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3. Contribution of Secondary Alpha Particles to Soft Error Rates in Space Systems

Author

Cadena, Rick M., Warren, Kevin M., Dodds, Nathaniel A., Trippe, James M., Sierawski, Brian D., Ball, Dennis R., Reed, Robert A., and Schrimpf, Ronald D.

Abstract

The importance of including secondary particles in particle environments for single event effects (SEE) simulations is examined by comparing total error rates with and without secondary alpha particles as a result of target fragmentation. Previous experimental single-event tests have demonstrated importance of short-range, high-LET secondary particles, produced by target fragmentation near to device. However, current error rate prediction workflows, based on tools such as CREME96 and SPENVIS, do not account for these secondary particles from target fragmentation. Reevaluating those practices shows that the impact of secondary alpha particles on total error rates is negligible for the environments, devices, and aluminum shielding explored. To compare the broader issue of nuclear reactions in overlaying materials, energy deposition simulations were done in MRED, which indicate that the composition and sequence of overlying materials need to be considered with regard to secondary particle production.

Published
2024
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4. Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

Author

Gorchichko, Mariia, primary, Zhang, En Xia, additional, Reaz, Mahmud, additional, Li, Kan, additional, Wang, Peng Fei, additional, Cao, Jingchen, additional, Brewer, Rachel M., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Sierawski, Brian D., additional, Alles, Michael L., additional, Cox, Jonathan, additional, Moran, Steven L., additional, Iyer, Subramanian S., additional, and Fleetwood, Daniel M., additional

Published
2023
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5. Methodology for Correlating Historical Degradation Data to Radiation-Induced Degradation System Effects in Small Satellites

Author

Nederlander, Richard H., Witulski, Arthur F., Reed, Robert A., Zhang, Enxia, Schrimpf, Ronald D., Sierawski, Brian D., Karsai, Gabor, Mahadevan, Nag, Stassun, Keivan G., Ryder, Kaitlyn L., Austin, Rebekah A., Campola, Michael J., and Ladbury, Ray L.

Subjects
satellites, radiation degradation, bayesian analysis
Abstract

When constructing a system-level fault tree to demonstrate device-to-system level radiation degradation, reliability engineers need relevant, device-level failure probabilities to incorporate into reliability models. Deriving probabilities from testing can be expensive and time-consuming, especially if the system is complex. This methodology offers an alternative means of deriving device-level failure probabilities. It uses Bayesian analysis to establish links between historical radiation datasets and failure probabilities. A demonstration system for this methodology is provided, which is a TID response of a linear voltage regulator at 100 krad(SiO2). Data fed into the Bayesian model is derived from literature on the components found within a linear voltage regulator. An example is presented with data pertaining to the device’s bipolar junction transistor (BJT)’s gain degradation factor (GDF). Kernel density estimation is used to provide insight into the dataset’s general distribution shape. This guides the engineer into picking the appropriate distribution for device-level Bayesian analysis. Failure probabilities generated from the Bayesian analysis are incorporated into a LTspice model to derive a system failure probability (using Monte Carlo) of the regulator’s output. In our demonstration system, a 96.5% likelihood of system degradation was found in the assumed environment.

Published
2022

6. Incorporating Component-Level Testing Into Bayesian Degradation Distributions to Estimate a Voltage Regulator’s Radiation Failure Probabilities

Author

Nederlander, Richard H., Witulski, Arthur F., Reed, Robert A., Karsai, Gabor, Ladbury, Ray L., Zhang, En Xia, Schrimpf, Ronald D., Ryder, Kaitlyn L., Campola, Michael J., Mahadevan, Nag, Austin, Rebekah A., and Sierawski, Brian D.

Abstract

Device-level failure probabilities derived from historical, similar radiation datasets can be inputted into a system-level radiation reliability model to provide insight into that system’s failure probability. A linear voltage regulator reliability model that utilizes historical total ionizing dose (TID) [< 100 krad(SiO2)] and displacement damage dose (DDD) measurements ( $ &lt; 9\times 10^{11}$ equivalent 1-MeV neutrons/cm2) is used as a demonstration system. This methodology aims to reduce engineering uncertainty at early design stages before radiation test data are available or on quick turn-around projects without radiation test budgets.

