Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films

Radiation-induced charge trapping has been studied in cured hydrogen silsesquioxane low dielectric constant films subjected to electric fields during the radiation process. Evidence is found for electric field-dependent negative charge trapping with a [dose.sup.0.47] variation. The possible origin of the negative charge trapping is discussed. Index Terms--Low-k dielectric, radiation effects, silsesquioxane, thin film, X-ray.