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15 results on '"Tringe, J.W."'

2. Radiation effects on InGaN quantum wells and GaN simultaneously probed by ion beam-induced luminescence

Author

Tringe, J.W., Conway, A.M., Felter, T.E., Chan, W.J. Moberly, Castelaz, J., Lordi, V., Xia, Y., Stevens, C.G., and Wetzel, C.

Subjects
Light-emitting diodes -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

InGaN quantum well structures on GaN epilayers were exposed to 500 keV alpha particles to fluences above [10.sup.14] [cm.sup.2] to probe the relative radiation tolerance of the epilayer and wells. Performance was estimated by the intensity of ion-beam induced luminescence. Two separate types of quantum well structures emitted at 470 and 510 nm prior to irradiation, and only small wavelength shifts were observed even with the highest alpha fluences. Complementary cathodoluminescence experiments showed that luminescence in the quantum wells is strongly influenced by charges injected deep into the GaN epilayer. The 500 keV alpha penetration depth was ~1 [micro]m, so that defects were created at a faster rate in GaN compared to InGaN as alpha particles slowed and stopped within a minority carrier diffusion length of the quantum wells. However, the rate of luminescent decay was similar for both materials. Taken together with the cathodoluminescence data, this ion-beam induced luminescence comparison indicates that the quantum well luminescence decay rate is dominated by radiation-induced defects in the GaN epilayer. InGaN quantum wells are then demonstrated to be not more than a factor of ten more radiation sensitive than GaN, and may be substantially less sensitive than this upper bound. Index Terms--Alpha particle, InGaN, light-emitting diode, quantum well, radiation.

Published
2008

3. Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films

Author

Devine, R.A.B., Tringe, J.W., and Chavez, J.R.

Subjects
Radiation -- Measurement, Dielectric films -- Testing, Thin films, Business, Electronics, Electronics and electrical industries
Abstract

Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a [dose.sup.0.47] variation. The possible origin of the negative charge trapping is discussed. Index Terms--Low-k dielectric, radiation effects, silsesquioxane, thin film, X-ray.

Published
2002

4. Radiation damage mechanisms for luminescence in Eu-doped GaN

Author

Tringe, J.W., Felter, T.E., Talley, C.E., Morse, J.D., Stevens, C.G., Castelaz, J.M., and Wetzel, C.

Subjects
Europium -- Optical properties, Gallium compounds -- Optical properties, Luminescence -- Analysis, Thin films, Multilayered -- Optical properties, Physics
Abstract

In situ optical measurements are used to examine the mechanisms for light emission and damage in Eu-doped GaN thin films. The efficiency of the ion-beam-induced luminescence process is estimated by using a well-characterized scintillator, Ba[F.sub.2].

Published
2007

5. Crystallographic anisotropy of wear on a polycrystalline diamond surface

Author

El-Dasher, B.S., Gray, J.J., Tringe, J.W., Biener, J., Hamza, A.V., Wild, C., Wörner, E., Koidl, P., and Publica

Subjects
polishing, wear, Röntgenstrahltopographie, Schleifen, abrasion, Verschleiß, electron backscatter diffraction, x-ray topography, CVD-diamond, Elektronenbeugung, CVD-Diamant, grinding, Politur
Abstract

We correlate topography and diffraction measurements to demonstrate that grain orientation profoundly influences polishing rates in polycrystalline diamond synthesized by chemical vapor deposition. Grains oriented with {111} or {100} planes perpendicular to the surface normal polish at significantly lower rates compared with grains of all other orientations when the surface is polished in continuously varying in-plane directions. These observations agree with predictions of the periodic bond chain vector model, developed previously for single crystals, and indicate that the polishing rate depends strongly on the number of periodic bond chain vectors that are within 10° of the exposed surface plane.

Published
2006

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