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Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a $\SI{10}{nm}$ thick film of the material would only absorb about 1 - 20\% of light between 500 - 1700 nm., 11 pages + 10 pages appendix, 5 figures + 5 figures appendix, submitting to IOP SUST

Metal halide perovskite solar cells (PSCs) are an emerging photovoltaic technology with the potential to disrupt the mature silicon solar cell market. Great improvements in device performance over the past few years, thanks to the development of fabrication protocols1-3, chemical compositions4,5 and phase stabilization methods6-10, have made PSCs one of the most efficient and low-cost solution-processable photovoltaic technologies. However, the light-harvesting performance of these devices is still limited by excessive charge carrier recombination. Despite much effort, the performance of the best-performing PSCs is capped by relatively low fill factors and high open-circuit voltage deficits (the radiative open-circuit voltage limit minus the high open-circuit voltage)11. Improvements in charge carrier management, which is closely tied to the fill factor and the open-circuit voltage, thus provide a path towards increasing the device performance of PSCs, and reaching their theoretical efficiency limit12. Here we report a holistic approach to improving the performance of PSCs through enhanced charge carrier management. First, we develop an electron transport layer with an ideal film coverage, thickness and composition by tuning the chemical bath deposition of tin dioxide (SnO2). Second, we decouple the passivation strategy between the bulk and the interface, leading to improved properties, while minimizing the bandgap penalty. In forward bias, our devices exhibit an electroluminescence external quantum efficiency of up to 17.2 per cent and an electroluminescence energy conversion efficiency of up to 21.6 per cent. As solar cells, they achieve a certified power conversion efficiency of 25.2 per cent, corresponding to 80.5 per cent of the thermodynamic limit of its bandgap.

Semitransparent organic solar cells (ST-OSCs) have garnered strong interest for building integrated photovoltaics (PV) and wearable electronics. Although seen as an appealing low-cost PV technology...

Infrared-to-visible photon upconversion could benefit applications such as photovoltaics, infrared sensing, and bioimaging. Solid-state upconversion based on triplet exciton annihilation sensitized by nanocrystals is one of the most promising approaches, albeit limited by relatively weak optical absorption. Here, we integrate the upconverting layers into a Fabry-Perot microcavity with quality factor Q = 75. At the resonant wavelength λ = 980 nm, absorption increases 74-fold and we observe a 227-fold increase in the intensity of upconverted emission. The threshold excitation intensity is reduced by 2 orders of magnitude to a subsolar flux of 13 mW/cm2. We measure an external quantum efficiency of 0.06 ± 0.01% and a 2.2-fold increase in the generation yield of upconverted photons. Our work highlights the potential of triplet-triplet annihilation-based upconversion in low-intensity sensing applications and demonstrates the importance of photonic designs in addition to materials engineering to improve the efficiency of solid-state upconversion.

We describe a two-step, all solution process for converting lead selenide thin films into methylammonium lead iodide (MAPbI3) perovskite material. PbSe was deposited on fluorine-doped tin oxide (FTO), and treated with polyiodide solution to form lead iodide. The solvent used was mixtures of isopropanol and water at different ratios. Conversion parameters, namely solvent ratio, potassium iodide (KI) concentration, iodine (I2) concentration and conversion temperature were optimized. A second conversion step, from PbI2 to MAPbI3, was carried out by treating the films with a solution of methylammonium iodide (MAI) dissolved in isopropanol. Different morphologies of MAPbI3 were achieved by converting PbI2 films with different morphologies, and also by converting PbI2 films using solutions of variable MAI concentration. Effect of grain size on UV-Vis light absorption and photoluminescence (PL) is discussed: while absorption was found to be lower for the films with smaller grain size, PL was higher, suggesting less non-radiative recombination traps in films containing smaller grain perovskites.

Nicole Moody, Samuel Sesena, Dane W. deQuilettes, Benjia Dak Dou, Richard Swartwout, Anna Johnson, Udochukwu Eze, Roberto Brenes, Matthew Johnston, Vladimir Bulovic, and Moungi G. Bawendi are members of Tata-MIT GridEdge Solar, an interdisciplinary research program at the Massachusetts Institute of Technology working toward scalable design and manufacturing of lightweight, flexible solar cells. Joseph T. Buchman and Christy L. Haynes are part of the Center for Sustainable Nanotechnology, a multi-institutional partnership aimed at understanding the fundamental chemical and physical processes that govern the transformations and interactions of nanoparticles in the environment.

Despite rapid advancements in power conversion efficiency in the last decade, perovskite solar cells still perform below their thermodynamic efficiency limits. Non-radiative recombination, in particular, has limited the external radiative efficiency and open circuit voltage in the highest performing devices. We review the historical progress in enhancing perovskite external radiative efficiency and determine key strategies for reaching high optoelectronic quality. Specifically, we focus on non-radiative recombination within the perovskite layer and highlight novel approaches to reduce energy losses at interfaces and through parasitic absorption. By strategically targeting defects, it is likely that the next set of record-performing devices with ultra-low voltage losses will be achieved.

