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News media framing has been explicated as a way to construct social realities by persuading readers with the schematics of differently construed proceedings and events. Hence, this study engages in a critical discourse analysis examining the social representation of America and Iran in the coverage from two American online newspapers, namely The New York Times (NYT) and The New York Post (NYP). Since the United States has incited decades of simmering conflict with Iran that involves a global concern, this study also illustrates the polarisation of ideologisation in the coverage in relation to the two newspapers’ political leanings. The findings disclose a disparity of representation of social agents and ideological bias between the two news outlets, with the NYT presenting a balance of positive and negative ‘Us’, while the NYP exhibiting a prejudiced and one-sided ideology towards Iran. Consequently, this study sheds light on the critical role of news framing and highlights academically a systematic analysis of online news coverage considering their political dependency.

Unique c-MoS2 nanosheets with corrugated edges mitigate the suppression of LiPSs and assist to reutilize them to boost the electrochemical kinetics in the Li–S battery.

PurposeThis paper aims to examine the relationships between undergraduate management students’ emotional interest (EI) and cognitive interest (CI) in research methods (RMs), the perceived applicability of RMs to future careers and motivation to study RMs within the Asian higher education context. This draws implications for better pedagogical approaches to motivating them to study RMs.Design/methodology/approachA pre–post-semester cohort study design was conducted with 172 undergraduate management students enrolled on an RMs subject by means of a self-administrated online survey using Qualtrics. A total of 170 students responded to the pre-semester survey and 116 students to the post-semester one. The main instrument was adapted from Mazer’s (2012) study interest scale. Regression analysis was applied to investigating the relationship between students’ EI and CI in RMs with perceived applicability of RMs to future careers and their motivation to study RMs.FindingsThe findings have shown that there was a significant relationship between undergraduate management students’ CI and EI and perceived applicability of RMs to future careers and their study motivation towards RMs. The regression model built on the two independent variables of students’ EI in RMs and their perceived applicability of RMs to future careers served to have higher accuracy in predicting their study motivation.Originality/valueThis paper contributes to enriching the conceptual understanding of the conflating influences of undergraduate management students’ intrinsic and extrinsic motivation levels on studying RMs within the Asian higher education context. Practically, this study explores different pedagogical approaches to better motivating students to study RMs.

The scaling of silicon metal-oxide-semiconductor field-effect transistors has followed Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents

Atomically thin two-dimensional (2D) materials have long been considered as ideal platforms for developing separation membranes. However, it is difficult to generate uniform subnanometer pores over large areas on 2D materials. Herein, we report that the well-defined defect structure of monolayer MoS2, namely, eight-membered ring (8-MR) pores typically formed at the boundaries of two antiparallel grains, can serve as molecular sieves for efficient water/ion separation. The 8-MR pores (4.2 × 2.4 Å) in monolayer MoS2 allow rapid single-file water transport while rejecting various hydrated ions. Further, the density of grain boundaries and, consequently, the density of pores can be tuned by regulating the nucleation density and size of MoS2 grains during the chemical vapor deposition process. The optimized MoS2 membrane exhibited an ultrahigh water/NaCl selectivity of ~6.5 × 104 at a water permeance of 232 mol m−2 h−1 bar−1, outperforming the state-of-the-art desalination membranes. When used for direct hydrogen production from seawater by combining the forward osmosis and electrochemical water splitting processes, the membrane achieved ~40 times the energy conversion efficiency of commercial polymeric membranes. It also exhibited a rapid and selective proton transport behavior desirable for fuel cells and electrolysis. The bottom-up approach of creating precise pore structures on atomically thin films via grain boundary engineering presents a promising route for producing large-area membranes suitable for various applications.

Two-dimensional (2D) layered materials hold tremendous promise for post-Si nanoelectronics due to their unique optical and electrical properties. Significant advances have been achieved in device fabrication and synthesis routes for 2D nanoelectronics over the past decade; however, one major bottleneck preventing their immediate applications has been the lack of a reproducible approach for growing wafer-scale single-crystal films despite tremendous progress in recent experimental demonstrations. In this tutorial review, we provide a systematic summary of the critical factors-including crystal/substrate symmetry and energy consideration-necessary for synthesizing single-orientation 2D layers. In particular, we focus on the discussions of the atomic edge-guided epitaxial growth, which assists in unidirectional nucleation for the wafer-scale growth of single-crystal 2D layers.

