Search

For the first time, a 3D stacking of MoS 2 and Si CMOS integrated with embedded RRAM is proposed and fabricated, and CMOS inverter comprised of MoS 2 nFET and Si pFET is demonstrated. Vertically stacked multiple MoS 2 channels are required for the performance matching. Resistive switching (RS) of a Ti/MoS 2 /p+-Si structure showing high ON/OFF ratio of 106 is demonstrated firstly by highly Si-compatible process. Surface modification is the key to formation of uniform and smooth stacked MoS 2 multiple channels and to enhanced resistive switching endurance. This scheme can be applied to CMOS-based bipolar RRAM 1T1R or 2T1R without increasing the cell size. Our work offers a new pathway with high feasibility of integrated 2D materials and Si FETs into CMOS to enabling 3D embedded logics and memories for future computing systems.

Improved electrical characteristics of CMOS inverters composed of Ge n- and p-finFETs were demonstrated by utilizing newly introduced Ge surface treatments. In-situ digital O3 treatment in ALD chamber was adopted on the surface of Ge fin sidewall in order to reduce the roughness and etching damages through the GeO desorption mechanism. The treatment effects were checked by AFM and C-V measurements. By combining this treatment with optimized microwave annealing, sub-threshold slope and the $\text{I}_{\mathrm{ ON}}/\text{I}_{\mathrm{ OFF}}$ ratio were remarkably improved in both n-finFET and p-finFET, and Ge CMOS inverters with high voltage gain of 50.3 V/V at low ${V}_{D}= 0.6$ V was realized. Finally, simulations on an ideal Ge CMOS inverter were presented.

$\Omega$ -gated negative capacitance (NC) FinFETs, CMOS inverters and SRAM are fabricated and analyzed. Forming gas annealing (FGA) is performed and found to not only enhance ferroelectricity (FE) but also the NCFET electrostatics, in terms of higher $\mathrm{I}_{\mathrm{ON}}$ , smaller hysteresis and subthreshold slop (SS). The SS is less than 60 mV/dec for both N-FinFET and P-FinFET in this work. Moreover, the CMOS inverter shows more symmetric and larger voltage gain after FGA.

Ge nanowire (NW) FETs exhibiting subthreshold swing (SS) of 54 mV/dec at room temperature are demonstrated with ferroelectric HfZrOx (FE-HZO) gate stack for the first time. Ion/Ioff ratios higher than 107 and 106 for p- and n-NWFETs, respectively, have been achieved by adopting the gate-all-around (GAA) configuration. Electrical biasing effects on the HZO ferroelectric reliability have been systematically investigated in this work. It is found that the polarization behavior will degrade with electrical stress time and can be recovered. The Ge HZO FinFET CMOS inverter shows experimentally voltage gain of 24.8 V/V.

Ge n- and p-FinFETs with different interfacial layer ferroelectric HfZrO x (IL-FE-HZO) gate stacks have been demonstrated systematically by various annealing conditions for the first time. Microwave annealing (MWA) not only shows enhanced FE characteristics but also suppresses the gate leakage and Ge interdiffusion compared with conventional rapid thermal annealing (RTA). While HZO on Al 2 O 3 IL results in paraelectric behavior, HZO on GeO x IL exhibits significant FE. High I on /I off (> 107) and low subthreshold slope (S.S. ∼ 58 mV/dec.) are demonstrated by a Ge nFinFET with a gate length (L g ) of 60 nm and a FE-HZO/GeO x gate stack.

With infrared reflection absorption spectra and temperature-programmed desorption of CO as a probe molecule, we investigated the surface structure of Au–Pt bimetallic nanoclusters on thin-film Al 2 O 3 /NiAl(100) under ultrahigh vacuum conditions. Vapor Au and Pt (0.0–2.0 ML) were sequentially deposited onto Al 2 O 3 /NiAl(100) at 300 K to form bimetallic clusters; under the kinetic constraint, the order of the metal deposition made a variation in the surface structure of the grown clusters. For the deposition of Au onto Pt clusters (first Pt and then Au), the deposited Au decorated preferentially and then aggregated the edge sites of Pt clusters, instead of decorating the rest of Pt surface. For the metal deposition in the reverse order, the deposited Pt covered uniformly the surface of existing Au clusters and no preferential adsorption site was indicated. The infrared absorption for CO on Au sites was significantly enhanced when alloying occurred; this enhancement is primarily a local field effect depending on the coordination of CO-binding Au, and hence provides additional structural characterization of the grown clusters.

Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only suppress surface roughness but also guarantee low defect generation on the etched Ge surface. The fabricated Ge peaking FinFETs possess several unique features: (1) A peaking fin configuration with a 6-nm top-gate formed by an anisotropic NBO process at room temperature. (2) Nearly defect-free three dimensional channel surfaces by NB processes. (3) Ion and Gm improvement by NB processes as compared to that by conventional inductively coupled plasma etching (ICP). (4) Recorded high Ion/Ioff ratio and low subthreshold swing (S.S. ∼ 70 mV/dec.) of Ge n-FinFETs. (5) Excellent immunity for short channel effect of Ge FinFETs.

Acute Epstein-Barr virus (EBV) infection commonly induces hematological abnormalities, most notably atypical lymphocytosis ("infectious mononucleosis"). In addition, mild decreases in platelet counts are commonly encountered in uncomplicated cases; however, severe thrombocytopenia is exceedingly rare. Here, we describe a 58-year-old white man who presented with cervical lymphadenopathy, thrombocytopenia, and a bleeding diathesis with minimal platelet counts of 0.5 x 10(9)/l. The diagnosis of acute EBV was serologically confirmed. Because of the bleeding diathesis and the prior ingestion of aspirin, treatment was started with intravenous methylprednisolone and immunoglobulins. Platelet counts normalized within 7 days, and the patient fully recovered. Although more common in children, adolescents, and young adults, acute EBV infection may also occur in older adults, and this differential diagnosis should be considered in every patient presenting with acute thrombocytopenia. In this report we also briefly summarize the literature on EBV-associated severe thrombocytopenia.