lifelong health quality. This review paper presents recent developments and state-of-the-art research related to three critical elements that enable an EAWS. The first element is wearable sensors, which monitor human body physiological signals and activities. Emphasis is given on explaining different types of transduction mechanisms presented, and emerging materials and fabrication techniques. The second element is the flexible and wearable energy storage device to drive low-power electronics and the software needed for automatic detection of unstable physiological parameters. The third is the flexible and stretchable energy harvesting module to recharge batteries for continuous operation of wearable sensors. We conclude by discussing some of the technical challenges in realizing energy-autonomous wearable sensing technologies and possible solutions for overcoming them.
Published: 2020

10. SARMENTI: in-situ real-time soil nutrients and gaseous emission measurement

Author: G. Mouzakitis, G. Ponsardin, V. Di Palma, G. Mailat, Titus Balan, B. Molleman, Gabriela Dudnik, A. Di Matteo, Suzanne Lesecq, K. Daly, Han Shao, M. Gougis, C. Dimitru, Enrico Alessi, M. Correvon, E. Gouze, S. di Salvo, Alan O'Riordan, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics, Tyndall National Institute [Cork], Terrasolis, Centre Suisse d'Electronique et Microtechnique SA (CSEM), Teagasc - The Agriculture and Food Development Authority (Teagasc), and European Project: 825325,SARMENTI - H2020-EU.2.1.1.
Subjects: In situ, Soil nutrients, in situ monitoring, business.industry, Node (networking), gaseous emission, 02 engineering and technology, Agricultural engineering, 010402 general chemistry, 021001 nanoscience & nanotechnology, sensors, 01 natural sciences, 0104 chemical sciences, [SPI.TRON]Engineering Sciences [physics]/Electronics, agriculture 4.0, Environmental science, soil nutrients, 0210 nano-technology, Internet of Things, business
Abstract: International audience; This paper presents the vision of the H2020 EU project SARMENTI whose objective is to develop an IoT device that monitors in real-time and in situ nutrients in the soil and gaseous emissions just above the soil, and provide advices to the farmer regarding appropriate fertilization strategies. The development methodology is presented here, the measurement requirements being established with end-users. Then the device architecture is summarized.
Published: 2020
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11. SmartVista: Smart Autonomous Multi Modal Sensors for Vital Signs Monitoring

Author: Dahiya, Abhishek Singh, Charlot, Benoît, Dhifallah, Marwa, Gil, Thierry, Azemard, Nadine, Lacampagne, Alain, Boudaden, Jamila, Ramm, Peter, Kiessling, Tim, Klumpp, Armin, Lal, Swatchith, O'Murchu, Cian, Razeeb, Kafil M., Gulzar, Umair, Zhang, Yan, O'Dwyer, Colm, Sebelius, Fredrik, Tilly, Jonas, Glynn, Colm, Geary, Shane, Todri-Sanial, Aida, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Smart Integrated Electronic Systems (SmartIES), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Physiologie & médecine expérimentale du Cœur et des Muscles [U 1046] (PhyMedExp), Université de Montpellier (UM)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), Fraunhofer Institute for Reliability and Microintegration (Fraunhofer IZM), Fraunhofer (Fraunhofer-Gesellschaft), Tyndall National Institute [Cork], University College Cork (UCC), Novosense AB [Lund], Analog Devices, Inc. [Norwood] (ADI), European Project: 825114,SmartVista, Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SDV]Life Sciences [q-bio], [INFO.INFO-DL]Computer Science [cs]/Digital Libraries [cs.DL], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Smart wearable for health monitoring
Abstract: International audience; The SmartVista is dedicated to develop a personalized self-powered smart multi-modal vital sign monitoring wearable patch that is seamlessly integrated with the skin with multi-fold increased sensor accuracy. We are investigating one- and two-dimensional (1D/2D) nanomaterials, including carbon nanotubes (CNTs), silver nanowires (Ag NWs), and molybdenum disulfide (MoS2) sheets, to develop ultra-sensitive and highly-stretchable skin-like biosensors used for the monitoring of health-related physiological body signals. Both theoretical and experimental studies are on-going for the optimization of sensor’s design and performance. Furthermore, to ensure autonomy of the smart sensor, 3D printable battery powered by energy harvesting module is integrated on a single flexible device platform. For energy harvesting, thermoelectric generator (TEG) modules are being developed to harvest power from the body heat and temperature gradient. The entire system will be powered by a 3D printed battery, which reduces the battery form factor significantly and allows for drastic system miniaturization that is crucial for wearables. The present wearable and implantable autonomous sensing device has significant potential to be employed for doctor – patient mobile health monitoring system.
Published: 2019

12. Cu Nanodendrite Foams on Integrated Band Array Electrodes for the Nonenzymatic Detection of Glucose

Author: Vuslat B. Juska, Alain Walcarius, Martyn E. Pemble, Tyndall National Institute [Cork], Laboratoire de Chimie Physique et Microbiologie pour les Matériaux et l'Environnement (LCPME), and Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, copper nanodendrites, Nanotechnology, 02 engineering and technology, [CHIM.MATE]Chemical Sciences/Material chemistry, 010402 general chemistry, 021001 nanoscience & nanotechnology, Electrocatalyst, 01 natural sciences, Copper nanodendrites, 0104 chemical sciences, band array electrode, [CHIM.ANAL]Chemical Sciences/Analytical chemistry, Nonenzymatic sensors, Electrode, Band array electrode, electrocatalysis, General Materials Science, Microfabrication, Electrocatalysis, 0210 nano-technology, microfabrication
Abstract: We demonstrate the successful electrodeposition of Cu nanodendrite foams (CuFoams) onto a series of lithographically formed gold band array electrodes at negative overpotentials in an acidic environment. The nanodendrite foams were deposited onto two different integrated microelectrode arrays fabricated using standard lithographic techniques. Each electrode consisted of 17 gold band electrodes deposited onto a silicon wafer substrate, labeled BA5 (with a width of 5 μm and a length of 250 μm) and BA10 (with a width of 10 μm and a length of 500 μm). Prior to Cu deposition the gold electrodes were characterized by scanning electron microscopy (SEM) in order to evaluate the morphology of each design and by cyclic voltammetry (CV) in order to investigate their diffusion profiles. After Cu deposition the resulting 3D foam structures were studied using SEM, XPS, and EDX. The CuFoam/Au microelectrodes were then used for the electrocatalytic detection of glucose via oxidation at a potential of +0.45 V vs Ag/AgCl in an alkaline medium. It was found that both types of electrode arrays used showed excellent analytical performance in terms of sensitivity, reproducibility, and stability in comparison with the best performances reported in the literature. In particular, the BA5-CuFoam electrode exhibited an outstanding sensitivity of 10,630 μA mM–1 cm–2 toward glucose with a wide linear range up to 22.55 mM, while the BA10-CuFoam electrode showed a sensitivity of 4,437 μA mM–1 cm–2. The performance of the proposed electrochemical sensor is attributed to a combination of the use of the very high surface area Cu nanodendrite foam and the enhanced radial distribution profile associated with the use of the smaller band microfabricated electrodes. Additionally, both sensors also showed a strong resistance to the poisoning effects of chlorine ions and excellent stability over a period of three months.
Published: 2019

13. Utiliser des drones pour recharger efficacement des capteurs

Author: Caillouet, Christelle, Razafindralambo, Tahiry, Zorbas, Dimitrios, Combinatorics, Optimization and Algorithms for Telecommunications (COATI), COMmunications, Réseaux, systèmes Embarqués et Distribués (Laboratoire I3S - COMRED), Laboratoire d'Informatique, Signaux, et Systèmes de Sophia Antipolis (I3S), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Laboratoire d'Informatique, Signaux, et Systèmes de Sophia Antipolis (I3S), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Inria Sophia Antipolis - Méditerranée (CRISAM), Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), Laboratoire d'Informatique et de Mathématiques (LIM), Université de La Réunion (UR), Tyndall National Institute [Cork], Inria Sophia Antipolis - Méditerranée (CRISAM), Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)-COMmunications, Réseaux, systèmes Embarqués et Distribués (Laboratoire I3S - COMRED), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (1965 - 2019) (UNS), and COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)
Subjects: [INFO.INFO-NI]Computer Science [cs]/Networking and Internet Architecture [cs.NI], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2019

14. Electromagnetic Tracking for Deep Liver Targets: A preliminary feasibility study

Author: Hinds, Stephen, Jaeger, Herman Alexander, Burke, Richard, O’Sullivan, Brodie, Keane, Joseph, Trauzettel, Fabian, Marques, Bruno, Cotin, Stéphane, Bird, Brian, Leira, Hakon, Langø, Thomas, Cantillon-Murphy, Pádraig, University College Cork (UCC), Sunbeam Veterinary Hospital, L'Institut hospitalo-universitaire de Strasbourg (IHU Strasbourg), Institut National de Recherche en Informatique et en Automatique (Inria)-l'Institut de Recherche contre les Cancers de l'Appareil Digestif (IRCAD)-Les Hôpitaux Universitaires de Strasbourg (HUS)-La Fédération des Crédits Mutuels Centre Est (FCMCE)-L'Association pour la Recherche contre le Cancer (ARC)-La société Karl STORZ, Computational Anatomy and Simulation for Medicine (MIMESIS), Inria Nancy - Grand Est, Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria), Bons Secours Hospital, St. Olavs Hospital HF (St. Olav's University Hospital), Stiftelsen for INdustriell og TEknisk Forskning Digital [Trondheim] (SINTEF Digital), Tyndall National Institute [Cork], Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)-Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National de Recherche en Informatique et en Automatique (Inria)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Les Hôpitaux Universitaires de Strasbourg (HUS)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et Nanosciences Grand-Est (MNGE), and Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [SPI]Engineering Sciences [physics], [INFO.INFO-IM]Computer Science [cs]/Medical Imaging, [SDV.CAN]Life Sciences [q-bio]/Cancer, [SPI.TRON]Engineering Sciences [physics]/Electronics
Abstract: International audience; Electromagnetic tracking is a core platform technology in the navigation and visualisation of image-guided procedures. The technology provides high tracking accuracy in non-line-of-sight environments, allowing instrument navigation in locations where optical tracking is not feasible. EMT can be beneficial in applications such as percutaneous radiofrequency ablation for the treatment of hepatic lesions where the needle tip may be obscured due to difficult liver environments (e.g subcutaneous fat or ablation artefacts). Advances in the field of EMT include novel methods of improving tracking system accuracy, precision and error compensation capabilities, though such system-level improvements cannot be readily incorporated in current therapy applications due to the ‘blackbox’ nature of commercial tracking solving algorithms.This paper defines a software framework to allow novel EMT designs, and improvements become part of the global design process for image-guided interventions. An exemplary framework is implemented in the Python programming language and demonstrated with the open-source Anser EMT system. The framework is applied in the preclinical setting though targeted liver ablation therapy on an animal model.The developed framework was tested with the Anser EMT electromagnetic tracking platform. Liver tumour targeting was performed using the tracking framework with the CustusX navigation platform using commercially available electromagnetically tracked needles. Ablation of two tumours was performed with a commercially available ablation system. Necropsy of the tumours indicated ablations within 5 mm of the tumours.
Published: 2019

