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Low-defect-density WS2 by hydroxide vapor phase deposition

Authors :
Yi Wan
En Li
Zhihao Yu
Jing-Kai Huang
Ming-Yang Li
Ang-Sheng Chou
Yi-Te Lee
Chien-Ju Lee
Hung-Chang Hsu
Qin Zhan
Areej Aljarb
Jui-Han Fu
Shao-Pin Chiu
Xinran Wang
Juhn-Jong Lin
Ya-Ping Chiu
Wen-Hao Chang
Han Wang
Yumeng Shi
Nian Lin
Yingchun Cheng
Vincent Tung
Lain-Jong Li
Source :
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Publication Year :
2022
Publisher :
Nature Portfolio, 2022.

Abstract

Chemical vapor deposition enables the scalable production of 2D semiconductors, but the grown materials are usually affected by high defect densities. Here, the authors report a hydroxide vapour phase deposition method to synthesize wafer-scale monolayer WS2 with reduced defect density and electrical properties comparable to those of exfoliated flakes.

Subjects

Subjects :
Science

Details

Language :
English
ISSN :
20411723
Volume :
13
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
edsdoj.b75bdb1edf6c415fa39d0d189ad85c76
Document Type :
article
Full Text :
https://doi.org/10.1038/s41467-022-31886-0