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Radiation damage mechanisms for luminescence in Eu-doped GaN

Authors :
Tringe, J.W.
Felter, T.E.
Talley, C.E.
Morse, J.D.
Stevens, C.G.
Castelaz, J.M.
Wetzel, C.
Source :
Journal of Applied Physics. March 1, 2007, Vol. 101 Issue 5, 054902-1-054902-3
Publication Year :
2007

Abstract

In situ optical measurements are used to examine the mechanisms for light emission and damage in Eu-doped GaN thin films. The efficiency of the ion-beam-induced luminescence process is estimated by using a well-characterized scintillator, Ba[F.sub.2].

Subjects

Subjects :
Europium -- Optical properties
Gallium compounds -- Optical properties
Luminescence -- Analysis
Thin films, Multilayered -- Optical properties
Physics

Details

Language :
English
ISSN :
00218979
Volume :
101
Issue :
5
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.165135811

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