15. Optimal placement of drones for fast sensor energy replenishment using wireless power transfer

Author: Christelle Caillouet, Tahiry Razafindralambo, Dimitrios Zorbas, Combinatorics, Optimization and Algorithms for Telecommunications (COATI), Inria Sophia Antipolis - Méditerranée (CRISAM), Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)-COMmunications, Réseaux, systèmes Embarqués et Distribués (Laboratoire I3S - COMRED), Laboratoire d'Informatique, Signaux, et Systèmes de Sophia Antipolis (I3S), Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (1965 - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Laboratoire d'Informatique, Signaux, et Systèmes de Sophia Antipolis (I3S), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Laboratoire d'Informatique et de Mathématiques (LIM), Université de La Réunion (UR), Tyndall National Institute [Cork], This publication has emanated from research conductedwith the financial support of Science Foundation Ireland (SFI)and is co-funded under the European Regional DevelopmentFund under Grant Number 13/RC/2077., ANR-11-LABX-0031,UCN@SOPHIA,Réseau orienté utilisateur(2011), European Project: 713567,H2020,H2020-MSCA-COFUND-2015,EDGE(2016), COMmunications, Réseaux, systèmes Embarqués et Distribués (Laboratoire I3S - COMRED), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Inria Sophia Antipolis - Méditerranée (CRISAM), and Institut National de Recherche en Informatique et en Automatique (Inria)-Institut National de Recherche en Informatique et en Automatique (Inria)
Subjects: Linear programming, Computer science, Real-time computing, Wireless sensors networks, 02 engineering and technology, Remotely operated underwater vehicle, 01 natural sciences, Telecommunication network planning, [INFO.INFO-NI]Computer Science [cs]/Networking and Internet Architecture [cs.NI], Optimal drone placement and planning problem, 0202 electrical engineering, electronic engineering, information engineering, Minimum energy demands, Wireless, Wireless power transfer, Fast heuristic algorithm, Radiofrequency power transmission, Drones, Flying drones, business.industry, Node (networking), Telecommunication control, 010401 analytical chemistry, 020206 networking & telecommunications, Remotely operated vehicles, OD3P, Drone, Wireless sensor networks, 0104 chemical sciences, Fast sensor energy replenishment, Radiofrequency signals, business, Node maintenance, Energy harvesting, Wireless sensor network, RF signals, Energy harvesting technologies
Abstract: Best Paper Award; International audience; Lifetime is the main issue of wireless sensors net-works. Since the nodes are often placed in inaccessible places, thereplacement of their battery is not an easy task. Moreover, thenode maintenance is a costly and time consuming operation whenthe nodes are high in numbers. Energy harvesting technologieshave recently been developed to replenish part or all of therequired energy that allows a node to function. In this paper, weuse dedicated chargers carried by drones that can fly over thenetwork and transmit energy to the nodes using radio-frequency(RF) signals. We formulate and optimally solve the OptimalDrone Placement and Planning Problem (OD3P) by using a givennumber of flying drones, in order to efficiently recharge wirelesssensor nodes. Unlike other works in the literature, we assumethat the drones can trade altitude with coverage and rechargepower, while each drone can move across different positions inthe network to extend coverage. We present a linear program aswell as a fast heuristic algorithm to meet the minimum energydemands of the nodes in the shortest possible amount of time.Our simulation results show the effectiveness of our approachesfor network scenarios with up to 50 sensors and a50×50mterrain size.
Published: 2019

16. INSPEX: Make environment perception available as a portable system

Author: Foucault, J., Lesecq, Suzanne, Debicki, O., Mareau, N., Barrett, J., Rea, S., Mcgibney, A., Birot, F., de Chaumont, H., Banach, J, Razavi, J., Herveg, J., Thiry, F., Jackson, C., Buckley, S., Di Matteo, A., Palma, V., Passoni, M., Quaglia, F., Ó'Murchú, C., O'Keeffe, R., Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département d'Architectures, Conception et Logiciels Embarqués-LIST (DACLE-LIST), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Cork Institute of Technology (CIT), GoSense, University of Manchester [Manchester], Université de Namur [Namur] (UNamur), SensL, STMicroelectronics, Tyndall National Institute [Cork], European Project: 730953,INSPEX-H2020-EU.2.1.1., and Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA))
Subjects: [SPI]Engineering Sciences [physics], [SCCO]Cognitive science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, [SPI.AUTO]Engineering Sciences [physics]/Automatic
Abstract: International audience; Obstacle avoidance systems for autonomous vehicles combine multiple sensing technologies (i.e. LiDAR, Radar, Ultrasound and Visual) to detect different types of obstacles across the full range of lighting and weather conditions. Sensor data are fused with vehicle orientation (obtained for instance from an Inertial Measurement Unit and/or compass) and navigation subsystems. Power hungry, they require powerful computational capability, which limits their use to high-end vehicles and robots. 2 INSPEX ambition The H2020 INSPEX project plans to make obstacle detection capabilities available as a personal portable multi-sensors, miniaturised, low power device. This device will detect, locate and warn of obstacles under different environmental conditions, in indoor/outdoor environments, with static and mobile obstacles. Potential applications range from safer human navigation in reduced visibility conditions (e.g. for first responders and fire brigades), small robot/drone obstacle avoidance systems to navigation for the visually and mobility impaired people. As primary demonstrator (Fig.1), we will plug the INSPEX device on a white cane (see Fig. 1) for Visually Impaired and Blind (VIB) people to detect obstacle over the whole person height, provide audio feedback about harmful obstacles, improve their mobility confidence and reduce injuries, especially at waist and head levels [1]. The device will offer a "safety cocoon" to its user.
Published: 2019

17. Strong modulations of optical reflectance in tapered core-shell nanowires

Author: Francesco Rossella, Lucia Sorba, Lucia Fornasari, Andrea Marini, Francesco Floris, Vittorio Bellani, Sergio Battiato, Daniele Ercolani, Francesco Banfi, Fabio Beltram, Franco Marabelli, Tyndall National Institute [Cork], Dipartimento di Fisica [Pavia], Università degli Studi di Pavia, Department of Physical and Chemical Sciences [L'Aquila] (DSFC), Università degli Studi dell'Aquila (UNIVAQ), FemtoNanoOptics (FemtoNanoOptics), Institut Lumière Matière [Villeurbanne] (ILM), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS), Scuola Normale Super Pisa, NEST, Pisa, Italy, Floris, F., Fornasari, L., Bellani, V., Marini, A., Banfi, F., Marabelli, F., Beltram, F., Ercolani, D., Battiato, S., Sorba, L., Rossella, F., Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), and Université de Lyon-Université de Lyon
Subjects: Core-shell, Nanowires, Numerical simulations, Optical reflectance, Semiconductors, Nanostructure, Materials science, Shell (structure), Nanowire, Physics::Optics, Tapering, 02 engineering and technology, Numerical simulation, core–shell, 01 natural sciences, lcsh:Technology, Article, Settore FIS/03 - Fisica della Materia, Condensed Matter::Materials Science, [SPI]Engineering Sciences [physics], 0103 physical sciences, [CHIM]Chemical Sciences, General Materials Science, Specular reflection, 010306 general physics, lcsh:Microscopy, lcsh:QC120-168.85, [PHYS]Physics [physics], lcsh:QH201-278.5, business.industry, lcsh:T, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, core-shell, nanowires, semiconductors, optical reflectance, numerical simulations, Core (optical fiber), Semiconductor, lcsh:TA1-2040, Optoelectronics, lcsh:Descriptive and experimental mechanics, lcsh:Electrical engineering. Electronics. Nuclear engineering, 0210 nano-technology, business, lcsh:Engineering (General). Civil engineering (General), lcsh:TK1-9971
Abstract: Random assemblies of vertically aligned core&ndash, shell GaAs&ndash, AlGaAs nanowires displayed an optical response dominated by strong oscillations of the reflected light as a function of the incident angle. In particular, angle-resolved specular reflectance measurements showed the occurrence of periodic modulations in the polarization-resolved spectra of reflected light for a surprisingly wide range of incident angles. Numerical simulations allowed for identifying the geometrical features of the core&ndash, shell nanowires leading to the observed oscillatory effects in terms of core and shell thickness as well as the tapering of the nanostructure. The present results indicate that randomly displaced ensembles of nanoscale heterostructures made of III&ndash, V semiconductors can operate as optical metamirrors, with potential for sensing applications.
Published: 2019

18. The FireFlux II experiment: a model-guided field experiment to improve understanding of fire–atmosphere interactions and fire spread

Author: Warren E. Heilman, Toussaint Barboni, Joseph J. O'Brien, Steven K. Krueger, Adam K. Kochanski, Christopher Camacho, Dianne E. Hall, Joseph C. Restaino, Mary Ann Jenkins, Neil P. Lareau, Daisuke Seto, Ben Hornsby, Jan Mandel, Casey Teske, Craig B. Clements, Jonathan Contezac, Jean Baptiste Filippi, Braniff Davis, Bret W. Butler, Roger D. Ottmar, James Flynn, Robert E. Vihnanek, Department of Meteorology and Climate Science [San José], San Jose State University [San José] (SJSU), Feux de Forêt, Sciences pour l'environnement (SPE), Centre National de la Recherche Scientifique (CNRS)-Université Pascal Paoli (UPP)-Centre National de la Recherche Scientifique (CNRS)-Université Pascal Paoli (UPP), Centre National de la Recherche Scientifique (CNRS)-Université Pascal Paoli (UPP), Feu, and Tyndall National Institute [Cork]
Subjects: 040101 forestry, Ecology, Fire regime, Meteorology, Field experiment, Poison control, Perturbation (astronomy), Forestry, 04 agricultural and veterinary sciences, Combustion, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Wind speed, Plume, law.invention, Ignition system, 13. Climate action, law, 0401 agriculture, forestry, and fisheries, Environmental science, ComputingMilieux_MISCELLANEOUS
Abstract: The FireFlux II experiment was conducted in a tall grass prairie located in south-east Texas on 30 January 2013 under a regional burn ban and high fire danger conditions. The goal of the experiment was to better understand micrometeorological aspects of fire spread. The experimental design was guided by the use of a coupled fire–atmosphere model that predicted the fire spread in advance. Preliminary results show that after ignition, a surface pressure perturbation formed and strengthened as the fire front and plume developed, causing an increase in wind velocity at the fire front. The fire-induced winds advected hot combustion gases forward and downwind of the fire front that resulted in acceleration of air through the flame front. Overall, the experiment collected a large set of micrometeorological, air chemistry and fire behaviour data that may provide a comprehensive dataset for evaluating and testing coupled fire–atmosphere model systems.
Published: 2019

