32 results on '"Denais, M."'
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2. Impact of Hot Carrier Degradation Modes on I/O nMOSFETS Aging Prediction.
3. Reliability of Ultra Thin Gate Oxide CMOS Devices: Design Perspective.
4. Insight on physics of Hf-based dielectrics reliability.
5. New perspectives on NBTI in advanced technologies: modelling & characterization.
6. MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown.
7. High-K dielectrics breakdown accurate lifetme assessment methodology.
8. On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET's.
9. Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors.
10. New methodologies of NBTI characterization eliminating recovery effects.
11. Low temperature process flow optimisation for 65nm CMOS mixed-signal applications.
12. Characterization of Vt instability in hafnium based dielectrics by pulse gate voltage techniques [CMOS device applications].
13. New hole trapping characterization during NBTI in 65 nm node technology with distinct nitridation processing [MOSFETs].
14. Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS.
15. Interface traps and oxide traps under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide.
16. New Insights Into Recovery Characteristics During PMOS NBTI and CHC Degradation.
17. Origin of Vt instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies.
18. Review on high-k dielectrics reliability issues.
19. Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide.
20. Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques [CMOS transistors].
21. Hydrogen release and defect generation rate in ultra-thin oxides [MOSFET devices].
22. Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO2 and high-k dielectrics) [MOS devices].
23. Unified Perspective of NBTI and Hot-Carrier Degradation in CMOS using on-the-Fly Bias Patterns.
24. On the 6T-SRAM Cells Degradation Characterization in Ultra-Scaled CMOS Technologies.
25. New Insights on Percolation Theory and the Origin of Oxide Breakdown Thickness and Process Deposition Dependence.
26. Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies.
27. Physical Modeling of Negative Bias Temperature Instabilities for Predictive Extrapolation.
28. New Extensive MVHR Breakdown Models.
29. Characterization and modeling NBTI for design-in reliability.
30. Physical origin of Vt instabilities in high-k dielectrics and process optimisation.
31. Combined effect of NBTI and channel hot carrier effects in pMOSFETs.
32. Single-hole detrapping events in pMOSFETs NBTI degradation.
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