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Fabrication of $\Omega$ -gated Negative Capacitance FinFETs and SRAM
- Source :
- 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
- Publication Year :
- 2019
- Publisher :
- IEEE, 2019.
-
Abstract
- $\Omega$ -gated negative capacitance (NC) FinFETs, CMOS inverters and SRAM are fabricated and analyzed. Forming gas annealing (FGA) is performed and found to not only enhance ferroelectricity (FE) but also the NCFET electrostatics, in terms of higher $\mathrm{I}_{\mathrm{ON}}$ , smaller hysteresis and subthreshold slop (SS). The SS is less than 60 mV/dec for both N-FinFET and P-FinFET in this work. Moreover, the CMOS inverter shows more symmetric and larger voltage gain after FGA.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Subthreshold conduction
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Ferroelectricity
CMOS
0103 physical sciences
Optoelectronics
Inverter
Static random-access memory
0210 nano-technology
business
Forming gas
Voltage
Negative impedance converter
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
- Accession number :
- edsair.doi...........665d0fd36665fa34786ee161c894de68