19. Carrier dynamics near a crack in GaN microwires with AlGaN multiple quantum wells

Author: Pietro Pampili, Catherine Bougerol, Joël Eymery, Vitaly Z. Zubialevich, Gwénolé Jacopin, Sylvain Finot, Peter J. Parbrook, Christophe Durand, Vincent Grenier, Semi-conducteurs à large bande interdite (NEEL - SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Tyndall National Institute [Cork], Nanophysique et Semiconducteurs (NEEL - NPSC), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Semi-conducteurs à large bande interdite (SC2G), Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)
Subjects: [PHYS]Physics [physics], 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Cathodoluminescence (CL), Non-radiative recombinations, Relaxation (NMR), AIGaN, Heterojunction, Cathodoluminescence, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Molecular physics, GaN, [SPI.MAT]Engineering Sciences [physics]/Materials, Crystal, Quality (physics), Transmission electron microscopy, Free surface, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 0210 nano-technology, Intensity (heat transfer)
Abstract: International audience; Relaxation of tensile strain in AlGaN heterostructures grown on GaN template can lead to the formation ofcracks. These extended defects locally degrade the crystal quality resulting in a local increase of non-radiativerecombinations. The effect of such cracks on the optical and structural properties of core-shell AlGaN/AlGaNmultiple quantum wells grown on GaN microwires are comprehensively characterized by means of spectrallyand time-correlated cathodoluminescence (CL). We observe that the CL blueshifts near a crack. By performing6x6 k.p simulations in combination with transmission electron microscopy analysis, we ascribe this shift tothe strain relaxation by the free surface near cracks. By simultaneously recording the variations of both theCL lifetime and the CL intensity across the crack, we directly assess the carrier dynamics around the defectat T = 5 K. We observe that the CL lifetime is reduced typically from 500 ps to less than 300 ps and the CLintensity increases by about 40% near the crack. The effect of the crack on the optical properties is thereforeof two natures. First, the presence of this defect locally increases non-radiative recombinations while at thesame time, it locally improves the extraction efficiency. These findings emphasize the need for time-resolvedexperiments to avoid experimental artifacts related to local changes of light collection
Published: 2020

20. Quantum-Dash semiconductor laser characterization using continuous tuning optical swept source

Author: O. Seddiki, Kamel Merghem, Y. Gottesman, A. Ramdane, Tatiana Habruseva, Guillaume Huyet, M. Korti, Badr-Eddine Benkelfat, Svetlana Slepneva, Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Laboratoire de Télécommunications de Tlemcen (LTT), Université Aboubekr Belkaid - University of Belkaïd Abou Bekr [Tlemcen], Département Electronique et Physique (EPH), Centre National de la Recherche Scientifique (CNRS), Centre for Advanced photonics and Process Analysis (Cork Institute of Technology), Tyndall National Institute [Cork], Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] (ITMO), Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), and Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)
Subjects: Materials science, business.industry, 02 engineering and technology, Laser, Quantum-Dash semiconductor laser, 01 natural sciences, Signal, Semiconductor laser theory, Characterization (materials science), law.invention, 010309 optics, Physics::Popular Physics, 020210 optoelectronics & photonics, Semiconductor, Mode-locked, Mode-locking, Continuous tuning swept source, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, business, Quantum, Prior information
Abstract: International audience; Device characterization of Quantum-Dash semiconductor laser using a continuous tuning swept source is presented. This technique is linear, simple and does not require any prior information about the signal under test
Published: 2018

21. Multiscale in modelling and validation for solar photovoltaics

Author: Witold Jacak, Emmanuel Stratakis, J. C. Rimada, Hele Savin, Efrat Lifshitz, Mimoza Ristova, Mateja Hočevar, Radovan Kopecek, Blas Garrido, M. J. M. Gomes, Mircea Guina, Konstantinos Petridis, Alessio Gagliardi, David Fuertes Marrón, Ivana Capan, Jacky Even, Jaroslav Zadny, Pavel Tománek, V. Donchev, Stefan Birner, Janne Halme, Zoe Amin-Akhlaghi, Fatma Yuksel, Frederic Cortes Juan, Ahmed Neijm, Lejo k. Joseph, Søren Madsen, Abdurrahman Şengül, Marija Drev, Kristian Berland, Jose G. F. Coutinho, Knut Deppert, Diego Alonso-Álvarez, José Silva, Lucjan Jacak, Georg Pucker, Marco Califano, Violetta Gianneta, Nicholas J. Ekins-Daukes, Nikola Bednar, Urs Aeberhard, Shuxia Tao, Spyridon Kassavetis, Rasit Turan, Jelena Radovanović, Katarzyna Kluczyk, Ullrich Steiner, Ivana Savic, Maria E. Messing, Victor Neto, Stanko Tomić, Neil Beattie, Shengda Wang, Androula G. Nassiopoulou, Antonio Martí Vega, Denis Mencaraglia, M. Sendova-Vassileva, Ákos Nemcsics, Felipe Murphy Armando, Boukje Ehlen, Jean-François Guillemoles, Matthias Auf der Maur, James P. Connolly, Laurent Pedesseau, Clas Persson, Christin David, Lacramioara Popescu, Bostjan Cerne, N. Adamovic, Jean-Louis Lazzari, JM José Maria Ulloa, Urša Opara Krašovec, Irinela Chilibon, Jan Storch, Zoran Jakšić, Antti Tukiainen, Tareq Abu Hamed, Martin Loncaric, Laurentiu Fara, V. Kazukauskas, Jean-Paul Kleider, Javad Zarbakhsh, Dead Sea-Arava Science Center (DSASC), Institut für Energie- und Klimaforschung - Photovoltaik (IEK-5), Forschungszentrum Jülich GmbH | Centre de recherche de Juliers, Helmholtz-Gemeinschaft = Helmholtz Association-Helmholtz-Gemeinschaft = Helmholtz Association, Imperial College London, ZAMSTEC − Science, Technology and Engineering Consulting, Università degli Studi di Roma Tor Vergata [Roma], University of Northumbria at Newcastle [United Kingdom], University of Leeds, Rudjer Boskovic Institute [Zagreb], Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Universitat Politècnica de València (UPV), Lund University [Lund], Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), University Politehnica of Bucharest [Romania] (UPB), Universidad Politécnica de Madrid (UPM), Technische Universität Munchen - Université Technique de Munich [Munich, Allemagne] (TUM), National Center for Scientific Research 'Demokritos' (NCSR), Centre of Physics of the University of Minho (CFUM), Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), Tampere University of Technology [Tampere] (TUT), Aalto University, University of Ljubljana, Wroclaw University of Science and Technology, University of Belgrade [Belgrade], Aristotle University of Thessaloniki, Vilnius University [Vilnius], Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Aarhus University [Aarhus], University College Cork (UCC), Óbuda University [Budapest], Universidade de Aveiro, University of Oslo (UiO), Technological Educational Institute of Crete, Fondazione Bruno Kessler [Trento, Italy] (FBK), University of Havana (Universidad de la Habana) (UH), Ss. Cyril and Methodius University in Skopje (UKIM), Tyndall National Institute [Cork], Zonguldak Bülent Ecevit University (BEU), Universidade de Taubaté (UNITAU), Cavendish Laboratory, University of Cambridge [UK] (CAM), Institute of Chemical Process Fundamentals of the ASCR, Czech Republic, Foundation for Research and Technology - Hellas (FORTH), Eindhoven University of Technology [Eindhoven] (TU/e), Brno University of Technology [Brno] (BUT), University of Salford, Middle East Technical University [Ankara] (METU), Gebze Technical University, Czech Academy of Sciences [Prague] (CAS), Carinthia University of Applied Sciences, MP1406, European Cooperation in Science and Technology, Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Sorbonne Université (SU), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC), Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Ss. Cyril and Methodius University in Skopje, Universidade do Minho, Dead Sea and Arava Science Center, Vienna University of Technology, Forschungszentrum Jülich, University of Rome Tor Vergata, Northumbria University, University of Oslo, nextnano GmbH, Rudjer Boskovic Institute, ZEL-EN d.o.o., National Institute of Research and Development for Optoelectronics, Université Paris-Saclay, Polytechnic University of Valencia, University of Aveiro, Madrid Institute for Advanced Studies in Nanoscience, Lund University, Sofia University St. Kliment Ohridski, Trimo Grp, Boukje.com Consulting, Centre National de la Recherche Scientifique (CNRS), University Politehnica of Bucharest, Technical University of Munich, University of Barcelona, Institute of Nanoscience and Nanotechnology, The University of Tokyo, Tampere University of Technology, Department of Applied Physics, Wrocław University of Science and Technology, University of Belgrade, ISC Konstanz eV, Vilnius University, Aix-Marseille Université, Technion-Israel Institute of Technology, Aarhus University, Polytechnic University of Madrid, University College Cork, Demokritos National Centre for Scientific Research, Silvaco Europe Ltd, Óbuda University, Hellenic Mediterranean University, Fondazione Bruno Kessler, University of Havana, SS Cyril and Methodius University in Skopje, Department of Electronics and Nanoengineering, Bulgarian Academy of Sciences, Bulent Ecevit University, Adolphe Merkle Institute, Czech Academy of Sciences, Foundation for Research and Technology - Hellas, Eindhoven University of Technology, Brno University of Technology, Middle East Technical University, Aalto-yliopisto, Zonguldak Bülent Ecevit Üniversitesi, Center for Computational Energy Research, and Computational Materials Physics
Subjects: Nano structures, lcsh:TJ807-830, Modelling and validation, 02 engineering and technology, semiconductors, 01 natural sciences, 7. Clean energy, Settore ING-INF/01 - Elettronica, Environmental footprints, law.invention, [SPI.MAT]Engineering Sciences [physics]/Materials, Semiconductor materials, WAVE BASIS-SET, law, Photovoltaics, CARRIER MULTIPLICATION, Multi-scale simulation, multi-scale modelling, Telecomunicaciones, COLLOIDAL QUANTUM DOTS, device simulation, NANOMETER-SCALE, Photovoltaic cells, Physics, Photovoltaic system, Nanostructured materials, Renewable energy resources, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Multiscale modeling, Electronic, Optical and Magnetic Materials, Characterization (materials science), Renewable energy, [CHIM.THEO]Chemical Sciences/Theoretical and/or physical chemistry, ELECTRONIC-STRUCTURE, SDG 12 – Verantwoordelijke consumptie en productie, Energías Renovables, Physical Sciences, TIGHT-BINDING, Systems engineering, Electrónica, 0210 nano-technology, NEAR-FIELD, solar cells, third generation photovoltaics, nano structures, Solar cells, J500, Ciências Naturais::Ciências Físicas, F300, H600, Third generation photovoltaics, ta221, Renewable energy source, Ciências Físicas [Ciências Naturais], lcsh:Renewable energy sources, GREENS-FUNCTION, Solar power generation, Different length scale, Physics, Applied, OPTICAL-RESPONSE, 0103 physical sciences, Solar cell, SDG 7 - Affordable and Clean Energy, Electrical and Electronic Engineering, 010306 general physics, Device simulations, Ecological footprint, Science & Technology, ta114, Renewable Energy, Sustainability and the Environment, business.industry, TOTAL-ENERGY CALCULATIONS, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Environmental technology, Nanostructures, Multiple exciton generation, 13. Climate action, Conversion efficiency, business, SDG 12 - Responsible Consumption and Production, SDG 7 – Betaalbare en schone energie
Abstract: Photovoltaics is amongst the most important technologies for renewable energy sources, and plays a key role in the development of a society with a smaller environmental footprint. Key parameters for solar cells are their energy conversion efficiency, their operating lifetime, and the cost of the energy obtained from a photovoltaic system compared to other sources. The optimization of these aspects involves the exploitation of new materials and development of novel solar cell concepts and designs. Both theoretical modeling and characterization of such devices require a comprehensive view including all scales from the atomic to the macroscopic and industrial scale. The different length scales of the electronic and optical degrees of freedoms specifically lead to an intrinsic need for multiscale simulation, which is accentuated in many advanced photovoltaics concepts including nanostructured regions. Therefore, multiscale modeling has found particular interest in the photovoltaics community, as a tool to advance the field beyond its current limits. In this article, we review the field of multiscale techniques applied to photovoltaics, and we discuss opportunities and remaining challenges. © T. Abu Hamed et al., published by EDP Sciences, 2018., European Cooperation in Science and Technology: MP1406, The authors are grateful for the financial support by the COST Action MP1406 “MultiscaleSolar.”
Published: 2018