Incorporating a low dimensional LD perovskite capping layer on top of a perovskite absorber, improves the stability of perovskite solar cells PSCs . However, in the case of mixed halide perovskites, which can undergo halide segregation into single halide perovskites, a systematic study of the capping layer s effect on mixed halide perovskite absorber is still lacking. This study bridges this gap by investigating how the 1D perovskite capping layers on top of MAPb IxBr1 amp; 8722;x 3 x 0, 0.25, 0.5, 0.75, 1 absorbers affect the films stability. We utilize a new method, dissimilarity matrix, to investigate the image based stability performance of capping absorber pair compositions across time. This method overcomes the challenge of analyzing various film colors due to bandgap difference in mixed halide perovskites. We also discover that the intrinsic absorber stability plays an important role in the overall stability outcome, despite the capping layer s support. Within the 55 unique capping absorber pairs, we observe a notable 1D perovskite material, 1 methoxynaphthalene 2 ethylammonium chloride 2MeO NEA Cl or 9 Cl , that improves the stability of MAPbI3 and MAPb I0.5Br0.5 3 by at least 8 and 1.5 times, respectively, compared to bare films under elevated humidity and temperature. Surface photovoltage results also show that the accumulation of electrostatic charges on the film surface depends on the capping layer type, which could contribute to the acceleration deceleration of degradation

Summary Today’s approach to deploying solar photovoltaics (PV) implicitly assumes that module technology is fixed. Solar panels are installed and expected to operate for the system life of 30 years or more. However, many PV technologies are improving rapidly along several dimensions, including cost, power conversion efficiency, and reliability. Periodic module replacement or planned repowering takes advantage of this technological improvement and counteracts predictable degradation. Here, we show that a module replacement strategy allows a competitive levelized cost of electricity to be achieved with an initial module lifetime of less than 15 years, assuming backward compatibility with the original system design. We also assess the life-cycle environmental impacts of module replacement and find that all commercial PV technologies offer benefits in the majority of impact categories, regardless of the replacement strategy, compared to today’s electric generation mix. Module replacement can thus accelerate the market introduction and decarbonization impact of emerging PV technologies that have achieved a competitive module efficiency (≥20%), cost (≤$0.30/W), and lifetime (≥10 years) and have the potential to improve further on all three metrics but lack decades-long field deployment experience.

The success of halide perovskites in a host of optoelectronic applications is often attributed to their long photoexcited carrier lifetimes, which has led to charge-carrier recombination processes being described as unique compared to other semiconductors. Here, we integrate recent literature findings to provide a critical assessment of the factors we believe are most likely controlling recombination in the most widely studied halide perovskite systems. We focus on four mechanisms that have been proposed to affect measured charge carrier recombination lifetimes, namely: (1) recombination via trap states, (2) polaron formation, (3) the indirect nature of the bandgap (e.g., Rashba effect), and (4) photon recycling. We scrutinize the evidence for each case and the implications of each process on carrier recombination dynamics. Although they have attracted considerable speculation, we conclude that multiple trapping or hopping in shallow trap states, and the possible indirect nature of the bandgap (e.g., Rashba effect), seem to be less likely given the combined evidence, at least in high-quality samples most relevant to solar cells and light-emitting diodes. On the other hand, photon recycling appears to play a clear role in increasing apparent lifetime for samples with high photoluminescence quantum yields. We conclude that polaron dynamics are intriguing and deserving of further study. We highlight potential interdependencies of these processes and suggest future experiments to better decouple their relative contributions. A more complete understanding of the recombination processes could allow us to rationally tailor the properties of these fascinating semiconductors and will aid the discovery of other materials exhibiting similarly exceptional optoelectronic properties.

Stabilization of the crystal phase of inorganic/organic lead halide perovskites is critical for their high performance optoelectronic devices. However, due to the highly ionic nature of perovskite crystals, even phase stabilized polycrystalline perovskites can undergo undesirable phase transitions when exposed to a destabilizing environment. While various surface passivating agents have been developed to improve the device performance of perovskite solar cells, conventional deposition methods using a protic polar solvent, mainly isopropyl alcohol (IPA), results in a destabilization of the underlying perovskite layer and an undesirable degradation of device properties. We demonstrate the hidden role of IPA in surface treatments and develop a strategy in which the passivating agent is deposited without destabilizing the high quality perovskite underlayer. This strategy maximizes and stabilizes device performance by suppressing the formation of the perovskite δ-phase and amorphous phase during surface treatment, which is observed using conventional methods. Our strategy also effectively passivates surface and grain boundary defects, minimizing non-radiative recombination sites, and preventing carrier quenching at the perovskite interface. This results in an open-circuit-voltage loss of only ∼340 mV, a champion device with a power conversion efficiency of 23.4% from a reverse current–voltage scan, a device with a record certified stabilized PCE of 22.6%, and enhanced operational stability. In addition, our perovskite solar cell exhibits an electroluminescence external quantum efficiency up to 8.9%.

