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Among the three primary colors, blue emission in organic light-emitting diodes (OLEDs) are highly important but very difficult to develop. OLEDs have already been commercialized; however, blue OLEDs have the problem of requiring a high applied voltage due to the high-energy of blue emission. Herein, an ultralow voltage turn-on at 1.47 V for blue emission with a peak wavelength at 462 nm (2.68 eV) is demonstrated in an OLED device. This OLED reaches 100 cd/m2, which is equivalent to the luminance of a typical commercial display, at 1.97 V. Blue emission from the OLED is achieved by the selective excitation of the low-energy triplet states at a low applied voltage by using the charge transfer (CT) state as a precursor and the triplet-triplet annihilation, which forms one emissive singlet from two triplet excitons. We found that the essential component for efficient blue emission is a smaller energy difference between the CT state and triplet exciton, accelerating the energy transfer between the two states and achieving the optimal performance by avoiding direct decay from the CT state to the ground state. Our study demonstrates that the developed OLED allows for a much longer operation lifetime than that from a typical blue phosphorescent OLED because the blue emission originates from a stable low-energy triplet exciton that avoids degrading the constituent materials.

The thermodynamic picture describing the formation mechanism of bicontinuous concentric lamellar (

Side reactions of the charge/discharge in Li-ion batteries (LIBs) generate a solid-electrolyte interface (SEI) onto an electrode surface, resulting in the degradation of the lifetime of a cell. The suppression of SEI formations has attracted much attention for achieving longer cyclable LIBs. Our research group has previously reported that few SEI were observed at triple-phase interfaces (TPIs) consisting of BaTiO3, LiCoO2, and electrolyte interfaces in LIBs with excellent cyclability and ultrahigh-speed chargeability. An investigation on the suppression mechanisms of SEI formations at TPIs should yield important information on understanding the undesirable side reactions. Therefore, we have explored the suppression mechanisms of SEI formations by preparing epitaxial thin films and evaluating the surface of the samples after the electrochemical treatment. The results of X-ray photoelectron spectroscopy and scanning electron microscopy with energy-dispersive X-ray analysis measurements suggested that the decomposition of LiPF6 was suppressed at TPIs, implying that the generation of PF5 via the decomposition of LiPF6 contributed to SEI formation.

The current system of assessing food quality via “use-by” dates needs to be replaced by a real-time assessment to prevent blind disposal of consumable food products. Time-temperature history (TTH) based wireless food label, which can wirelessly provide real-time food safety information to the consumer via smartphone, is a viable alternative to the “use-by” dates. However, the cost of wireless TTH-food label has been a major bottleneck in their universal application, especially regarding low-cost, large-quantity products. In addition, such labels should be robust enough to combat external debilitating factors associated with the cold chain system. To overcome these issues, a roll-to-roll (R2R) gravure was exploited to continuously print the wireless TTH-food label platform, in which an NFC antenna and thermistor were realized via all-R2R gravure printing. Then, a Si-chip transponder with an inbuilt microcontroller and R2R printed battery were simply bridged. The resulting wireless TTH-food label thus demonstrated a real-time quality assessment by examining the growth level of foodborne pathogens computed via wirelessly transmitted TTH data to the big data server system.

Nanostructure-induced L10-ordering of twinned single-crystals in CoPt ferromagnetic nanowires on Si/SiO2 substrates is demonstrated, where nanostructure-induced L10-ordering is driven by ultrasmall 10 nm-scale curvature radii of the nanowires.

The orientation of a molecule on a metal surface can impact the performance of electronic devices fabricated from organic materials. This orientation effect of physiosorbed or weakly chemisorbed mo...

Nanodot BaTiO3 supported LiCoO2 cathode thin films can dramatically improve high-rate chargeability and cyclability. The prepared BaTiO3 nanodot is

L10-ordered CoPt with a large coercivity (H c) of 13 kOe was demonstrated on Si/SiO2 substrates by hydrogen annealing. Equiatomic 11.2 nm thick (Co/Pt)4 multilayer thin films were fabricated by electron-beam evaporation and were annealed at 500 °C–900 °C for 10–90 min under an Ar/H2 mixed gas atmosphere. The annealing temperature and time dependences of the crystal structures, magnetic properties, and surface morphologies of the films were systematically analyzed based on the experimental results obtained from grazing incidence X-ray diffraction (GI-XRD), vibrating sample magnetometer, and scanning electron microscope, respectively. Hydrogen annealing effectively promoted the out-of-plane c-axis orientation of L10-ordered CoPt compared to the vacuum annealing according to the GI-XRD patterns. A maximum H c of 13.3 kOe was obtained in L10-ordered CoPt with angular-outlined isolated grains by hydrogen annealing at 800 °C for 60 min, where the c-axis of L10-ordered CoPt was randomly distributed.