22. Fast-recovery of the amplitude and phase of short optical pulses using a frequency-swept source based heterodyne measurement

Author: Yaneck Gottesman, Mokhtar Korti, Abderrahim Ramdane, Tatiana Habruseva, Svetlana Slepneva, Kamel Merghem, Omar Seddiki, Guillaume Huyet, Badr-Eddine Benkelfat, Département Electronique et Physique (EPH), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Traitement de l'Information Pour Images et Communications (TIPIC-SAMOVAR), Services répartis, Architectures, MOdélisation, Validation, Administration des Réseaux (SAMOVAR), Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP)-Institut Mines-Télécom [Paris] (IMT)-Télécom SudParis (TSP), Laboratoire de Télécommunications de Tlemcen (LTT), Université Aboubekr Belkaid - University of Belkaïd Abou Bekr [Tlemcen], Centre National de la Recherche Scientifique (CNRS), Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology (CIT), Tyndall National Institute [Cork], Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), and Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
Subjects: lcsh:Applied optics. Photonics, 010504 meteorology & atmospheric sciences, Heterodyne detection, tunable laser, Physics::Optics, Optical information processing, Entire optical spectrum, 01 natural sciences, phase measurement, Tunable laser, law.invention, Beat signal, law, lcsh:QC350-467, Frequency-swept source, Physics, Measurement by laser beam, Optical polarization, Phase measurement, Atomic and Molecular Physics, and Optics, Time-frequency analysis, Amplitude, Optical recording, lcsh:Optics. Light, Single continuous sweep, Beat (acoustics), Laser mode locking, Optical pulse generation, 010309 optics, Optics, Fast phase recovery, 0103 physical sciences, Electrical and Electronic Engineering, Oscilloscope, 0105 earth and related environmental sciences, business.industry, lcsh:TA1501-1820, Fast oscilloscope, Optical mixing, Laser, Heterodyne measurement, Short optical pulses, Ultrafast measurements, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Mode-locked laser, Fast amplitude recovery, Optical variables measurement, business, Linearly swept frequency source
Abstract: We propose a very fast heterodyne technique to recover the amplitude and phase of short optical pulses generated, e.g., by a mode-locked laser. A linearly swept frequency source is used to scan the entire optical spectrum of the mode-locked laser in a single continuous sweep. The beat signal is recorded on a fast oscilloscope and then digitally processed allowing the simultaneous recovery of the amplitude and the phase. This measurement is fast (less than ${2\,\mu \text{s}}$ ) and requires no prior spectral information about the signal under test.
Published: 2018

23. Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

Author: Florent Houdellier, F. Cristiano, Enrico Napolitani, Karim Huet, R. Carles, Ray Duffy, R. Milazzo, A. La Magna, Simona Boninelli, University of Catania [Italy], Universita degli Studi di Padova, Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), Interférométrie, In situ et Instrumentation pour la Microscopie Electronique (CEMES-I3EM), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Tyndall National Institute [Cork], Laser Systems and Solutions of Europe (LASSE), Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Università degli Studi di Padova = University of Padua (Unipd), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)
Subjects: Silicon, Germanium, doping, laser annealing, lattice parameter, Materials science, Annealing (metallurgy), lcsh:Biotechnology, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], Activation, chemistry.chemical_element, 02 engineering and technology, Dopant Activation, 01 natural sciences, Molecular physics, Strain, [SPI.MAT]Engineering Sciences [physics]/Materials, Condensed Matter::Materials Science, Lattice constant, [PHYS.QPHY]Physics [physics]/Quantum Physics [quant-ph], lcsh:TP248.13-248.65, 0103 physical sciences, [PHYS.HEXP]Physics [physics]/High Energy Physics - Experiment [hep-ex], General Materials Science, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Dopant, Doping, General Engineering, 021001 nanoscience & nanotechnology, Beam electron-diffraction, lcsh:QC1-999, germanium, [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism, Photonics, Ion implantation, Atomic radius, Semiconductors, chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Si, 0210 nano-technology, [SPI.SIGNAL]Engineering Sciences [physics]/Signal and Image processing, lcsh:Physics
Abstract: Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 x 10(20) cm(-3)) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom beta(Ps) = +0.7 +/- 0.1 angstrom(3). This clearly indicates that, despite the small atomic radius of P compared to Ge, the "electronic contribution" to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the "size mismatch contribution" associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work. (c) 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license.
Published: 2018

24. Impact of momentum mismatch on 2D van der Waals tunnel field-effect transistors

Author: Marco G. Pala, Alessandro Cresti, Jiang Cao, Demetrio Logoteta, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Tyndall National Institute [Cork], Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), ANR-13-NANO-0009,NOODLES,Modélisation de nanodispositifs pour des applications à faible consommation(2013), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Acoustics and Ultrasonics, Tunnel field-effect-transistor, Phonon, 02 engineering and technology, Electron, 2D transition metal dichalcogenides, 01 natural sciences, tunnel field-effect-transistor, symbols.namesake, [SPI]Engineering Sciences [physics], 0103 physical sciences, Quantum tunnelling, 010302 applied physics, Physics, [PHYS]Physics [physics], Momentum (technical analysis), Condensed matter physics, Scattering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Tunnel field-effect transistor, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Non-equilibrium Green’s function, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Threshold voltage, non-equilibrium Green’s function, symbols, van der Waals heterostructures, van der Waals force, 0210 nano-technology
Abstract: International audience; We numerically investigate electron quantum transport in 2D van der Waals tunnel field-effect-transistors in the presence of lateral momentum mismatch induced by lattice mismatch or rotational misalignment between the two-dimensional layers. We show that a small momentum mismatch induces a threshold voltage shift without altering the subthreshold swing. On the contrary, a large momentum mismatch produces significant potential variations and ON-current reduction. Short-range scattering, such as that due to phonons or system edges, enables momentum variations, thus enhancing interlayer tunneling. The coupling of electrons with acoustic phonons is shown to increase the ON current without affecting the subthreshold swing. In the case of optical phonons, the ON-current increase is accompanied by a subthreshold swing degradation due to the inelastic nature of the scattering.
Published: 2018

25. Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures

Author: Marco G. Pala, Alessandro Cresti, Jiang Cao, François Triozon, Jejune Park, Tyndall National Institute [Cork], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), and ANR-10-LABX-0055,MINOS Lab,Minatec Novel Devices Scaling Laboratory(2010)
Subjects: Materials science, nonequilibrium G reen’s functions, Ocean Engineering, 02 engineering and technology, 01 natural sciences, law.invention, [SPI]Engineering Sciences [physics], Planar, quantum transport simulation, law, 0103 physical sciences, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Safety, Risk, Reliability and Quality, Quantum tunnelling, 010302 applied physics, business.industry, tunnel field-effect transistor, Transistor, 2 D materials, Heterojunction, 021001 nanoscience & nanotechnology, Tunnel field-effect transistor, Nanoelectronics, Optoelectronics, Field-effect transistor, 0210 nano-technology, business, Realization (systems)
Abstract: International audience; Thanks to their thinness, self-passivated surface and large variety, two-dimensional materials have attracted much interest for their possible application in nanoelectronics. In particular, semiconducting transition metal dichalcogenides and their van der Waals heterostructures are very promising for the realization of low-power tunnel fieldeffect transistors. By means of self-consistent quantum transport simulations, we explore the performances of two alternative architectures for the devices: the planar architecture and the vertical architecture. While for the former, which is based on a p-i-n junction, the tunneling occurs laterally within the same two-dimensional material layer, in the latter the tunneling occurs through the vertical heterostructure between two different materials, which are chosen to have a convenient band alignment. Our results enable a comparison of the performance of two architectures in the ideal case, and can serve as a first guide for the choice of the transistor design based on the desired application.
Published: 2018

26. Discrete Relaxation Oscillation Frequency Hopping in Delayed-feedback Semiconductor Lasers

Author: Michael J. Wishon, Pavel A. Dmitriev, Bryan Kelleher, Boguslaw Tykalewicz, Anton V. Kovalev, Alexandre Locquet, David Goulding, Evgeny A. Viktorov, Tyndall National Institute [Cork], School of Chemical Sciences, Dublin City University [Dublin] (DCU), Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), and Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS)
Subjects: Physics, Semiconductor lasers, Resonant frequency, Oscillation, Physics::Optics, Discrete set, Laser modes, Laser feedback, 01 natural sciences, Instability, 010305 fluids & plasmas, Semiconductor laser theory, [SPI]Engineering Sciences [physics], Quantum electrodynamics, 0103 physical sciences, Frequency-hopping spread spectrum, Relaxation (physics), Bifurcation, Oscillators, [NLIN]Nonlinear Sciences [physics], 010306 general physics, Cavity resonators, ComputingMilieux_MISCELLANEOUS
Abstract: International audience; We study the dynamics of semiconductor lasers subject to strong delayed optical feedback. We find that the discrete nature of the external-cavity modes leads to a discrete set of relaxation oscillation frequencies observed at the onset of the first instability as the pump current is increased. This explains experimentally observed hops between the frequencies.
Published: 2018