This manuscript introduces solvent toxicity in solar perovskite ink chemistries as a major technoeconomic limitation for the growth of the technology. More specifically, the capital and operational cost of handling such toxic chemicals to maintain a safe working environment can lead to significant added costs. As all record power conversion efficiency devices to date have been solution processed, this represents a major challenge for the perovskite optoelectronic field and of printed electronics as a whole. Knowing this limitation, we propose that solvent selections for ink chemistries should be more quantitative and focus on lowering toxicity. To this end, we show that a Hansen solubility model is effective in predicting ink systems using lower toxicity solvents. We also show that inks formed from this method are applicable for high-speed slot-die coating, limiting the need for long anneal times. These methods and results demonstrate a useful framework for quantitatively engineering solvent systems with reduced toxicity while simultaneously maintaining and surpassing performance. It therefore provides a pathway and major step forward towards the commercialization of solution coated perovskite technologies.

Molecules can serve as ultimate building blocks for extreme nanoscale devices. This requires their precise integration into functional heterojunctions, most commonly in the form of metal-molecule-metal architectures. Structural damage and nonuniformities caused by current fabrication techniques, however, limit their effective incorporation. Here, we present a hybrid fabrication approach enabling uniform and active molecular junctions. A template-stripping technique is developed to form electrodes with sub-nanometer smooth surfaces. Combined with dielectrophoretic trapping of colloidal nanorods, uniform sub-5 nm junctions are achieved. Uniquely, in our design, the top contact is mechanically free to move under an applied stimulus. Using this, we investigate the electromechanical tuning of the junction and its tunneling conduction. Here, the molecules help control sub-nanometer mechanical modulation, which is conventionally challenging due to instabilities caused by surface adhesive forces. Our versatile approach provides a platform to develop and study active molecular junctions for emerging applications in electronics, plasmonics, and electromechanical devices.

The coherence of collective modes, such as phonons and polarons, and their modulation of electronic states is long sought in complex systems, which is a crosscutting issue in photovoltaics and quantum electronics. In photovoltaic cells and lasers based on metal halide perovskites, the presence of polarons, i.e., photocarriers dressed by the macroscopic motion of charged lattice, assisted by terahertz (THz) longitudinal-optical (LO) phonons, has been intensely studied yet is still debated. This may be key for explaining the remarkable properties of the perovskite materials, e.g., defect tolerance, long charge lifetimes, and diffusion lengths. Here we use the intense single-cycle THz pulse with peak electric field up to ${E}_{\mathrm{THz}}=1000$ kV/cm to drive coherent polaronic band-edge oscillations at room temperature in ${\mathrm{CH}}_{3}{\mathrm{NH}}_{3}{\mathrm{PbI}}_{3}\phantom{\rule{4pt}{0ex}}({\mathrm{MAPbI}}_{3})$. We reveal the oscillatory behavior is dominated by a specific quantized lattice vibration mode at ${\ensuremath{\omega}}_{\mathrm{LO}}\ensuremath{\sim}4\phantom{\rule{0.16em}{0ex}}\mathrm{THz}$, which is both dipole and momentum forbidden. THz-driven coherent polaron dynamics exhibits distinguishing features: room temperature coherent oscillations at ${\ensuremath{\omega}}_{\mathrm{LO}}$ longer than 1 ps in both single crystals and thin films, mode-selective modulation of different band-edge states assisted by electron-phonon interaction, and dynamic mode splitting at low temperature due to entropy and anharmonicity of organic cations. Our results demonstrate intense THz-driven coherent band-edge modulation is a powerful probe of electron-lattice coupling phenomena and polaronic quantum control in perovskites.

Self-assembled organic molecules of cyanine dye are proposed for room-temperature, low-cost scalable polaritonic devices after first result of stabilized photoluminescence of solid-state film and polariton emission from metallic microcavities achieved through integration of hygroscopic stabilizers.

