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Low-defect-density WS2 by hydroxide vapor phase deposition
- Source :
- Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
- Publication Year :
- 2022
- Publisher :
- Nature Portfolio, 2022.
-
Abstract
- Chemical vapor deposition enables the scalable production of 2D semiconductors, but the grown materials are usually affected by high defect densities. Here, the authors report a hydroxide vapour phase deposition method to synthesize wafer-scale monolayer WS2 with reduced defect density and electrical properties comparable to those of exfoliated flakes.
- Subjects :
- Science
Subjects
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 13
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.b75bdb1edf6c415fa39d0d189ad85c76
- Document Type :
- article
- Full Text :
- https://doi.org/10.1038/s41467-022-31886-0