27. Towards a portable smart spatial exploration system for environment perception

Author: Lesecq, S., Debicki, O., Foucault, J., Ouvry, L., Correvon, M., Dudnik, G., Barrett, J., Rea, S., Alan McGibney, Birot, F., Chaumont, H., Sevrin, L., Banach, R., Razavi, J., Herveg, J., Grandjean, N., Jackson, C., Buckley, S., Di Matteo, A., Di Palma, V., Ó Murchú, C., Mathewson, A., O Keeffe, R., lesecq, suzanne, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre Suisse d'Electronique et de Microtechnique SA [Neuchatel] (CSEM), Centre Suisse d'Electronique et Microtechnique SA (CSEM), Cork Institute of Technology (CIT), GoSense, School of Computer Science [Manchester], University of Manchester [Manchester], Université de Namur [Namur] (UNamur), SensL, STMicroelectronics, Tyndall National Institute [Cork], and Otto, Thomas
Subjects: [SPI.AUTO] Engineering Sciences [physics]/Automatic, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.AUTO]Engineering Sciences [physics]/Automatic
Abstract: International audience
Published: 2018

28. Exploring the optical properties of Vernier phase yttrium oxyfluoride thin films grown by pulsed liquid injection MOCVD

Author: Jean-Luc Deschanvres, Hervé Roussel, Shan-Ting Zhang, Carmen Jiménez, Mircea Modreanu, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Tyndall National Institute [Cork], and Lmgp, Labo
Subjects: [CHIM.MATE] Chemical Sciences/Material chemistry, Materials science, business.industry, Doping, chemistry.chemical_element, 02 engineering and technology, Yttrium, Chemical vapor deposition, [CHIM.MATE]Chemical Sciences/Material chemistry, 010402 general chemistry, 021001 nanoscience & nanotechnology, 7. Clean energy, 01 natural sciences, 0104 chemical sciences, Inorganic Chemistry, chemistry, Optoelectronics, Deposition (phase transition), Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, Luminescence, business, Refractive index
Abstract: In this work, we report on the first successful deposition of Vernier phase yttrium oxyfluoride (V-YOF) thin films on Si (100) wafers using pulsed liquid injection metal organic chemical vapor deposition (PLI-MOCVD). The formation of V-YOF has been confirmed by X-ray diffraction measurements and electron probe microanalysis. The infrared phonon modes of V-YOF thin films and their corresponding optical constants as inferred from spectroscopic ellipsometry are reported here for the first time. The V-YOF thin films are featured by a broad absorption band centering around 370-373 cm-1; their refractive index is located between those of YF3 and Y2O3, and which shows an intimate relationship with the oxygen content in the film. The luminescence properties of Er3+ doped V-YOF thin films are finally examined and compared with that of YF3. Our results highlight that the as-deposited V-YOF thin films by PLI-MOCVD serve as promising candidates as efficient host material for spectral conversion for photovoltaic applications.
Published: 2018

29. Delay induced high order locking effects in semiconductor lasers

Author: Evgeny A. Viktorov, Michael J. Wishon, Alexandre Locquet, David Goulding, Bryan Kelleher, Boguslaw Tykalewicz, Guillaume Huyet, Tyndall National Institute [Cork], Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), School of Electrical and Computer Engineering [Atlanta], Georgia Institute of Technology [Atlanta], Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology (CIT), Institut de Physique de Nice (INPHYNI), Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] (ITMO), Optique Nonlinéaire Théorique (ONT), Université libre de Bruxelles (ULB), University College Cork (UCC), Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Georgia Institute of Technology [Lorraine, France]-Georgia Institute of Technology [Atlanta]-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Ecole Nationale Supérieure des Arts et Metiers Metz-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), and COMUE Université Côte d'Azur (2015 - 2019) (COMUE UCA)
Subjects: Semiconductor laser, General Physics and Astronomy, Physics::Optics, 02 engineering and technology, 01 natural sciences, law.invention, Semiconductor laser theory, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, Optics, law, Chemical reactions, Radiofrequency spectroscopy, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, 010306 general physics, Mathematical Physics, Quantum well, Physics, [PHYS]Physics [physics], Relaxation oscillations, Oscillation, business.industry, Applied Mathematics, Quantum dot, Photodetectors, Statistical and Nonlinear Physics, Rate equation, Laser, Cavity repetition rate, Quantum well devices, Quantum dot laser, Spontaneous mode-locking, Relaxation (physics), Atomic physics, business
Abstract: International audience; The semiconductor laser undergoing feedback is one of the most well-studied, non-linear laser configurations. It is of vital importance for applications given the ubiquity of lasers in modern technology and it is also the source of many fundamental non-linear phenomena. Semiconductor lasers have two intrinsic timescales: the cavity repetition rate (set primarily by the length of the laser) and the relaxation oscillation frequency (describing the rate at which energy is transferred between the electric field and the charge carriers). These two timescales are very different in typical devices. The relaxation oscillation frequency is typically on the order of a few GHz while the cavity repetition rate is often many tens of GHz. While nonlinear systems involving multiple time scales often lead to resonant effects, the vast separation in these two timescales means this is not typically observed with semiconductor lasers. By including delayed optical feedback, a third timescale is introduced— the external cavity repetition rate. This is often much lower than the solitary cavity repetition rate. We show here that for lasers with highly damped relaxation oscillations, resonances between the relaxation oscillations and the external cavity modes can and do occur and indeed, lead to spontaneous mode-locking. In fact, high order locking effects are possible with multipulse intensity trains.
Published: 2017

30. Hydrodynamic gene delivery in human skin using a hollow microneedle device

Author: P. Porta, Florence Susan Wong, Sion Coulman, Bernard Malissen, Maria Dul, James Caradoc Birchall, Colin M. Dayan, Sandrine Henri, Yotam Levin, Efrat Kochba, M. Stefanidou, J. Serve, Conor O'Mahony, Cardiff University, Tyndall National Institute, Cork, Centre d'Immunologie de Marseille - Luminy (CIML), Aix Marseille Université (AMU)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS), European Project: 305305,EC:FP7:HEALTH,FP7-HEALTH-2012-INNOVATION-1,EE-ASI(2012), and Institut National de la Santé et de la Recherche Médicale (INSERM)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)
Subjects: 0301 basic medicine, RM, Injections, Intradermal, Microinjections, Genetic enhancement, Skin Absorption, Cell Culture Techniques, Pharmaceutical Science, Gene Expression, Human skin, 02 engineering and technology, Gene delivery, Administration, Cutaneous, Transfection, Cell Line, 03 medical and health sciences, Plasmid, Gene therapy, Gene expression, Humans, Tissue Distribution, Intradermal injection, Bleb (cell biology), RNA, Small Interfering, Skin, Chemistry, Papillary dermis, Gene Transfer Techniques, Dermis, DNA, Hydrodynamic, 021001 nanoscience & nanotechnology, Molecular biology, 030104 developmental biology, Needles, Hydrodynamics, Genetic vaccine, [SDV.IMM]Life Sciences [q-bio]/Immunology, Epidermis, 0210 nano-technology, Biomedical engineering, Microneedles
Abstract: International audience; Microneedle devices have been proposed as aminimally invasive delivery system for the intradermal administration of nucleic acids, both plasmid DNA (pDNA) and siRNA, to treat localised disease or provide vaccination. Different microneedle types and application methods have been investigated in the laboratory, but limited and irreproducible levels of gene expression have proven to be significant challenges to pre-clinical to clinical progression. This study is the first to explore the potential of a hollow microneedle device for the delivery and subsequent expression of pDNA in human skin. The regulatory approved MicronJet600 (R) (MicronJet hereafter) device was used to deliver reporter plasmids (pCMV beta and pEGFP-N1) into viable excised human skin. Exogenous gene expression was subsequently detected at multiple locations that were distant from the injection site but within the confines of the bleb created by the intradermal bolus. The observed levels of gene expression in the tissue are at least comparable to that achieved by the most invasive microneedle application methods e.g. lateral application of a microneedle. Gene expression was predominantly located in the epidermis, although also evident in the papillary dermis. Optical coherence tomography permitted real time visualisation of the sub-surface skin architecture and, unlike a conventional intradermal injection, MicronJet administration of a 50 mu L bolus appears to create multiple superficial microdisruptions in the papillary dermis and epidermis. These were co-localised with expression of the pCMV beta reporter plasmid. We have therefore shown, for the first time, that a hollow microneedle device can facilitate efficient and reproducible gene expression of exogenous naked pDNA in human skin using volumes that are considered to be standard for intradermal administration, and postulate a hydrodynamic effect as the mechanism of gene delivery. (C) 2017 Elsevier B.V. All rights reserved.
Published: 2017

31. Self-assembled three-dimensional inverted photonic crystals on a photonic chip

Author: Arpianen, Sanna, Vynck, Kevin, Dekker, James, Kapulainen, Markku, Khunsin, Worawut, Aalto, Timo, Mulot, Mikael, Kocher-Oberlehrer, Gudrun, Zentel, Rudolf, Sotomayor Torres, Clivia, Cassagne, David, Ahopelto, Jouni, VTT Technical Research Centre of Finland (VTT), Laboratoire Photonique, Numérique et Nanosciences (LP2N), Université de Bordeaux (UB)-Institut d'Optique Graduate School (IOGS)-Centre National de la Recherche Scientifique (CNRS), Tyndall National Institute [Cork], Blackett Laboratory, Imperial College London, School of Engineering and Physical Sciences [Edinburgh] (EPS-HWU), Heriot-Watt University [Edinburgh] (HWU), Institute of Organic Chemistry [Mainz], Johannes Gutenberg - Universität Mainz (JGU), Catalan Institute of Nanoscience and Nanotechnology (ICN2), Consejo Superior de Investigaciones Científicas [Madrid] (CSIC)-Barcelona Institute of Science and Technology (BIST), Institució Catalana de Recerca i Estudis Avançats (ICREA), Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), LP2N_A2, and LP2N_G6
Subjects: [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], photonic crystals, Physics::Optics, integration, waveguides, OtaNano, photonic band gap, ComputingMilieux_MISCELLANEOUS, inverted opals
Abstract: Three dimensional photonic crystals (PhCs) exhibiting a full photonic band gap have high potential in optical signal processing and detector applications. However, the challenges in the integration of the 3D PhCs into photonic circuits have so far hindered their exploitation in real devices. This article demonstrates the fabrication of 3D PhCs exploiting the capillary directed self-assembly (CDSA) of monodisperse colloidal silica spheres, their inversion to silicon shells, and integration with silicon waveguides. The measured transmission characteristics agree with numerical predictions and provide strong indication of a full photonic band gap in the inverted 3D photonic crystals at wavelengths close to 1.55µm. Silicon inverted photonic crystal self-assembled into a cavity in a waveguide intersection and the corresponding photonic band structure of the crystal, together with the simulated transmission, reflection, and absorption spectra.
Published: 2017