Improving the long-term stability of perovskite solar cells is critical to the deployment of this technology. Despite the great emphasis laid on stability-related investigations, publications lack consistency in experimental procedures and parameters reported. It is therefore challenging to reproduce and compare results and thereby develop a deep understanding of degradation mechanisms. Here, we report a consensus between researchers in the field on procedures for testing perovskite solar cell stability, which are based on the International Summit on Organic Photovoltaic Stability (ISOS) protocols. We propose additional procedures to account for properties specific to PSCs such as ion redistribution under electric fields, reversible degradation and to distinguish ambient-induced degradation from other stress factors. These protocols are not intended as a replacement of the existing qualification standards, but rather they aim to unify the stability assessment and to understand failure modes. Finally, we identify key procedural information which we suggest reporting in publications to improve reproducibility and enable large data set analysis., This article is based upon work from COST Action StableNextSol MP1307 supported by COST (European Cooperation in Science and Technology). M.V.K., E.A.K., V.B. and A.O. thank the financial support of the United States – Israel Binational Science Foundation (grant no. 2015757). E.A.K., A.A. and I.V.-F. acknowledge partial support from the SNaPSHoTs project in the framework of the German-Israeli bilateral R&D cooperation in the field of applied nanotechnology. M.S.L. thanks the financial support of National Science Foundation (ECCS, award #1610833). S.C., M.Manceau and M.Matheron thank the financial support of European Union’s Horizon 2020 research and innovation programme under grant agreement no 763989 (APOLO project). F.D.R. and T.M.W. would like to acknowledge the support from the Engineering and Physical Sciences Research Council (EPSRC) through the SPECIFIC Innovation and Knowledge Centre (EP/N020863/1) and express their gratitude to the Welsh Government for their support of the Ser Solar programme. P.A.T. acknowledges financial support from the Russian Science Foundation (project No. 19-73-30020). J.K. acknowledges the support by the Solar Photovoltaic Academic Research Consortium II (SPARC II) project, gratefully funded by WEFO. M.K.N. acknowledges financial support from Innosuisse project 25590.1 PFNM-NM, Solaronix, Aubonne, Switzerland. C.-Q.M. would like to acknowledge The Bureau of International Cooperation of Chinese Academy of Sciences for the support of ISOS11 and the Ministry of Science and Technology of China for the financial support (no. 2016YFA0200700). N.G.P. acknowledges financial support from the National Research Foundation of Korea (NRF) grants funded by the Ministry of Science, ICT Future Planning (MSIP) of Korea under contracts NRF-2012M3A6A7054861 and NRF-2014M3A6A7060583 (Global Frontier R&D Program on Center for Multiscale Energy System). CSIRO’s contribution to this work was conducted with funding support from the Australian Renewable Energy Agency (ARENA) through its Advancing Renewables Program. A.F.N gratefully acknowledges support from FAPESP (Grant 2017/11986-5) and Shell and the strategic importance of the support given by ANP (Brazil’s National Oil, Natural Gas and Biofuels Agency) through the R&D levy regulation. Y.-L.L. and Q.B. acknowledge support from the National Science Foundation Division of Civil, Mechanical and Manufacturing Innovation under award no. 1824674. S.D.S. acknowledges the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (HYPERION, grant agreement no. 756962), and the Royal Society and Tata Group (UF150033). The work at the National Renewable Energy Laboratory was supported by the US Department of Energy (DOE) under contract DE-AC36-08GO28308 with Alliance for Sustainable Energy LLC, the manager and operator of the National Renewable Energy Laboratory. The authors (J.J.B, J.M.L., M.O.R, K.Z.) acknowledge support from the ‘De-risking halide perovskite solar cells’ program of the National Center for Photovoltaics, funded by the US Department of Energy, Office of Energy Efficiency and Renewable Energy, Solar Energy Technology Office. The views expressed in the article do not necessarily represent the views of the DOE or the US Government. H.J.S. acknowledges the support of EPSRC UK, Engineering and Physical Sciences Research Council. V.T. and M.Madsen acknowledge ‘Villum Foundation’ for funding of the project CompliantPV, under project no. 13365. M.Madsen acknowledges Danmarks Frie Forskningsfond, DFF FTP for funding of the project React-PV, no. 8022-00389B. M.G. and S.M.Z. thank the King Abdulaziz City for Science and technology (KACST) for financial support. S.V. acknowledges TKI-UE/Ministry of Economic Affairs for financial support of the TKI-UE toeslag project POP-ART (no. 1621103). RC thanks the grants for Development of New Faculty Staff, Ratchadaphiseksomphot Endowment Fund. A.D.C. gratefully acknowledges funding from the European Union’s Horizon 2020 Research and Innovation Program (grant agreement no. 785219-GrapheneCore2 and no. 764047-ESPResSo). M.L.C. and H.X. acknowledges the support from Spanish MINECO for the grant GraPErOs (ENE2016-79282-C5-2-R), the OrgEnergy Excellence Network CTQ2016-81911- REDT, the Agència de Gestiód’Ajuts Universitaris i de Recerca (AGAUR) for the support to the consolidated Catalonia research group 2017 SGR 329 and the Xarxa de Referència en Materials Avançats per a l’Energia (Xarmae). ICN2 is supported by the Severo Ochoa program from Spanish MINECO (Grant no. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya.

