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Nucleation and Chemical Transformation of RuO2 Films Grown on (100) Si Substrates by Atomic Layer Deposition
- Source :
- Chemical Vapor Deposition, Chemical Vapor Deposition, Wiley-VCH Verlag, 2011, 17 (4-6), pp.114-122. ⟨10.1002/cvde.201006882⟩
- Publication Year :
- 2011
- Publisher :
- Wiley, 2011.
-
Abstract
- International audience; We describe the formation of RuO 2 thin films grown using atomic layer deposition (ALD) on (100) Si substrates from Ru(EtCp) 2 and O 2 , and the subsequent influence of annealing temperature and atmosphere on the surface morphology and structure of the deposited layers. The films are characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and electron diffraction (ED). The as-deposited films consist of RuO 2 islands. No significant changes in composition or morphology are observed following annealing in N 2 for 4 h at either 500 or 7008C. Higher temperature annealing in N 2 (8208C, 4 h) results in some modifications to the morphology and structure where ED data indicate the formation of some Ru metal. However, complete transformation from as-deposited RuO 2 to Ru metal is, obtained after annealing in forming gas (95% N 2 /5% H 2) at 4208C for 5 min.
- Subjects :
- Materials science
Ruthenium oxide
Annealing (metallurgy)
Scanning electron microscope
Analytical chemistry
Nucleation
Copper diffusion barriers
02 engineering and technology
010402 general chemistry
01 natural sciences
Atomic force microscopy
Atomic layer deposition
Thin film
Process Chemistry and Technology
[CHIM.MATE]Chemical Sciences/Material chemistry
Surfaces and Interfaces
General Chemistry
021001 nanoscience & nanotechnology
X-ray diffraction
0104 chemical sciences
Electron diffraction
Transmission electron microscopy
Interconnect
0210 nano-technology
Forming gas
Subjects
Details
- ISSN :
- 09481907 and 15213862
- Volume :
- 17
- Database :
- OpenAIRE
- Journal :
- Chemical Vapor Deposition
- Accession number :
- edsair.doi.dedup.....bfe9b305e7d6ff702807a9dcac89a59e