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

Single-electron transistors (SETs) represent a new generation of electronic devices with high charge sensitivity, high switching speed, and low power consumption. Here a simple and controlled fabrication of graphene quantum dot (GQD)-based SETs for photon detectors has been demonstrated. The plasma-synthesized GQDs exhibit stable photoluminescence and are successfully used as the Coulomb islands between heteroepitaxial spherical-gold/platinum (HS-Au/Pt) nanogap electrodes. The as-fabricated GQD-SETs enable photon detection with 410 nm excitation owing to the ability of GQDs to generate photoluminescence emission.

Pt-based nanogap electrodes with a gap separation of 20 nm were prepared by electron-beam lithography (EBL). These electrodes were employed to fabricate nanogap gas sensors by combining solution-processed cerium oxide (ceria, CeO2) as the sensing material. Two types (bottom- and top-contact) of nanogap gas sensors were prepared by alternating the EBL and the solution process. Oxygen gas responses were investigated as functions of the gap separation, ceria film thicknesses, and operating temperatures. The sensor response strongly depended on the gap separation and the nanostructure of the cerium oxide film. In the cases of the small gap separation below 35 nm, the nanogap gas sensor exhibits a fast response time of 10 s at a relatively low operating temperature of 573 K; this response time is approximately three orders of magnitude shorter than that exhibited by a microgap sensor under the same measurement conditions. The nanogap gas sensor could also be in use at 1 atm. The improved sensor performance is attributed to the extremely small gap separation of the nanogap electrodes; the reduced gap separation facilitates electron hopping conduction in the ceria film. The proposed approach for fabricating robust and ultrafine nanogap electrodes together with a facile coating method for forming the sensing layer opens up possibilities to develop various nanogap gas sensors with a fast response time.

Organic semiconductor-based thin-film transistors’ (TFTs) charge-carrier mobility has been enhanced up to 25 cm2/V s through the improvement of fabrication methods and greater understanding of the microstructure charge-transport mechanism. To expand the practical feasibility of organic semiconductor-based TFTs, their electrical properties should be easily accessed from the fully printed devices through a scalable printing method, such as a roll-to-roll (R2R) gravure. In this study, four commercially available organic semiconductors were separately formulated into gravure inks. They were then employed in the R2R gravure system (silver ink for printing gate and drain–source electrodes and BaTiO3 ink for printing dielectric layers) for printing 20 × 20 TFT-active matrix with the resolution of 10 pixels per inch on poly(ethylene terephthalate) (PET) foils to attain electrical properties of organic semiconductors a practical printing method. Electrical characteristics (mobility, on–off current ratio, threshold voltage, and transconductance) of the R2R gravure-printed 20 × 20 TFT-active matrices fabricated with organic semiconducting ink were analyzed statistically, and the results showed more than 98% device yield and 50 % electrical variations in the R2R gravure TFT-active matrices along the PET web.

Nanodot BaTiO

We report the fabrication and characterization of copper microelectrodes obtained by a homemade lithography technique and after gold electroless deposition. For the fabrication, planes consisting of arrays of electrodes (black in color) with bow tie shape were designed and printed on a transparent paper (Canson ltd.). Using an embroidery frame with a silk fabric, a photographic emulsion was spread on the silk and simultaneously pressing the Canson paper on it. The system was introduced into a closed box and exposed with a UV light. The designed electrode templates prevented direct exposition of the UV light over copper films and indelible ink was spread over it. After the ink was dried, the copper film is immersed into ferric acid to attack the uncovered copper parts (where there is no ink). In this way, we obtained copper electrodes with initial gap separation of ~142μm and subsequently, they followed electroless deposition of gold to make the copper electrodes to contact. For the characterization, electrical measurements were performed. They present ohmic resistance values in the order of 106 Ω produced by surface scattering of the electrons within the gold microwire and enhanced by oxidation of the copper electrodes.