Two-dimensional (2D) materials could potentially be used to develop advanced monolithic integrated circuits. However, despite impressive demonstrations of single devices and simple circuits—in some cases with performance superior to those of silicon-based circuits—reports on the fabrication of integrated circuits using 2D materials are limited and the creation of large-scale circuits remains in its infancy. Here we examine the development of integrated circuits based on 2D layered materials. We assess the most advanced circuits fabricated so far and explore the key challenges that need to be addressed to deliver highly scaled circuits. We also propose a roadmap for the future development of integrated circuits based on 2D layered materials. This Perspective examines the development of integrated circuits based on layered two-dimensional materials, exploring where they are likely to first find commercial use and considers the challenges than need to be addressed to create highly scaled circuits.

The authors would like to thank Jia-Wern Chen, Dr. Cheng-Hung Chu, Tomoki Watanabe, and Prof. Masanobu Haraguchi for useful discussions. We also acknowledge use of an optical measurement setup supported by Prof. Min-Hsiung Shih. We acknowledge financial support from the Ministry of Science and Technology, Taiwan (Grant No. MOST-109-2112-M-001-043-MY3 (Y.J.L.); MOST-110-2124-M-001-008-MY3 (Y.J.L.); MOST-110-2636-E-007-020 (H.H.C.); MOST-110-2622-8-007-015 (H.H.C.)) and Academia Sinica (Grant No. AS-CDA-108-M08 (Y.J.L.)). H.W.L. acknowledges the financial support from the AFOSR-AOARD (Award Number: FA2386-18-1-4099). V.T. is indebted to the support from the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2018-CARF/CCF-3079.

Thin-film electronics pliably laminated onto the epidermis for noninvasive, specific, and multifunctional sensing are ideal wearable systems for health monitoring and information technologies. However, it remains a critical challenge to fabricate ultrathin and compliant skin-like sensors with high imperceptibility and sensitivities. Here we report a design of conductive hydrogen-substituted graphdiyne (HsGDY) nanofilms with conjugated porous structure and inherent softness for on-skin sensors that allow minimization of stress and discomfort with wear. Dominated by the subtle deformation-induced changes in the interdomain tunneling conductance, the engineered HsGDY sensors show continuous and accurate results. Real-time noninvasive spatial mapping of dynamic/static strains in both tensile/compressive directions monitors various body motions with high sensitivity (GF ∼22.6, under 2% strain), fast response (∼60 ms), and long-term durability (∼5000 cycles). Moreover, such devices can dynamically distinguish between the temperature difference and frequency of air inhaled and exhaled through the nostril, revealing a quantitative assessment of the movement/health of the human body. The proof-of-concept strategy provides an alternative route for the design of next-generation wearable organic bioelectronics with multiple electronic functionalities.

Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered1,2. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic devices1,3. However, owing to metal-induced gap states (MIGS)4–7, energy barriers at the metal–semiconductor interface—which fundamentally lead to high contact resistance and poor current-delivery capability—have constrained the improvement of two-dimensional semiconductor transistors so far2,8,9. Here we report ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where the MIGS are sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a contact resistance of 123 ohm micrometres and an on-state current density of 1,135 microamps per micrometre on monolayer MoS2; these two values are, to the best of our knowledge, the lowest and highest yet recorded, respectively. We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS2, WS2 and WSe2. Our reported contact resistances are a substantial improvement for two-dimensional semiconductors, and approach the quantum limit. This technology unveils the potential of high-performance monolayer transistors that are on par with state-of-the-art three-dimensional semiconductors, enabling further device downscaling and extending Moore’s law. Electric contacts of semimetallic bismuth on monolayer semiconductors are shown to suppress metal-induced gap states and thus have very low contact resistance and a zero Schottky barrier height.