32. Al 4 SiC 4 vibrational properties: density functional theory calculations compared to Raman and infrared spectroscopy measurements

Author: Pedesseau, L., Chaix-Pluchery, O., Modreanu, M., Chaussende, D., Sarigiannidou, E., Rolland, A., Even, J., Durand, O., Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Tyndall National Institute [Cork], CINES, Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)
Subjects: [PHYS]Physics [physics]
Abstract: International audience; Al4SiC4 is a new semiconductor with numerous potential technological applications. We report here the first thorough experimental Raman and Infrared (IR) investigation of vibrational properties of Al4SiC4 single crystals grown by high temperature solution growth method. The experimental results are compared with the full theoretical analysis of vibrational properties based on Density Functional Theory calculations that are revisited here. We have obtained a good agreement between the experimental and calculated Raman phonon modes, and this allowed the symmetry assignment of all the measured Raman modes. We have revisited the Density Functional Theory calculation of the IR active phonon modes and our results for LO-TO splitting indicate a substantial decrease of ΔωLO − TO compared with the previous reported calculation. Moreover, most of the IR modes have been symmetry assigned from the comparison of the experimental IR spectra with the corresponding Raman spectra and the Al4SiC4 calculated phonon modes.
Published: 2017

33. INSPEX: design and integration of a portable/wearable smart spatial exploration system

Author: Francois Birot, P. Heck, V. Di Palma, John Barrett, Cian O'Murchu, J.-M. Van Gyseghem, Suzanne Lesecq, Sandra Rea, A. Di Matteo, Julie Foucault, H. de Chaumont, Carl Jackson, Richard Banach, Alan Mathewson, M. Correvon, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre Suisse d'Electronique et Microtechnique SA (CSEM), Cork Institute of Technology (CIT), GoSense, School of Computer Science [Manchester], University of Manchester [Manchester], Université de Namur [Namur] (UNamur), SensL, STMicroelectronics, Tyndall National Institute [Cork], This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 730953This work was supported in part by the Swiss Secretariat for Education, Research and Innovation (SERI) under Grant 16.0136 730953. We thank them for their support., H2020 INSPEX project nb 730953 and Swiss Secretariat for Education, Research and Innovation (SERI) under Grant 16.0136 730953, and lesecq, suzanne
Subjects: Engineering, low-power, Surrounding perception, portable, Integrated system, Wearable computer, 02 engineering and technology, Robot obstacle avoidance systems, 01 natural sciences, wearable, INSPEX H2020 project, Embedded, [INFO.INFO-TS]Computer Science [cs]/Signal and Image Processing, SAFER, [INFO.INFO-AU]Computer Science [cs]/Automatic Control Engineering, Low-power, 0202 electrical engineering, electronic engineering, information engineering, Wearable computers, Collision avoidance, Wearable smart spatial exploration system, Visibility (geometry), spatial exploration, health, Navigation, Handicapped aids, Health, Obstacle, Three-dimensional displays, [INFO.INFO-ES]Computer Science [cs]/Embedded Systems, [INFO.INFO-AU] Computer Science [cs]/Automatic Control Engineering, Drone obstacle avoidance systems, [INFO.INFO-TS] Computer Science [cs]/Signal and Image Processing, Wearable, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Real-time computing, [SPI.AUTO]Engineering Sciences [physics]/Automatic, Robot sensing systems, Obstacle avoidance, Spatial exploration, embedded, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Portable smart spatial exploration system, business.industry, 020208 electrical & electronic engineering, 010401 analytical chemistry, surrounding perception, Drone, 0104 chemical sciences, [INFO.INFO-ES] Computer Science [cs]/Embedded Systems, Laser radar, [SPI.AUTO] Engineering Sciences [physics]/Automatic, Embedded system, ntegrated system, Power demand, Robot, Human navigation, business, Radar cross-sections, Portable
Abstract: International audience; The INSPEX H2020 project main objective is to integrate automotive-equivalent spatial exploration and obstacle detection functionalities into a portable/ wearable multi-sensor, miniaturised, low power device. The INSPEX system will be used for 3D real-time detection, location and warning of obstacles under all environmental conditions in indoor and outdoor environments with static and mobile obstacles. Potential applications range from safer human navigation in reduced visibility conditions , small robot/drone obstacle avoidance systems to navigation for the visually/mobility impaired, this latter being the primary use-case considered in the project.
Published: 2017

34. Demonstration of a Partially Integrated Silicon Photonics ONU in a Self-Coherent Reflective FDMA PON

Author: Sylvie Menezo, Stephane Bernabe, Daniele Baldi, Fabienne Saliou, Valter Ferrero, Guang-Hua Duan, Benoit Charbonnier, Paolo Savio, Maryse Fournier, Riccardo Marchetti, Viviane Muffato, Stefano Straullu, Enrico Temporiti, Lee Carroll, Giuseppe Franco, Jun Lee, Matteo Repossi, Silvio Abrate, Peter O'Brien, Roberto Gaudino, Gabriele Minoia, Istituto Superiore Mario Boella (ISMB), Politecnico di Torino = Polytechnic of Turin (Polito), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Tyndall National Institute [Cork], Università degli Studi di Pavia, Alcatel-Thales III-V Lab (III-V Lab), THALES, Orange Labs [Lannion], France Télécom, European Project: 318704,EC:FP7:ICT,FP7-ICT-2011-8,FABULOUS(2012), Università degli Studi di Pavia = University of Pavia (UNIPV), and THALES [France]
Subjects: Engineering, Self-coherent detection, Optical network units, 02 engineering and technology, Optical switch, Passive optical network, Power budget, Reflective modulation, Atomic and Molecular Physics, and Optics, [SPI]Engineering Sciences [physics], 020210 optoelectronics & photonics, Optical Transport Network, Atomic and Molecular Physics, Optical reflection, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Optical fibers, Passive optical networks, Silicon photonics, business.industry, Optical cross-connect, Integrated optics, Optical performance monitoring, self-coherent detection, Optical transistor, and Optics, business, Optical attenuators, reflective modulation
Abstract: International audience; We report about the final results of the FABULOUS European project, demonstrating the feasibility of real-time Ethernet transmission on a self-coherent reflective passive optical network, using an optical network unit (ONU) whose main optical functions are performed by a silicon-photonics device; 500 Mbps per user with a power budget of 24 dB in offline processing and 21 dB in real time is shown. We also report details about the packaging process and the special technique developed for the flip-chipping of a CMOS electrical driver, used for driving the ONU with low voltage, onto a silicon Mach-Zehnder modulator.
Published: 2017

35. Well separated trion and neutral excitons on superacid treated MoS 2 monolayers

Author: Cadiz, Fabian, Tricard, Simon, Gay, Maxime, Lagarde, Delphine, Wang, Gang, Robert, Cédric, Renucci, Pierre, Urbaszek, Bernhard, Marie, Xavier, Laboratoire de physique de la matière condensée (LPMC), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Tyndall National Institute [Cork], Institut National des Sciences Appliquées (INSA), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), and Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)
Subjects: Condensed Matter::Materials Science, Optical electronics, Semiconductors, Photoluminescence spectroscopy, Condensed Matter::Other, Lasers Excitons, Transition metal chalcogenides, Selection rule, Quasiparticle, [CHIM]Chemical Sciences, Localized states, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Time-resolved photoluminescence
Abstract: International audience; Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs, the photoluminescence (PL) spectra even at low temperature consist typically of broad, overlapping contributions from neutral, charged excitons (trions) and localized states. Here, we show that in superacid treated MoS2 MLs, the PL intensity increases by up to 60 times at room temperature. The neutral and charged exciton transitions are spectrally well separated in PL and reflectivity at T = 4 K, with linewidth for the neutral exciton of 15 meV, but both transitions have similar intensities compared to the ones in as-exfoliated MLs at the same temperature. Time resolved experiments uncover picoseconds recombination dynamics analyzed separately for charged and neutral exciton emissions. Using the chiral interband selection rules, we demonstrate optically induced valley polarization for both complexes and valley coherence for only the neutral exciton.
Published: 2016

36. Optical properties of potential-inserted quantum wells in the near infrared and Terahertz ranges

Author: R. Heyd, R. Benchamekh, Paul Voisin, Soline Boyer-Richard, Jean-Marc Jancu, R. Samti, F. Raouafi, Laboratoire de physico-chimie des matériaux polymères (IPSET), Institut préparatoire aux Etudes Scientifiques et Techniques, Tyndall National Institute [Cork], Interface, Confinement, Materials and Nanostructures, Orleans University, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS)
Subjects: Range (particle radiation), Condensed Matter - Materials Science, Materials science, Condensed matter physics, Terahertz radiation, Near-infrared spectroscopy, Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, 02 engineering and technology, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Three level, 0103 physical sciences, Monolayer, Materials Chemistry, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Longitudinal optical, 010306 general physics, 0210 nano-technology, Energy (signal processing), Quantum well
Abstract: We propose an engineering of the optical properties of GaAs/AlGaAs quantum wells using AlAs and InAs monolayer insertions. A quantitative study of the effects of the monolayer position and the well thickness on the interband and intersubband transitions, based on the extended-basis sp 3 d 5 s ⁎ tight-binding model, is presented. The effect of insertion on the interband transitions is compared with existing experimental data. As for intersubband transitions, we show that in a GaAs/AlGaAs quantum well including two AlAs and one InAs insertions, a three level { e 1 , e 2 , e 3 } system where the transition energy e 3 − e 2 is lower and the transition energy e 2 − e 1 larger than the longitudinal optical phonon energy (36 meV) can be engineered together with a e 3 − e 2 transition energy widely tunable through the TeraHertz range.
Published: 2016