Rhombic Coulomb diamonds are clearly observed in a chemically anchored Au nanoparticle single-electron transistor. The stability diagrams show stable Coulomb blockade phenomena and agree with the theoretical curve calculated using the orthodox model. The resistances and capacitances of the double-barrier tunneling junctions between the source electrode and the Au core (R1 and C1, respectively), and those between the Au core and the drain electrode (R2 and C2, respectively), are evaluated as 4.5 MΩ, 1.4 aF, 4.8 MΩ, and 1.3 aF, respectively. This is determined by fitting the theoretical curve against the experimental Coulomb staircases. Two-methylene-group short octanedithiols (C8S2) in a C8S2/hexanethiol (C6S) mixed self-assembled monolayer is concluded to chemically anchor the core of the Au nanoparticle at both ends between the electroless-Au-plated nanogap electrodes even when the Au nanoparticle is protected by decanethiol (C10S). This is because the R1 value is identical to that of R2 and corresponds to the tunneling resistances of the octanedithiol chemically bonded with the Au core and the Au electrodes. The dependence of the Coulomb diamond shapes on the tunneling resistance ratio (R1/R2) is also discussed, especially in the case of the rhombic Coulomb diamonds. Rhombic Coulomb diamonds result from chemical anchoring of the core of the Au nanoparticle at both ends between the electroless-Au-plated nanogap electrodes.

L12-ordered CoPt3 and L10-ordered CoPt are formed in electron-beam-deposited (Co/Pt)4 multilayer thin films with and without a Ti underlayer, respectively, on Si/SiO2 substrates by rapid thermal annealing. The crystal structures, magnetic properties, and surface morphologies of the films are investigated by grazing incidence X-ray diffraction (GI-XRD), vibrating sample magnetometer (VSM), and scanning electron microscope (SEM), respectively. In the film without a Ti underlayer, L10-ordered CoPt with an isolated round grain structure is confirmed, showing an in-plane coercivity of 2.7 kOe. In contrast, in the film with a Ti underlayer, L12-ordered CoPt3 is confirmed together with Co-rich A1-disordered CoPt, showing an in-plane coercivity of 500 Oe, which exhibits an angular-outlined continuous film structure. The three sets of experimental results from GI-XRD, VSM, and SEM coincide well with each other.

Author(s): Sun, J; Sapkota, A; Park, H; Wesley, P; Jung, Y; Maskey, BB; Kim, Y; Majima, Y; Ding, J; Ouyang, J; Guo, C; Lefebvre, J; Li, Z; Malenfant, PRL; Javey, A; Cho, G | Abstract: A limitless-length flexible active-matrix implies that virtually any surface can be rendered into an interactive medium when laminated with electrophoretic or organic light-emitting diode sheets. However, performance, cost, and size limitations of current fabrication technologies and semiconducting materials, typically utilized in thin film transistor (TFT) active matrices (TFT-AMs), have hindered progress, thus preventing the realization of fully printed TFT-AMs on a plastic roll. A new high-purity semiconducting single-walled carbon nanotube (s-SWCNT) ink is prepared by first isolating 99.9% pure s-SWCNTs via conjugated polymer extraction, and then utilizing a ligand-exchange method to formulate a novel hydrophilic gravure-compatible semiconducting ink. Based on the s-SWCNT ink, a fully additive manufacturing process using roll-to-roll (R2R) gravure printing enables the fabrication of a flexible TFT-AM, overcoming performance, cost, and size limitations. TFT-AMs with 10 to 40 PPI resolution where average mobility of 0.23 ± 0.12 cm2 V−1 s−1, average on–off ratio of 104.1, and threshold voltage variation of ±13% are attained. As a proof of concept, an inexpensive and flexible electrophoretic display is demonstrated by simply laminating an electrophoretic sheet onto the R2R gravure-printed s-SWCNT-based TFT-AM.

Electroless Au plating (ELGP) on Pd thin films is performed. The ELGP time dependence on the surface morphology is investigated by a scanning electron microscope. Continuous nucleation and growth of hemispherical Au islands are observed as the plating time increases. Heteroepitaxial growth of the electroless plated Au on the Pd surface is confirmed by cross-sectional scanning transmission electron microscope images. Cross-sectional energy-dispersive X-ray spectroscopy reveals interdiffusion between the Pd atoms and the plated Au atoms at room temperature, which allows the formation of Au–Pd alloys. The heteroepitaxial Au growth on Pd is significant for reducing contact resistance of Au/Pd structures.

