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Random numbers are a valuable commodity in gaming and gambling, simulation, conventional and quantum cryptography, and in non-conventional computing schemes such as stochastic computing. We propose to generate a random bit using a position measurement of a single mobile charge on a coupled pair of quantum dots. True randomness of the measurement outcome is provided by quantum mechanics via Born's rule. A random bit string may be generated using a sequence of repeated measurements on the same double quantum dot (DQD) system. Any bias toward a "0" measurement or a "1" measurement may be removed or tuned as desired simply by adjusting the detuning between localized states. Device tunability provides versatility, enabling this quantum random number generator (QRNG) to support applications in which no bias is desired, or where a tunable bias is desired. We discuss a metal-dot implementation as well as a molecular implementation of this QRNG. Basic quantum mechanical principles are used to study power dissipation and timing considerations for the generation of random bit strings. The DQD offers a small form factor and, in a metallic implementation, is usable in the case where cryogenic operations are desirable (as in the case of quantum computing). For room-temperature applications, a molecular DQD may be used., Comment: 6 pages, 5 figures, IEEE Transactions journal format

We report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultra-thin (~1 nm) tunnel-transparent SiO2 in Ni-SiO2-Ni tunnel junctions. We show that as a result of the O2 plasma steps in PEALD of SiO2, the top surface of the underlying Ni electrode is oxidized. Additionally, the bottom surface of the upper Ni layer is also oxidized where it is in contact with the deposited SiO2, most likely as a result of oxygen-containing species on the surface of the SiO2. Due to the presence of these surface parasitic layers of NiO, which exhibit features typical of thermally activated transport, the resistance of Ni-SiO2-Ni tunnel junctions is drastically increased. Moreover, the transport mechanism is changed from quantum tunneling through the dielectric barrier to one consistent with thermally activated resistors in series with tunnel junctions. The reduction of NiO to Ni is therefore required to restore the metal-insulator-metal (MIM) structure of the junctions. Rapid thermal annealing in a forming gas ambient at elevated temperatures is presented as a technique to reduce both parasitic oxide layers. This method is of great interest for devices that rely on MIM tunnel junctions with ultra-thin barriers. Using this technique, we successfully fabricated MIM SETs with minimal trace of parasitic NiO component. We demonstrate that the properties of the tunnel barrier in nanoscale tunnel junctions can be evaluated by electrical characterization of SETs., Comment: 19 pages, 5 figures, accepted for publication in JVST A

A mechanism for the reduction of dynamic energy dissipation in the computing circuit is described. The resonant circuit with controlled switches conserves the stored energy by recovering upto 90% of energy that would be otherwise lost during logic state transitions. This energy-conserving approach preserves thermodynamic entropy, ideally preventing heat generation in the system. This approach is used in a proposed resonant clocking and logic application without dynamic energy dissipation., Comment: This paper has been withdrawn by the author due to other reasons

A single-electron latch is a device that can be used as a building block for Quantum-dot Cellular Automata (QCA) circuits. It consists of three nanoscale metal "dots" connected in series by tunnel junctions; charging of the dots is controlled by three electrostatic gates. One very important feature of a single-electron latch is its ability to store ("latch") information represented by the location of a single electron within the three dots. To obtain latching, the undesired leakage of charge during the retention time must be suppressed. Previously, to achieve this goal, multiple tunnel junctions were used to connect the three dots. However, this method of charge leakage suppression requires an additional compensation of the background charges affecting each parasitic dot in the array of junctions. We report a single-electron latch where a granular metal film is used to fabricate the middle dot in the latch which concurrently acts as a charge leakage suppressor. This latch has no parasitic dots, therefore the background charge compensation procedure is greatly simplified. We discuss the origins of charge leakage suppression and possible applications of granular metal dots for various single-electron circuits., Comment: 21 pages, 4 figures

The electrostatic interaction between two capacitively-coupled metal double-dots is studied at low temperatures. Experiments show that when the Coulomb blockade is lifted by applying appropriate gate biases to both double-dots, the conductance through each double-dot becomes significantly lower than when only one double-dot is conducting. A master equation is derived for the system and the results obtained agree well with the experimental data. The model suggests that the conductance lowering in each double-dot is caused by a single-electron tunneling in the other double-dot. Here, each double-dot responds to the instantaneous, rather than average, potentials on the other double-dot. This leads to correlated electron motion within the system, where the position of a single electron in one double-dot controls the tunneling rate through the other double-dot., Comment: 19 pages [pre-print style], 8 figures, accepted for Phys. Rev. B