Although two-terminal perovskite-silicon tandem solar cells have rapidly increased in efficiency, they have only been demonstrated with n-type silicon, which currently constitutes less than 5% of the global photovoltaics market. In this paper, we realize the first two-terminal perovskite tandem with p-type silicon by developing a recombination contact that enables voltage addition without damaging either subcell. We find that silicon interband recombination contacts are limited by a SiO x charge-extraction barrier, which forms during oxidative top-cell fabrication. A sputtered 30-nm indium tin oxide layer is found to protect the silicon cell surface from oxidation, while forming a recombination contact with the p-type nickel oxide hole transport layer for the perovskite top cell. Using this recombination contact we achieve voltage addition between the perovskite top cell and aluminum back-surface field p-type silicon bottom cell. We also find that minimizing moisture on the nickel oxide surface is important for achieving a stable open-circuit voltage under illumination. The recombination contact developed herein could play an important role in near-future developments.

This manuscript introduces solvent toxicity in solar perovskite ink chemistries as a major technoeconomic limitation for the growth of the technology. More specifically, the capital and operational cost of handling such toxic chemicals to maintain a safe working environment can lead to significant added costs. As all record power conversion efficiency devices to date have been solution processed, this represents a major challenge for the perovskite optoelectronic field and of printed electronics as a whole. Knowing this limitation, we propose that solvent selections for ink chemistries should be more quantitative and focus on lowering toxicity. To this end, we show that a Hansen solubility model is effective in predicting ink systems using lower toxicity solvents. We also show that inks formed from this method are applicable for high-speed slot-die coating, limiting the need for long anneal times. These methods and results demonstrate a useful framework for quantitatively engineering solvent systems with reduced toxicity while simultaneously maintaining and surpassing performance. It therefore provides a pathway and major step forward towards the commercialization of solution coated perovskite technologies.

Thin films of colloidal quantum dots (QDs) are promising solar photovoltaic (PV) absorbers in spite of their disordered nature. Disordered PV materials face a power conversion efficiency limit lower than the ideal Shockley–Queisser bound because of increased radiative recombination through band-tail states. However, investigations of band tailing in QD solar cells have been largely restricted to indirect measurements, leaving their ultimate efficiency in question. Here we use photothermal deflection spectroscopy (PDS) to robustly characterize the absorption edge of lead sulfide (PbS) QD films for different bandgaps, ligands, and processing conditions used in leading devices. We also present a comprehensive overview of band tailing in many commercial and emerging PV technologies—including c-Si, GaAs, a-Si:H, CdTe, CIGS, and perovskites—then calculate detailed-balance efficiency limits incorporating Urbach band tailing for each technology. Our PDS measurements on PbS QDs show sharp exponential band tails, w...

Metal halide perovskites are generating enormous excitement for use in solar cells and light-emission applications, but devices still show substantial non-radiative losses. Here, we show that by combining light and atmospheric treatments, we can increase the internal luminescence quantum efficiencies of polycrystalline perovskite films from 1% to 89%, with carrier lifetimes of 32 μs and diffusion lengths of 77 μm, comparable with perovskite single crystals. Remarkably, the surface recombination velocity of holes in the treated films is 0.4 cm/s, approaching the values for fully passivated crystalline silicon, which has the lowest values for any semiconductor to date. The enhancements translate to solar cell power-conversion efficiencies of 19.2%, with a near-instant rise to stabilized power output, consistent with suppression of ion migration. We propose a mechanism in which light creates superoxide species from oxygen that remove shallow surface states. The work reveals an industrially scalable post-treatment capable of producing state-of-the-art semiconducting films. Metal halide perovskites are exciting materials for low-cost optoelectronic devices such as solar cells and LEDs. In order to reach the theoretical efficiency limits for both applications, any parasitic non-radiative charge-carrier recombination losses, such as those mediated by carrier trapping, must be eliminated. At present, perovskite materials still suffer from substantial non-radiative decay, particularly under solar illumination conditions, and are therefore yet to reach their full potential. Perovskite single crystals have very low trap concentrations but their controlled growth into devices does not lend themselves to the advantages offered by solution-processing thin films such as roll-to-roll depositions. Here, we demonstrate the use of light and atmospheric treatments on polycrystalline perovskite films, resulting in minimal non-radiative losses and properties approaching those of perovskite single crystals and even the best crystalline semiconductors reported to date. The authors demonstrate the use of light and atmospheric treatments on polycrystalline perovskite thin films, resulting in properties approaching those of the best crystalline semiconductors reported to date. The results translate to exceptional photovoltaic device performances with rapid rises to stabilized power output consistent with an inhibition of ionic migration.