We investigated reversible switching behaviors of a molecular floating-gate single-electron transistor (MFG-SET). The device consists of a gold nanoparticle-based SET and a few tetra-tert-butyl copper phthalocyanine (ttbCuPc) molecules; each nanoparticle (NP) functions as a Coulomb island. The ttbCuPc molecules function as photoreactive floating gates, which reversibly change the potential of the Coulomb island depending on the charge states induced in the ttbCuPc molecules by light irradiation or by externally applied voltages. We found that single-electron charging of ttbCuPc leads to a potential shift in the Coulomb island by more than half of its charging energy. The first induced device state was sufficiently stable; the retention time was more than a few hours without application of an external voltage. Moreover, the device exhibited an additional state when irradiated with 700 nm light, corresponding to doubly charged ttbCuPc. The life time of this additional state was several seconds, which is much shorter than that of the first induced state. These results clearly demonstrate an alternative method utilizing the unique functionality of the single molecule in nanoelectronics devices, and the potential application of MFG-SETs for investigating molecular charging phenomena.

In this review, we describe recent progress made in the study of nanoparticles characterized by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Basic principles of STM measurements and single-electron tunneling phenomena through a single NP are summarized. We highlight the results of electrical and photonic properties on NPs studied by STM and STS. Because nanoparticles are single-digit nanometre in diameter, a single-electron transport on individual nanoparticles such as Coulomb blockade and resonant tunneling through discrete energy levels are investigated. Photon-emission from NPs is also introduced based on STM measurements. Novel single-nanoparticle functions such as stochastic blinking and one-write erasing behaviours are presented. This review provides an overview of nanoparticle characterization methods based on STM and STS that include the detailed understanding of the electrical and photonics properties of nanoparticles.

The phenylazomethine dendrimer exhibits “atom mimicry,” and its polymerization (and Lewis acid accumulation) is demonstrated., The phenylazomethine dendrimer (DPA) has a layer-by-layer electron density gradient that is an analog of the Bohr atom (atom mimicry). In combination with electron pair mimicry, the polymerization of this atom-mimicking dendrimer was achieved. The valency of the mimicked atom was controlled by changing the chemical structure of the dendrimer. By mimicking a divalent atom, a one-dimensional (1D) polymer was obtained, and by using a planar tetravalent atom mimic, a 2D polymer was obtained. These poly(dendrimer) polymers could store Lewis acids (SnCl2) in their unoccupied orbitals, thus indicating that these poly(dendrimer) polymers consist of a series of nanocontainers.

Tribenzosubporphyrins are boron(III)-chelated triangular bowl-shaped ring-contracted porphyrins that possess a 14π-aromatic circuit. Their flat molecular shapes and discrete molecular orbital diagrams make them ideal for observation by scanning tunneling microscopy (STM). Expanding their applications toward single molecule-based devices requires a fundamental knowledge of single molecular conductance between tribenzosubporphines and the STM metal tip. We utilized a tungsten (W) STM tip to investigate the electronic properties of B-(5-mercaptopentoxy)tribenzosubporphine 1 at the single molecular level. B-(5-mercaptopentoxy)-tribenzosubporphine 1 was anchored to the Au(111) surface via reaction with 1-heptanethiol linkers that were preorganized as a self-assembled monolayer (C7S SAM) on the Au(111) substrate. This arrangement ensured that 1 was electronically decoupled from the metal surface. Differential conductance (dI/dV - V) measurements with the bare W tip exhibited a broad gap region of low conductance and three distinct responses at 2.4,-1.3, and -2.1 V. Bias-voltage-dependent STM imaging of 1 at 65 K displayed a triangle shape at -2.1V-1.3 V and a circle shape at V-2.1 V, reflecting its HOMO and HOMO-1, respectively. In addition, different conductance behaviors were reproducibly observed, which has been ascribed to the adsorption of a tribenzosubporphine-cation on the W tip. When using a W tip doped with preadsorbed tribenzosubporphine-cation, negative differential resistance (NDR) phenomena were clearly observed in a reproducible manner with a peak-to-valley ratio of 2.6, a value confirmed by spatial mapping conductance measurements. Collectively, the observed NDR phenomena have been attributed to effective molecular resonant tunneling between a neutral tribenzosubporphine anchored to the metal surface and a tribenzosubporphine cation adsorbed on a W tip.