37. Defect evolution and dopant activation in laser annealed Si and Ge

Author: S. Boninelli, Peter Folmer Nielsen, Maryam Shayesteh, Fulvio Mazzamuto, Dirch Hjorth Petersen, Karim Huet, Y. Qiu, Filadelfo Cristiano, M. Quillec, Ray Duffy, A. La Magna, Henrik Hartmann Henrichsen, G. Caruso, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Tyndall National Institute [Cork], Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Technical University of Denmark [Lyngby] (DTU), ESCMID (ESCAR), ESCMID [Basel], MATIS CNR-INFM Dipartimento di Metodologie Fisiche e Chimiche (DMFCI) (MATIS), Università degli studi di Catania [Catania]- Istituto Nazionale di Fisica Nucleare (INFN), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Danmarks Tekniske Universitet = Technical University of Denmark (DTU), and Università degli studi di Catania = University of Catania (Unict)- Istituto Nazionale di Fisica Nucleare (INFN)
Subjects: Electron mobility, Materials science, Silicon, Annealing (metallurgy), Laser thermal annealing, chemistry.chemical_element, Germanium, 02 engineering and technology, Dopant activation, Dopant Activation, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, [SPI]Engineering Sciences [physics], 0103 physical sciences, General Materials Science, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, [PHYS]Physics [physics], business.industry, Mechanical Engineering, Doping, Extended defects, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Crystallography, Ion implantation, Semiconductor, chemistry, Mechanics of Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Transmission electron microscopy
Abstract: International audience; Defect evolution and dopant activation are intimately related to the use of ion implantation and an-nealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show that laser anneal favours the formation of "unconventional" (001) loops that, following non-melt anneals, act as carrier scattering centres, leading to carrier mobility degradation. In contrast, in the case of melt anneals, the molten region itself is of excellent crystalline quality, defect-free and with very high activation rates. As for laser annealed Germanium, we studied in detail the amorphous to crystalline Ge phase transition as a function of the increasing LTA energy density and we found that using LTA, very high carrier concentrations (above 10 20 cm À 3) were achieved in As doped regions, which are unachievable with conventional rapid thermal annealing (RTA) processes.
Published: 2016

38. Silicon nanocrystals: Novel synthesis routes for photovoltaic applications

Author: Ling Xie, Jérémy Barbé, Shane O'Brien, Miro Zeman, Hugh Doyle, Karol Jarolimek, Keith Linehan, Etienne Quesnel, Bernard Despax, Andrew J. Kingsley, Simon Perraud, Viviane Muffato, Stephen P. Richards, René A. C. M. M. van Swaaij, Klaus Leifer, Ian M. Povey, S. Parola, Martyn E. Pemble, Pascal Faucherand, Christine Morin, Kremena Makasheva, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Delft University of Technology (TU Delft), SAFC Hitech, Tyndall National Institute [Cork], Department Engineering Sciences - Industrial Engineering and Management [Uppsala], Uppsala University, Matériaux et Procédés Plasmas (LAPLACE-MPP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), and Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3)
Subjects: Materials science, Silicon, Annealing (metallurgy), Hybrid silicon laser, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 7. Clean energy, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Photovoltaics, 0103 physical sciences, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Nanocomposite, business.industry, Wide-bandgap semiconductor, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Nanocrystal, 0210 nano-technology, business
Abstract: Novel processes were developed for fabricating silicon nanocrystals and nanocomposite materials which could be used as absorbers in third generation photovoltaic devices. A conventional high-temperature annealing technique was studied as a reference process, with some new insights in crystallisation mechanisms. Innovative methods for silicon nanocrystal synthesis at much lower temperature were demonstrated, namely chemical vapour deposition (CVD), physical vapour deposition (PVD) and aerosol-assisted CVD. Besides the advantage of low substrate temperature, these new techniques allow to fabricate silicon nanocrystals embedded in wide bandgap semiconductor host matrices, with a high density and a narrow size dispersion.
Published: 2012

39. Electropolishing of medical-grade stainless steel in preparation for surface nano-texturing

Author: Michael Thompson, Damien W. M. Arrigan, Pasquale Benvenuto, Paul Galvin, F. Nazneen, Grégoire Herzog, Tyndall National Institute [Cork], Nanochemistry Research Institute [Perth], Curtin University [Perth], Planning and Transport Research Centre (PATREC)-Planning and Transport Research Centre (PATREC), Department of Chemistry [University of Toronto], and University of Toronto
Subjects: Materials science, 020209 energy, Metallurgy, technology, industry, and agriculture, [CHIM.MATE]Chemical Sciences/Material chemistry, 02 engineering and technology, Electrolyte, Surface finish, Chronoamperometry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Contact angle, Electropolishing, X-ray photoelectron spectroscopy, Linear sweep voltammetry, 0202 electrical engineering, electronic engineering, information engineering, Electrochemistry, Surface roughness, General Materials Science, Electrical and Electronic Engineering, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS
Abstract: The purpose of this work is to investigate the electropolishing of medical-grade 316 L stainless steel to obtain a clean, smooth, and defect-free surface in preparation for surface nano-texturing. Electropolishing of steel was conducted under stationary conditions in four electrolyte mixtures: (A) 4.5 M H2SO4 + 11 M H3PO4, (B) 7.2 M H2SO4 + 6.5 M H3PO4, (C) 6.4 M glycerol + 6.1 M H3PO4, and (D) 6.1 M H3PO4. The influence of electrolyte composition and concentration, temperature, and electropolishing time, in conjunction with linear sweep voltammetry and chronoamperometry, on the stainless steel surface was studied. The resulting surfaces of unpolished and optimally polished stainless steel were characterized in terms of contamination, defects, topography, roughness, hydrophilicity, and chemical composition by optical and atomic force microscopies, contact angle goniometry, and X-ray photoelectron spectroscopy. It was found that the optimally polished surfaces were obtained with the following parameters: electrolyte mixture A at 2.1 V of applied potential at 80 °C for 10 min. This corresponded to the diffusion-limited dissolution of the surface. The root mean square surface roughness of the electropolished surface achieved was 0.4 nm over 2 × 2 μm2. Surface analysis showed that electropolishing led to ultraclean surfaces with reduced roughness and contamination thickness and with Cr, P, S, Mo, Ni, and O enrichment compared to untreated surfaces.
Published: 2011

40. Nucleation and Chemical Transformation of RuO2 Films Grown on (100) Si Substrates by Atomic Layer Deposition

Author: Aileen O'Mahony, Ian M. Povey, Lynette Keeney, Martyn E. Pemble, Mathieu Salaun, S. B. Newcomb, Amelie Salaün, and Tyndall National Institute [Cork]
Subjects: Materials science, Ruthenium oxide, Annealing (metallurgy), Scanning electron microscope, Analytical chemistry, Nucleation, Copper diffusion barriers, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Atomic force microscopy, Atomic layer deposition, Thin film, Process Chemistry and Technology, [CHIM.MATE]Chemical Sciences/Material chemistry, Surfaces and Interfaces, General Chemistry, 021001 nanoscience & nanotechnology, X-ray diffraction, 0104 chemical sciences, Electron diffraction, Transmission electron microscopy, Interconnect, 0210 nano-technology, Forming gas
Abstract: International audience; We describe the formation of RuO 2 thin films grown using atomic layer deposition (ALD) on (100) Si substrates from Ru(EtCp) 2 and O 2 , and the subsequent influence of annealing temperature and atmosphere on the surface morphology and structure of the deposited layers. The films are characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED). The as-deposited films consist of RuO 2 islands. No significant changes in composition or morphology are observed following annealing in N 2 for 4 h at either 500 or 7008C. Higher temperature annealing in N 2 (8208C, 4 h) results in some modifications to the morphology and structure where ED data indicate the formation of some Ru metal. However, complete transformation from as-deposited RuO 2 to Ru metal is, obtained after annealing in forming gas (95% N 2 /5% H 2) at 4208C for 5 min.
Published: 2011

41. A micromagnetic actuator for biomolecule manipulation

Author: Paul Galvin, Marin Gheorghe, Hervé Rostaing, Hichem Chetouani, Laboratoire de Génie Electrique de Grenoble (G2ELab), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Centre National de la Recherche Scientifique (CNRS), Tyndall National Institute [Cork], and Garcia, Sylvie
Subjects: Materials science, Magnetic separation, Nanotechnology, 02 engineering and technology, 01 natural sciences, Paramagnetism, 0103 physical sciences, Electrical and Electronic Engineering, Instrumentation, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, chemistry.chemical_classification, Biomolecule, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Metals and Alloys, equipment and supplies, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Magnet, Nucleic acid, 0210 nano-technology, Actuator, human activities, [SPI.NRJ] Engineering Sciences [physics]/Electric power
Abstract: An efficient and low cost way to attract and mix magnetic beads is reported, in which microserpentines wires shape were used in combination with a permanent magnet to polarize and magnetically saturate beads. The research included the design, modelling and an empirical evaluation of a novel device for manipulation of paramagnetic beads. The results reported indicate that the performance of this device agrees with expectations from the modelling, and suggests that the device has significant potential for applications requiring manipulation of biomolecules within BioMEMS, such isolation and purification of nucleic acids and proteins.
Published: 2007

42. Wide optical band gap Al4SiC4

Author: Pedesseau, Laurent, Even, Jacky, Durand, Olivier, Modreanu, Mircea, Chaussende, Didier, Chaix-Pluchery, Odette, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Tyndall National Institute [Cork], Laboratoire des matériaux et du génie physique (LMGP ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and PEDESSEAU, Laurent
Subjects: piezoelectricity, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], wide optical band gap, elastic constants, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [PHYS.COND] Physics [physics]/Condensed Matter [cond-mat], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS, Wurtzite type materials
Abstract: International audience
Published: 2015

43. Synthesis and Characterization of Al4SiC4: A 'New' Wide Band Gap Semiconductor Material

Author: Zevgitis, Dimitrios, Chaix-Pluchery, Odette, Doisneau, Béatrice, Modreanu, Mircea, La Manna, Joseph, Sarigiannidou, Eirini, Chaussende, Didier, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Tyndall National Institute [Cork]
Subjects: [CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2015

44. Optical properties of wide band gap Al4SiC4: experimental and theoretical approaches

Author: Pedesseau, Laurent, Even, Jacky, Durand, Olivier, Modreanu, Mircea, Chaussende, D., Chaix-Pluchery, Odette, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Tyndall National Institute [Cork], Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Subjects: [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], ComputingMilieux_MISCELLANEOUS
Abstract: International audience
Published: 2015

45. Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium

Author: Gauthier, Jean-Philippe, Robert, Cédric, Almosni, Samy, Cornet, Charles, Léger, Yoan, Perrin, Mathieu, Burin, Jean-Philippe, Létoublon, Antoine, Even, Jacky, Tremblay, Ronan, Beck, Alexandre, Carrère, Hélène, Balocchi, Andrea, Marie, Xavier, Durand, Olivier, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Tyndall National Institute [Cork], Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA), CominLabs, ANR-12-BS03-0002,OPTOSI,Intégration par épitaxie de composants optoélectroniques III-V sur Si(2012), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), and Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)
Subjects: [SPI]Engineering Sciences [physics], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience
Published: 2015