The effects of large external fields on semiconductor nanostructures could reveal much about field-induced shifting of electronic states and their dynamical responses and could enable electro-optic device applications that require large and rapid changes in optical properties. Studies of quasi-dc electric field modulation of quantum dot (QD) properties have been limited by electrostatic breakdown processes observed under high externally applied field levels. To circumvent this, here we apply ultrafast terahertz (THz) electric fields with switching times on the order of 1 ps. We show that a pulsed THz electric field, enhanced by a microslit field enhancement structure (FES), can strongly manipulate the optical absorption properties of a thin film of CdSe and CdSe-CdS core-shell QDs on the subpicosecond time scale with spectral shifts that span the visible to near-IR range. Numerical simulations using a semiempirical tight binding model show that the band gap of the QD film can be shifted by as much a 79 meV during these time scales. The results allow a basic understanding of the field-induced shifting of electronic levels and suggest electro-optic device applications.

The success of halide perovskites in a host of optoelectronic applications is often attributed to their long photoexcited carrier lifetimes, which has led to charge-carrier recombination processes being described as unique compared to other semiconductors. Here, we integrate recent literature findings to provide a critical assessment of the factors we believe are most likely controlling recombination in the most widely studied halide perovskite systems. We focus on four mechanisms that have been proposed to affect measured charge carrier recombination lifetimes, namely: (1) recombination via trap states, (2) polaron formation, (3) the indirect nature of the bandgap (e.g., Rashba effect), and (4) photon recycling. We scrutinize the evidence for each case and the implications of each process on carrier recombination dynamics. Although they have attracted considerable speculation, we conclude that multiple trapping or hopping in shallow trap states, and the possible indirect nature of the bandgap (e.g., Rashba effect), seem to be less likely given the combined evidence, at least in high-quality samples most relevant to solar cells and light-emitting diodes. On the other hand, photon recycling appears to play a clear role in increasing apparent lifetime for samples with high photoluminescence quantum yields. We conclude that polaron dynamics are intriguing and deserving of further study. We highlight potential interdependencies of these processes and suggest future experiments to better decouple their relative contributions. A more complete understanding of the recombination processes could allow us to rationally tailor the properties of these fascinating semiconductors and will aid the discovery of other materials exhibiting similarly exceptional optoelectronic properties.

Self-absorption of internally radiated photons (``photon recycling'') is common in high-quality, direct-gap semiconductors, and can yield increased photovoltage in solar cells and enhanced emission efficiency in LEDs. For perovskite semiconductors, photon recycling is relatively unexplored, especially for devices under operating conditions. The authors develop a model to quantify the extent of photon recycling in state-of-the-art perovskite solar cells of varying nonradiative loss and geometry. They present clear experimental targets for material optoelectronic quality to harness photon recycling in solar cells, with major implications for achieving low-threshold lasing and efficient LEDs.

High internal quantum efficiency semiconductor nanocrystal (NC)-based photon upconversion devices are currently based on a single monolayer of active NCs. Devices are therefore limited in their external quantum efficiency based on the low number of photons absorbed. Increasing the number of photons absorbed is expected to increase the upconversion efficiency, yet experimentally increasing the number of layers does not appreciably increase the upconverted light output. We unravel this mystery by combining kinetic modeling and transient photoluminescence spectroscopy. The inherent energetic disorder stemming from the polydispersity of the NCs means that the kinetics are governed by a stochastic transfer matrix. By drawing the rates from a probabilistic distribution and constructing a reaction network with realistic connectivity, we are able to fit complex photoluminescence traces with a very simple model. We use this model to explain the thickness-dependent performance of the upconversion devices and can attribute the reduced efficiencies to the low excitonic diffusivity of the exciton within the NC layers and increased back transfer of the created singlets from the organic annihilator rubrene. We suggest some avenues for overcoming these limitations in future devices.

We explore the dynamic interaction of charge carriers between band-edge states and sub-band trap states in PbS quantum dot (QD) solids using time-resolved spectroscopy. In monodisperse arrays of 4- to 5-nm diameter PbS QDs, we observe an optically active trap state ∼100–200 meV below the band edge that occurs at a frequency of 1 in ∼2,500 QDs. Uncoupled QD solids with oleic acid ligands show trap-to-ground-state recombination that resembles Auger recombination. In electronically coupled QD solids, we observe entropically driven uphill thermalization of trapped charge carriers from the trap state to the band edge via two distinct mechanisms: Auger-assisted charge transfer (∼35 ps) and thermally activated hopping (∼500 ps). Photophysical characterization combined with atomistic simulations and high-resolution electron microscopy suggest that these states arise from epitaxially fused pairs of QDs rather than electron or hole traps at the QD surface, offering new strategies for improving the optoelectronic performance of QD materials., Department of Energy (DOE), Office of Basic Energy Sciences (Awards DE-SC0010538,DE-SC0019345), National Science Foundation (Awards 1452857 and 1122374)