2D transition metal dichalcogenides (TMDCs) with intense and tunable photoluminescence (PL) have opened up new opportunities for optoelectronic and photonic applications such as light-emitting diodes, photodetectors, and single-photon emitters. Among the standard characterization tools for 2D materials, Raman spectroscopy stands out as a fast and non-destructive technique capable of probing material's crystallinity and perturbations such as doping and strain. However, a comprehensive understanding of the correlation between photoluminescence and Raman spectra in monolayer MoS

During the past decade, flexible/stretchable energy storage devices have garnered increasing attention, with the successful development of wearable electronics. However, due to the repeated deformation accompanied with the electrochemical depletion process, these devices suffer from unavoidable damage, including cracks, crazing, puncture and delamination, which can lead to serious performance degradation or even safety issues. Simultaneously, inspired by biological organs, self-healing capability is found to be a promising approach to address these issues by restoring the mechanical and electrochemical performance. This review first summarizes the structural design and features of various flexible/stretchable energy storage devices, from 1D to 3D configurations. Then, basic concepts and three self-healing mechanisms, including capsule-based systems, vascular-based systems, and intrinsic healing systems are analyzed along with a brief look at existing applications. Then we review all the important parts of state-of-art flexible/stretchable self-healing supercapacitors and batteries including electrodes, electrolytes, substrates and encapsulation. Moreover, a detailed evaluation of methodologies for flexibility, stretchability and self-healing capabilities are described in detail. Finally, the critical challenges and prospects of future promising solutions for self-healing flexible/stretchable energy storage devices or even electronics are provided.

Transition-metal dichalcogenide (TMDC) homo- and heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals (vdW) electronics and optoelectronics. How...

Design and development of an efficient, nonprecious catalyst with structural features and functionality necessary for driving the hydrogen evolution reaction (HER) in an alkaline medium remain a formidable challenge. At the root of the functional limitation is the inability to tune the active catalytic sites while overcoming the poor reaction kinetics observed under basic conditions. Herein, we report a facile approach to enable the selective design of an electrochemically efficient cobalt phosphide oxide composite catalyst on carbon cloth (CoP-Co

A facile solvothermal synthesis approach for chemical composition control in ternary Bi-S-I systems is reported by simply controlling the sulfide concentration. We demonstrate the application of these bismuth-based ternary mixed-anion compounds as high capacity anode materials in rechargeable batteries. Cells utilising Bi

Two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayers have been widely used for optoelectronic devices because of their ultrasensitivity to light detection acquired from their direct gap properties. However, the small cross-section of photon absorption in the atomically thin layer thickness significantly limits the generation of photocarriers, restricting their performance. Here, we integrate monolayer WS

Artificial heterojunctions formed by vertical stacking of dissimilar two-dimensional (2D) transition metal dichalcogenides (TMDs) monolayer materials in a chosen sequence hold tantalizing prospects...

Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS2 nanoribbons on β-gallium (iii) oxide (β-Ga2O3) (100) substrates. LDE MoS2 nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 108 and an averaged room temperature electron mobility of 65 cm2 V−1 s−1. The MoS2 nanoribbons can be readily transferred to arbitrary substrates while the underlying β-Ga2O3 can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe2 nanoribbons and lateral heterostructures made of p-WSe2 and n-MoS2 nanoribbons for futuristic electronics applications. Aligned arrays of single-crystalline monolayer TMD nanoribbons with high aspect ratios, as well as their lateral heterostructures, are realized, with the growth directed by the ledges on the β-Ga2O3 substrate. This approach provides an epitaxy platform for advanced electronics applications of TMD nanoribbons.

The authors acknowledge the facilities, as well as the scientific and technical assistance, from the NSW Node of the Australian National Fabrication Facility (ANFF) and the Research & Prototype Foundry Core Research Facility at the University of Sydney, part of the ANFF. The authors also thank the Electron Microscope Unit within the Mark Wainwright Analytical Centre at UNSW Sydney for the use of facilities. N.S. is grateful to the advanced graduate course on molecular systems for devices, a program for leading graduate schools, Kyushu University, Japan.

This work was supported by Huawei Grant RGC/3/3513 and KAUST Baseline BAS/1/1375. The authors acknowledge the support from Cao Zhen for the DFT calculation.

The Li–S battery is considered as the next-generation energy storage solution largely because of its high energy density. However, the lithium metal anode has suffered from the “shuttle effect” of ...

