Back to Search
Start Over
Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers
- Source :
- Science and Technology of Advanced Materials, Vol 18, Iss 1, Pp 374-380 (2017)
- Publication Year :
- 2017
- Publisher :
- Taylor & Francis Group, 2017.
-
Abstract
- Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO$ _x $), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.
Details
- Language :
- English
- ISSN :
- 14686996 and 18785514
- Volume :
- 18
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Science and Technology of Advanced Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.2237463d77c4db09362eeef252dc3d5
- Document Type :
- article
- Full Text :
- https://doi.org/10.1080/14686996.2017.1320190