Intensive research of hybrid metal-halide perovskite materials for use as photoactive materials has resulted in an unmatched increase in the power conversion efficiency of perovskite photovoltaics (PVs) over the last couple of years. Now that lab-fabricated perovskite devices rival the efficiency of silicon PVs, the next challenge of scalable mass manufacturing of large perovskite PV panels remains to be solved. For that purpose, it is still unclear which manufacturing method will provide the lowest processing cost and highest quality solar cells. Vapor deposition has been proven to work well for perovskites as a controllable and repeatable thin-film deposition technique but with processing speeds currently too slow to adequately lower the production costs. Addressing this challenge, in the present work, we demonstrate a high-speed vapor transport processing technique in a custom-built reactor that produces high-quality perovskite films with unprecedented deposition speed exceeding 1 nm/s, over 10× faster than previous vapor deposition demonstrations. We show that the semiconducting perovskite films produced with this method have excellent crystallinity and optoelectronic properties with 10 ns charge carrier lifetime, enabling us to fabricate the first photovoltaic devices made by perovskite vapor transport deposition. Our experiments are guided by computational fluid dynamics simulations that also predict that this technique could lead to deposition rates on the order of micrometers per second. This, in turn, could enable cost-effective scalable manufacturing of the perovskite-based solar technologies. Keywords: solar cells; perovskite; thin-film; vapor deposition; manufacturing; fluid dynamics, National Science Foundation (U.S.) (Award 1541959), National Science Foundation (U.S.) (Grant 1605406)

Electronic trap states limit the overall power conversion efficiency of quantum dot (QD) solar cells by inhibiting charge carrier transport and reducing the open-circuit voltage. Here, we explore the dynamic interaction of charge carriers between band edge states and sub-band trap states using broadband transient absorption spectroscopy. In monodisperse arrays of 4-5 nm diameter PbS QDs, we observe an optically active trap state ~100-200 meV below the band edge that occurs at a frequency of 1 in ~2500 QDs. Uncoupled QD solids with oleic acid ligands show trap-to-ground-state recombination that resembles Auger recombination. In electronically coupled QD solids, we observe entropically-driven uphill thermalization of trapped charge carriers from the trap state to the band edge via two distinct mechanisms: Auger-assisted charge transfer (~35 ps) and thermally activated hopping (~500 ps). Photophysical characterization combined with atomistic simulations and high-resolution transmission electron microscopy suggest that these states arise from epitaxially fused pairs of QDs – rather than electron or hole traps at the QD surface – offering new strategies for improving the efficiency of QD solar cells.

Fluorescence imaging is a powerful tool for studying biologically relevant macromolecules, but its applicability is often limited by the fluorescent probe, which must demonstrate both high site‐specificity and emission efficiency. In this regard, M13 virus, a versatile biological scaffold, has previously been used to both assemble fluorophores on its viral capsid with molecular precision and to also target a variety of cells. Although M13‐fluorophore systems are highly selective, these complexes typically suffer from poor molecular detection limits due to low absorption cross‐sections and moderate quantum yields. To overcome these challenges, a coassembly of the M13 virus, cyanine 3 dye, and silver nanoparticles is developed to create a fluorescent tag capable of binding with molecular precision with high emissivity. Enhanced emission of cyanine 3 of up to 24‐fold is achieved by varying nanoparticle size and particle‐fluorophore separation. In addition, it is found that the fluorescence enhancement increases with increasing dye surface density on the viral capsid. Finally, this highly fluorescent probe is applied for in vitro staining of E. coli . These results demonstrate an inexpensive framework for achieving tuned fluorescence enhancements. The methodology developed in this work is potentially amendable to fluorescent detection of a wide range of M13/cell combinations., Defense Advanced Research Projects Agency (Award HR0011-15-C-0084)

Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. However, the origin of the variations remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. Through a multi-scale investigation - combining correlative synchrotron scanning X-ray diffraction and time-resolved photoluminescence measurements on the same scan area - we reveal that lattice strain is directly associated with enhanced defect concentrations and non-radiative recombination. The strain patterns have a complex heterogeneity across multiple length scales. We propose that strain arises during the film growth and crystallization and provides a driving force for defect formation. Our work sheds new light on the presence and influence of structural defects in halide perovskites, revealing new pathways to manage defects and eliminate losses.