46. Molecular Dynamics Simulations Show That Bound Mg2+ Contributes to Amino Acid and Aminoacyl Adenylate Binding Specificity in Aspartyl-tRNA Synthetase through Long Range Electrostatic Interactions

Author: Thomas Simonson, Damien Thompson, Laboratoire de Biochimie de l'Ecole polytechnique (BIOC), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and Tyndall National Institute [Cork]
Subjects: MESH: Enzyme Stability, Pyrococcus, Aspartate-tRNA Ligase, Crystallography, X-Ray, MESH: Aspartic Acid, Biochemistry, Substrate Specificity, Molecular dynamics, Adenosine Triphosphate, RNA, Transfer, MESH: Adenosine Triphosphate, MESH: Magnesium, Enzyme Stability, Side chain, Aminoacylation, Magnesium, MESH: Adenosine Monophosphate, MESH: Aminoacylation, MESH: Static Electricity, chemistry.chemical_classification, Chemistry, MESH: Archaeal Proteins, Genetic code, Amino acid, Thermodynamics, MESH: Thermodynamics, Asparagine, MESH: Asparagine, Cations, Divalent, Stereochemistry, Archaeal Proteins, Static Electricity, Adenylate kinase, Catalysis, Molecular recognition, MESH: Computer Simulation, MESH: Cations, Divalent, [SDV.BBM]Life Sciences [q-bio]/Biochemistry, Molecular Biology, Computer Simulation, MESH: Aspartate-tRNA Ligase, Molecular Biology, Binding selectivity, Aspartic Acid, Binding Sites, Cell Biology, MESH: Crystallography, X-Ray, MESH: RNA, Transfer, MESH: Catalysis, Adenosine Monophosphate, Crystallography, Enzyme, MESH: Binding Sites, MESH: Substrate Specificity, MESH: Pyrococcus
Abstract: International audience; Molecular recognition between the aminoacyl-tRNA synthetase enzymes and their cognate amino acid ligands is essential for the faithful translation of the genetic code. In aspartyl-tRNA synthetase (AspRS), the co-substrate ATP binds preferentially with three associated Mg2+ cations in an unusual, bent geometry. The Mg2+ cations play a structural role and are thought to also participate catalytically in the enzyme reaction. Co-binding of the ATP x Mg3(2+) complex was shown recently to increase the Asp/Asn binding free energy difference, indicating that amino acid discrimination is substrate-assisted. Here, we used molecular dynamics free energy simulations and continuum electrostatic calculations to resolve two related questions. First, we showed that if one of the Mg2+ cations is removed, the Asp/Asn binding specificity is strongly reduced. Second, we computed the relative stabilities of the three-cation complex and the 2-cation complexes. We found that the 3-cation complex is overwhelmingly favored at ordinary magnesium concentrations, so that the protein is protected against the 2-cation state. In the homologous LysRS, the 3-cation complex was also strongly favored, but the third cation did not affect Lys binding. In tRNA-bound AspRS, the single remaining Mg2+ cation strongly favored the Asp-adenylate substrate relative to Asn-adenylate. Thus, in addition to their structural and catalytic roles, the Mg2+ cations contribute to specificity in AspRS through long range electrostatic interactions with the Asp side chain in both the pre- and post-adenylation states.
Published: 2006

47. Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

Author: Xavier Marie, Cedric Robert, Jacky Even, Hélène Carrère, Olivier Durand, Samy Almosni, Andrea Balocchi, Yoan Léger, Mathieu Perrin, Jean-Philippe Gauthier, Charles Cornet, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Tyndall National Institute [Cork], Laboratoire de physique et chimie des nano-objets (LPCNO), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), ANR, ANR OPTOSI, PONANT project, ANR-05-PADD-0012,PRODDIG,Promotion du Développement Durable par les Indications Géographiques(2005), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), and Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS)
Subjects: Materials science, Photoluminescence, III-V semiconductors, room temperature photoluminescence, Physics and Astronomy (miscellaneous), Crystal growth, quantum dots, Electronic bandstructure, 02 engineering and technology, Substrate (electronics), 01 natural sciences, Gallium arsenide, chemistry.chemical_compound, 0103 physical sciences, carrier dynamics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], Photoluminescence spectroscopy, Optical properties, business.industry, Quantum dots, InGaAsN/GaP, 021001 nanoscience & nanotechnology, Charge recombination, Semimetal, photonics on silicon, dilute nitride, Semiconductor, Conduction bands, chemistry, Semiconductors, Quantum dot, Chemical elements, Optoelectronics, Activation energies, Room-temperature photoluminescence, 0210 nano-technology, Luminescence, business, Time-resolved photoluminescence, Laser applications
Abstract: We report on the structural and optical properties of (In,Ga) AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In, Ga) As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In, Ga) AsN as an efficient active medium monolithically integrated on Si for laser applications. (C) 2014 AIP Publishing LLC.
Published: 2014

48. Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1 − x / GaAs epilayers

Author: Broderick, Christopher, Mazzucato, Simone, Carrère, Hélène, Amand, Thierry, Makhloufi, Hajer, Arnoult, Alexandre, Fontaine, Chantal, Donmez, Omer, Erol, Ayşe, Usman, Muhammad, O'Reilly, Eoin, Marie, Xavier, Tyndall National Institute [Cork], Department of Physics [Cork], University College Cork (UCC), Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Istanbul University, Centre for Quantum Computation and Communication Technology, Australian National University (ANU), University College Cork ( UCC ), Laboratoire de physique et chimie des nano-objets ( LPCNO ), Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique ( CNRS ), Équipe Photonique ( LAAS-PHOTO ), Laboratoire d'analyse et d'architecture des systèmes [Toulouse] ( LAAS ), Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse ( INSA Toulouse ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ) -Centre National de la Recherche Scientifique ( CNRS ) -Université Toulouse III - Paul Sabatier ( UPS ), Institut National des Sciences Appliquées ( INSA ) -Institut National des Sciences Appliquées ( INSA ) -Institut National Polytechnique [Toulouse] ( INP ), Service Techniques et Équipements Appliqués à la Microélectronique ( LAAS-TEAM ), Division of Imaging Sciences, King‘s College London, Institut National des Sciences Appliquées ( INSA ), Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées
Subjects: Condensed Matter::Materials Science, [ SPI.MAT ] Engineering Sciences [physics]/Materials, [ PHYS.COND.CM-MS ] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, [ SPI.OPTI ] Engineering Sciences [physics]/Optics / Photonic, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience; The electron Landé g factor (g∗) is investigated both experimentally and theoretically in a series of GaBixAs1−x/GaAs strained epitaxial layers, for bismuth compositions up to x=3.8%. We measure g∗ via time-resolved photoluminescence spectroscopy, which we use to analyze the spin quantum beats in the polarization of the photoluminescence in the presence of an externally applied magnetic field. The experimental measurements are compared directly to atomistic tight-binding calculations on large supercells, which allows us to explicitly account for alloy disorder effects. We demonstrate that the magnitude of g∗ increases strongly with increasing Bi composition x and, based on the agreement between the theoretical calculations and experimental measurements, elucidate the underlying causes of the observed variation of g∗. By performing measurements in which the orientation of the applied magnetic field is changed, we further demonstrate that g∗ is strongly anisotropic. We quantify the observed variation of g∗ with x, and its anisotropy, in terms of a combination of epitaxial strain and Bi-induced hybridization of valence states due to alloy disorder, which strongly perturbs the electronic structure.
Published: 2014

49. Microscopic gel-liquid interfaces supported by hollow microneedle array for voltammetric drug detection

Author: Joe O'Brien, Cian O'Mathuna, James Scully, Patricia Vazquez, Conor O'Mahony, Grégoire Herzog, Paul Galvin, Alan Blake, Tyndall National Institute [Cork], Laboratoire de Chimie Physique et Microbiologie pour l'Environnement (LCPME), and Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)
Subjects: Stripping voltammetry, stripping voltammetry, Materials science, Calibration curve, micro-interfaces, Drug detection, Materials Chemistry, β-Blocker drug, [CHIM]Chemical Sciences, ITIES, Electrical and Electronic Engineering, Minimally invasive, Instrumentation, Voltammetry, Detection limit, Chromatography, Metals and Alloys, Micro-interfaces, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Electrochemical gas sensor, Linear range, minimally invasive, Cyclic voltammetry, B-blocker drug, Microneedles, beta-Blocker drug
Abstract: International audience; This report describes a method for integration of a gel-liquid interface in hollow microneedles compatible with minimally invasive, electrochemical detection of drugs in vivo. The electrochemical sensor was characterised using cyclic voltammetry with tetraethyl ammonium. The experimental work demonstrated the detection of propranolol as a representative drug in physiological buffer with the microneedle system. A calibration curve for propranolol was built from measurements with differential pulse stripping voltammetry, indicating a sensitivity of 43 nA mu M-1, a limit of detection of 50 nM and a linear range between 50 and 200 nM.
Published: 2014

50. Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon

Author: Olivier Durand, Yanping Wang, Samy Almosni, Mounib Bahri, Julien Stodolna, Antoine Létoublon, Nicolas Bertru, Alain Le Corre, Anne Ponchet, Gilles Patriarche, Ludovic Largeau, Magen, C., Jean-Philippe Gauthier, Cédric Robert, Christophe Levallois, Jacky Even, Alain Rolland, Charles Cornet, Pierre Râle, Laurent Lombez, Jean-François Guillemoles, Fonctions Optiques pour les Technologies de l'informatiON (FOTON), Université de Rennes (UR)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Télécom Bretagne-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre d'élaboration de matériaux et d'études structurales (CEMES), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS), European Synchrotron Radiation Facility (ESRF), Tyndall National Institute [Cork], Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), ANR-11-PRGE-0007,MENHIRS,Intégration monolithique de cellules solaires III-V à haut rendement sur substrats de silicium(2011), ANR-12-BS03-0002,OPTOSI,Intégration par épitaxie de composants optoélectroniques III-V sur Si(2012), ANR-11-JS03-0006,SINPHONIC,Photonique sur Silicium par intégration cohérente d'alliages à base de nitrures dilués(2011), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Université européenne de Bretagne - European University of Brittany (UEB)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-Télécom Bretagne, Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF)-Centre National de la Recherche Scientifique (CNRS)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), and Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Institut de Chimie du CNRS (INC)
Subjects: [SPI.NRJ]Engineering Sciences [physics]/Electric power, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract: International audience
Published: 2014

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