In this work, we report the mechanical reorientationof thiolated ferromagnetic microspheres bridging a pairof gold electrodes under an external magnetic field. Whenan external magnetic field (7 kG) is applied during themeasurement of the current–voltage characteristics of a carboxylferromagnetic microsphere (4 μm diameter) attachedto two gold electrodes by self-assembled monolayers(SAMs) of octane dithiol (C8H18S2), the current signal isdistorted. Rather than due to magnetoresistance, this effectis caused by a mechanical reorientation of the ferromagneticsphere, which alters the number of SAMs between thesphere and the electrodes and therefore affects conduction.To study the physical reorientation of the ferromagneticparticles, we measure their hysteresis loops while suspendedin a liquid solution.Keywords Magnetic microparticles

Robust nanogap electrodes for nanodevices with a separation of 3.0 ± 1.7 nm were simultaneously mass-produced at a yield of 90% by a combination of electron beam lithography (EBL) and electroless gold plating (EGP). Nanogap electrodes demonstrated their robustness as they maintained their structure unchanged up to temperatures of 170 °C, during the isotropic oxygen plasma ashing removal of the amorphous carbon overlayer resulting from scanning electron microscopy observations, therefore maintaining their surface reactivity for EGP and formation of a self-assembled monolayer. A gold layer grows over the electrode surface during EGP, narrowing the separation between the electrodes; growth stops around 3 nm due to a self-termination phenomenon. This is the main factor in the high yield and reproducibility of the EGP process because it prevents contact between the electrodes. A 90% yield is achieved by also controlling the etching and physisorption of gold clusters, which is accomplished by reduction of triiodide ions and heat treatment of the EGP solution, respectively. A mixed self-assembled monolayer of octanethiol and decanedithiol can be formed at the surface of the nanogap electrodes after the oxygen plasma treatment, and decanethiol-protected Au nanoparticles were chemisorbed between the self-terminated nanogap electrodes via decanedithiol. Chemically assembled single-electron transistors based on the nanogap electrodes exhibit ideal, stable, and reproducible Coulomb diamonds.

An n-type organic semiconductor 2:3,5:6-bis(1,1-dicyanoethylene-2,2-dithiolate)-quinone (BDQ) has been successfully synthesised and characterised. The single crystal structure of BDQ, determined by single-crystal X-ray crystallography, indicated that BDQ is a planar molecule with strong face-to-face π-π stacking (3.40 Å) and S···S interactions (3.66 Å) between neighbouring molecules, which might be in favour of the effective charge transport. The UV-vis spectrum shows that BDQ has shoulder absorption up to 550 nm (2.25 eV). The electrochemical property displays that the HOMO-LUMO gap of BDQ obtained from the half-wave redox potential is 1.92 eV. The displacement current measurement of BDQ-based devices is demonstrated and discussed.

In this work, we study the crystallization and electrical resistivity of the formed oxides in a Cu/SiO2/Si thin film after thermal oxidation by ex-situ annealing at different temperatures up to 1000 °C. Upon increasing the annealing temperature, from the X ray diffractogram the phase evolution Cu → Cu + Cu2O → Cu2O → Cu2O + CuO → CuO was detected. Pure Cu2O films are obtained at 200 °C, whereas uniform CuO films without structural surface defects such as terraces, kinks, porosity or cracks are obtained in the temperature range 300–550 °C. In both oxides, crystallization improves with annealing temperature. A resistivity phase diagram, which is obtained from the current–voltage response, is presented here. The resistivity was expected to increase linearly as a function of the annealing temperature due to evolution of oxides. However, anomalous decreases are observed at different temperatures ranges, this may be related to the improvement of the crystallization and crystallite size when the temperature increases.

Double-gate single-electron transistors (SETs) were fabricated by chemical assembling using electroless gold-plated nanogap electrodes and chemisorbed chemically synthesized gold nanoparticles. The fabricated SET showed periodic and stable Coulomb oscillations under application of voltages of both gates. The sole SET also exhibited all two-input logic operations-XOR, XNOR, NAND, OR, NOR, and AND-with an on/off ratio of 10(2). This demonstrates the potential of chemical assembling to give highly stable SETs exhibiting all logic operations.

LaCaBaCu3O7 is a high critical temperature superconductor (HTS) below the Tc = 80 K and its structure is similar to that of YBCO. In this work we study the effect in the irreversibility line and the Curie-Weiss temperature of this superconductor after borate (BO3) 3- doping (LaCaBaCu3-x(BO3)xO7-δ x=0.2 and 0.3). Interestingly, borate doping enhances the irreversibility line and this effect is probably caused from alteration the arrangement of the oxygen atoms in the crystalline structure. Moreover, the Curie-Weiss temperature (□p) in the normal state increases with doping concentration. Calculated □p for pure LaCaBaCu3O7 is around -98K, this value increases to -75 and 49 K for x=0.2 and 0.3 respectively and indicating transition from antiferromagnetic to ferromagnetic coupling between ions in the structure. This study provides additional data for the magnetic characteristics of doped like-123 crystalline structures with oxyanions.