Lead halide-based perovskite thin films have attracted great attention due to the explosive increase in perovskite solar cell efficiencies. The same optoelectronic properties that make perovskites ideal absorber materials in solar cells are also beneficial in other light-harvesting applications and make them prime candidates as triplet sensitizers in upconversion via triplet-triplet annihilation in rubrene. In this contribution, we take advantage of long carrier lifetimes and carrier diffusion lengths in perovskite thin films, their high absorption cross sections throughout the visible spectrum, as well as the strong spin-orbit coupling owing to the abundance of heavy atoms to sensitize the upconverter rubrene. Employing bulk perovskite thin films as the absorber layer and spin-mixer in inorganic/organic heterojunction upconversion devices allows us to forego the additional tunneling barrier owing from the passivating ligands required for colloidal sensitizers. Our bilayer device exhibits an upconversion efficiency in excess of 3% under 785 nm illumination.

The demonstration of photovoltaic devices with high power conversion efficiencies using low cost perovskite materials hints at the possibility of dramatically lowering the cost of solar energy. Key to further exploiting the potential of these materials is developing rapid processing techniques that can be used to deliver lower cost high throughput manufacture. This work details the development of low viscosity rapid drying perovskite formulations designed to give high quality solar films when slot-die coated on flexible roll-to-roll compatible substrates. A single step slot-die compatible perovskite ink based on an acetonitrile/methylamine solvent system utilizing a chloride additive is developed, resulting in large area perovskite films from slot-die coating under ambient conditions. The drying conditions for the perovskite film are optimized and fast (

We present an all solution, two-step method for the production of methylammonium lead iondide (MAPbI3) perovskite thin films. Initially, PbS thin films were deposited on GaAs substrates. Subsequently, PbS films were transformed into PbI2 following treatment with polyiodide solutions. In a second conversion step, MAPbI3 films were obtained by reacting the films with methylammonium iodide solutions. The effect of the solvent on lead iodide morphology and consequently on MAPbI3 morphology was demonstrated. Conversion rate was slower with increasing solvent polarity. Optimization of conversion parameters is crucial for reproducibly obtaining continuous and adhesive perovskite films. Photoluminescence measurements showed that chemical treatments can substantially enhance light emission from the films. This route for all-solution-processed perovskites enables control over film morphology while maintaining a simple and low-cost process.

Metal halide perovskites such as methylammonium lead iodide (CH3 NH3 PbI3) are generating great excitement due to their outstanding optoelectronic properties, which lend them to application in high-efficiency solar cells and light-emission devices. However, there is currently debate over what drives the second-order electron-hole recombination in these materials. Here, we propose that the bandgap in CH3 NH3 PbI3 has a direct-indirect character. Time-resolved photo-conductance measurements show that generation of free mobile charges is maximized for excitation energies just above the indirect bandgap. Furthermore, we find that second-order electron-hole recombination of photo-excited charges is retarded at lower temperature. These observations are consistent with a slow phonon-assisted recombination pathway via the indirect bandgap. Interestingly, in the low-temperature orthorhombic phase, fast quenching of mobile charges occurs independent of the temperature and photon excitation energy. Our work provides a new framework to understand the optoelectronic properties of metal halide perovskites and analyse spectroscopic data.

We demonstrate all thermal vapor-deposited CsSnBr 3 perovskite solar cells. The cell architecture consists of a planar CsSnBr 3 heterojunction where the perovskite layer is grown by thin sequential deposition of SnBr 2 and CsBr allowing for immediate reaction. While other halides of CsSnX 3 (e.g. X=Cl, I) are extremely air sensitive and change color within seconds, illumination tests performed on unencapsulated CsSnBr 3 devices in ambient air show no change over the span of hours. Further, we evaluate the impact of low-temperature annealing and incorporation of various fluoride passivating dopant profiles via vapor deposition. Our results demonstrate an exciting alternative pathway to develop all-inorganic lead-free perovskite photovoltaics.

We report the use of isobenzofulvene–C60 adducts in bulk heterojunction organic solar cells, synthesized via the [4 + 2] cycloaddition of C60 with an in situ generated isobenzofulvene intermediate. The LUMO energy levels of these adducts are 20–180 meV higher than that of PCBM ([6,6]-phenyl-C61-butyric acid methyl ester). This large increase of the LUMO level is attributed to cofacial π-orbital interactions between the fullerene surface and the isobenzofulvene π–system (aromatic ring and double bond). Raised LUMO levels of fullerenes, together with their desirably slow recombination dynamics, led to higher open-circuit voltages (VOC) in bulk heterojunction polymer solar cells (up to 0.75 V for bisadducts) relative to cells tested in parallel using the well-known PCBM as the fullerene acceptor. In addition to enhanced VOC, the short-circuit current densities (JSC) were improved in the devices containing the epoxide analogs of the isobenzofulvene–C60. Notably the epoxide derivative of the monoadduct (IBF–Ep) exhibited ∼20% enhancement of power conversion efficiency (PCE) compared to reference P3HT:PCBM solar cells. A combination of optical and electronic methods was used to investigate the origin of the PCE enhancement observed with these new fullerene acceptors with particular attention to the increased VOCs.