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Trapping and detrapping mechanism in hafnium based dielectrics characterized by pulse gate voltage techniques [CMOS transistors].
- Source :
- IEEE International Integrated Reliability Workshop Final Report, 2004; 2004, p125-127, 3p
- Publication Year :
- 2004
Details
- Language :
- English
- ISBNs :
- 9780780385177
- Database :
- Complementary Index
- Journal :
- IEEE International Integrated Reliability Workshop Final Report, 2004
- Publication Type :
- Conference
- Accession number :
- 81162402
- Full Text :
- https://doi.org/10.1109/IRWS.2004.1422754