Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques [CMOS transistors].

Details

Language :

English

ISBNs :

9780780385177

Database :

Complementary Index

Journal :

IEEE International Integrated Reliability Workshop Final Report, 2004

Publication Type :

Conference

Accession number :

81162402

Full Text :

https://doi.org/10.1109/IRWS.2004.1422754