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Developing a Robust Recombination Contact to Realize Monolithic Perovskite Tandems With Industrially Common p-Type Silicon Solar Cells
- Source :
- IEEE Journal of Photovoltaics. 8:1023-1028
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2018.
-
Abstract
- Although two-terminal perovskite-silicon tandem solar cells have rapidly increased in efficiency, they have only been demonstrated with n-type silicon, which currently constitutes less than 5% of the global photovoltaics market. In this paper, we realize the first two-terminal perovskite tandem with p-type silicon by developing a recombination contact that enables voltage addition without damaging either subcell. We find that silicon interband recombination contacts are limited by a SiO x charge-extraction barrier, which forms during oxidative top-cell fabrication. A sputtered 30-nm indium tin oxide layer is found to protect the silicon cell surface from oxidation, while forming a recombination contact with the p-type nickel oxide hole transport layer for the perovskite top cell. Using this recombination contact we achieve voltage addition between the perovskite top cell and aluminum back-surface field p-type silicon bottom cell. We also find that minimizing moisture on the nickel oxide surface is important for achieving a stable open-circuit voltage under illumination. The recombination contact developed herein could play an important role in near-future developments.
- Subjects :
- inorganic chemicals
Fabrication
Materials science
Silicon
Tandem
business.industry
Annealing (metallurgy)
Nickel oxide
Photovoltaic system
chemistry.chemical_element
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
0104 chemical sciences
Electronic, Optical and Magnetic Materials
Indium tin oxide
chemistry
Photovoltaics
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Subjects
Details
- ISSN :
- 21563403 and 21563381
- Volume :
- 8
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Photovoltaics
- Accession number :
- edsair.doi...........979d295772e53212a88048cdd0ab5467