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Hydrogen release and defect generation rate in ultra-thin oxides [MOSFET devices].

Authors :
Huard, V.
Denais, M.
Monsieur, F.
Source :
IEEE International Integrated Reliability Workshop Final Report, 2004; 2004, p4-6, 3p
Publication Year :
2004

Details

Language :
English
ISBNs :
9780780385177
Database :
Complementary Index
Journal :
IEEE International Integrated Reliability Workshop Final Report, 2004
Publication Type :
Conference
Accession number :
81162376
Full Text :
https://doi.org/10.1109/IRWS.2004.1422726
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