Simple, scalable and cost-effective synthesis of quality two-dimensional (2D) transition metal dichalcogenides (TMDs) is critical for fundamental investigations but also for the widespread adoption of these low-dimensional materials in an expanding range of device applications. Here, we report on the liquid-phase exfoliation (LPE) of molybdenum disulfide (MoS2) and tungsten disulfide (WS2) in aqueous ammonia (NH3(aq.)) as a greener alternative to commonly used but less environmentally friendly solvents. The synthesized nanosheets can be prepared in high concentrations (0.5–1 mg mL−1) and exhibit excellent stoichiometric and structural quality with a semiconducting character. These characteristics make them ideal for application in organic optoelectronics, where optical transparency and suitable energetics are two important prerequisites. When MoS2 and WS2 are used as the hole transport layer materials in organic photovoltaics, cells with a power conversion efficiency of 14.9 and 15.6%, respectively, are obtained, highlighting the potential of the aqueous ammonia-based LPE method for the preparation of high quality TMDs. The method could potentially be extended to other TMDs.

The development of membranes that block solutes while allowing rapid water transport is of great importance. The microstructure of the membrane needs to be rationally designed at the molecular level to achieve precise molecular sieving and high water flux simultaneously. We report the design and fabrication of ultrathin, ordered conjugated-polymer-framework (CPF) films with thicknesses down to 1 nm via chemical vapour deposition and their performance as separation membranes. Our CPF membranes inherently have regular rhombic sub-nanometre (10.3 × 3.7 Å) channels, unlike membranes made of carbon nanotubes or graphene, whose separation performance depends on the alignment or stacking of materials. The optimized membrane exhibited a high water/NaCl selectivity of ∼6,900 and water permeance of ∼112 mol m

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm

Architected materials that actively respond to external stimuli hold tantalizing prospects for applications in energy storage, harvesting, wearable electronics and bioengineering. Transition metal dichalcogenides (TMDs) which represent the three-atom-thick, two-dimensional (2D) building blocks, are excellent candidates but have found limited success compared to metallic, inorganic, and organic counterparts due to the lack of up-scalable manufacturing. Here we report the high-throughput printing of 2D TMDs into wafer-scale 3D architectures with structural hierarchy across seven orders of magnitude between critical feature sizes. Anode made of 3D MoS2 architectures comprises the concentric vortex-like intricacy that unites technological merits from architecture, mechanical engineering, and electrochemistry not found in its bulk or exfoliated/epitaxy counterparts. The result is, contrary to expectation, the high-rate, high-capacity, and high-loading lithium (Li)-storage, surpassing those state-of-the-art anode designs while the technique offers an evaporation-like simplicity for industrial scalability.

A comprehensive understanding of the energy level alignment mechanisms between two dimensional 2D semiconductors and electrodes is currently lacking, but it is a prerequisite for tailoring the interface electronic properties to the requirements of device applications. Here, we use angle resolved direct and inverse photoelectron spectroscopy to unravel the key factors that determine the level alignment at interfaces between a monolayer of the prototypical 2D semiconductor MoS2 and conductor, semiconductor, and insulator substrates. For substrate work function amp; 934;sub values below 4.5 eV we find that Fermi level pinning occurs, involving electron transfer to native MoS2 gap states below the conduction band. For amp; 934;sub above 4.5 eV, vacuum level alignment prevails but the charge injection barriers do not strictly follow the changes of amp; 934;sub as expected from the Schottky Mott rule. Notably, even the trends of the injection barriers for holes and electrons are different. This is caused by the band gap renormalization of monolayer MoS2 by dielectric screening, which depends on the dielectric constant amp; 949;r of the substrate. Based on these observations, we introduce an expanded Schottky Mott rule that accounts for band gap renormalization by amp; 949;r dependent screening and show that it can accurately predict charge injection barriers for monolayer MoS2. It is proposed that the formalism of the expanded Schottky Mott rule should be universally applicable for 2D semiconductors, provided that material specific experimental benchmark data are available

We report experimental and theoretical evidence of strong electron-plasmon interaction in $n$-doped single-layer ${\mathrm{MoS}}_{2}$. Angle-resolved photoemission spectroscopy measurements reveal the emergence of distinctive signatures of polaronic coupling in the electron spectral function. Calculations based on many-body perturbation theory illustrate that electronic coupling to two-dimensional carrier plasmons provides an exhaustive explanation of the experimental spectral features and their energies. These results constitute compelling evidence of the formation of plasmon-induced polaronic quasiparticles, suggesting that highly doped transition-metal dichalcogenides may provide a new platform to explore strong-coupling phenomena between electrons and plasmons in two dimensions.

Tremendous research efforts have been made to electrochemically convert CO2 into useful chemicals, with the main products being limited to hydrocarbons and oxygenates. One-step processes that integ...