Published
2023
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7. Connecting Mission Profiles and Radiation Vulnerability Assessment

Author

Nederlander, Richard H., Ryder, Kaitlyn L., Witulski, Arthur F., Karsai, Gabor, Mahadevan, Nag, Sierawski, Brian D., Schrimpf, Ronald D., Reed, Robert A., Campola, Michael J., and Austin, Rebekah A.

Subjects
radiation vulnerability, mission profiles, assessment, RGENTIC, SEAM
Abstract

Radiation vulnerability assessment early in spacecraft development is cheaper and faster than in late development phases. RGENTIC and SEAM are two software platforms that can be coupled to provide this type of early assessment. Specifically, RGENTIC is a tool that outputs descriptions of radiation risks based on a selected mission environment and the system’s electronic part portfolio, while SEAM models how radiation-induced faults in electronic parts propagate through a system. In this work, we propose a spacecraft evaluation flow where RGENTIC’s outputs, which are radiation vulnerabilities of electronic parts for a given mission, become inputs to SEAM, resulting in an automatic part-type template palette presented to users so that they can easily begin modeling the occurrence and propagation of radiation-induced faults in their spacecraft. In this context, fault propagation modeling shows how radiation effects impact the spacecraft’s electronics. The interface between these platforms can be streamlined through the creation of a SEAM global part-type library with templates based on radiation effects in part-type families such as sensors, processors, voltage regulators, and so forth. Several of the part-types defined in RGENTIC have been integrated into SEAM templates. Ultimately, all 66+ part-types from the RGENTIC look-up table will be included in the SEAM global part library. Once accomplished, the part templates can be used to populate each project-specific part library in SEAM, ensuring all RGENTIC’s part-types are represented, and the radiation effects are consistent between the two. The harmonization process between RGENTIC and SEAM begins as follows: designers input a detailed knowledge of their system and mission into RGENTIC, which then outputs a generic part-type list that associates each part-type with potential radiation concerns. The list is then downloaded in a SEAM-readable file, which SEAM uses to populate the initially blank project with the part templates that correspond to RGENTIC’s output. The final product is a system fault model using a project-specific radiation effect part library. The radiation effects considered in the part library are associated with three categories of radiation-environment issues: single event effects (SEE), total ionizing dose (TID), and displacement damage dose (DDD). An example part-type is the discrete LED, which has been functionally decomposed into input power and output light. It has a single possible radiation-induced fault that is associated with DDD, which causes degraded brightness and is observed on the output. Overall, designers will benefit from a coordination of these two tools because it simplifies the initial definition of the project in SEAM. This is especially the case for new users, since the necessary radiation models for their parts are available before modeling commences. Furthermore, starting from a duplicate of an existing project decreases the amount of time and effort required to develop project-specific models. Incorporating RGENTIC’s table of part-types resolves these issues and provides a streamlined process for creating system radiation fault models. Consequently, spacecraft designers can identify radiation problems early in the design cycle and fix them with lower cost and less effort than in later design stages.

Published
2021

8. Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices

Author

Johnson, Robert A., Witulski, Arthur F., Sierawski, Brian D., Ball, Dennis R., Galloway, Kenneth F., Sternberg, Andrew L., Reed, Robert A., Schrimpf, Ronald D., Alles, Michael L., Lauenstein, Jean-Marie, and Hutson, John M.

Abstract

Silicon carbide (SiC) power devices may exhibit step increases in leakage current when exposed to heavy ions while biased in the OFF state. Estimating the magnitude of this phenomenon over time in the variable solar energetic particle environment represents a challenge, as the probability of occurrence and step sizes are widely variable. The Prediction of Solar particle Yields for Characterizing Integrating Circuits (PSYCHIC) code is used to generate potential environmental flux spectra. Using an existing method, leakage current increases during broad-beam irradiation are characterized by frequency and magnitude. In this article, these characterizations are applied to various environmental flux spectra to generate a range of cumulative leakage current increases. This process is repeated to produce distributions of leakage current increases that account for environmental variability and step size variability. Comparing the results for various operating voltages, mission durations, and shielding, it is shown that shielding thickness and operating voltage have a significant influence on the potential cumulative leakage current increase.

Published
2023
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9. Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors

Author

Brewer, Rachel M., primary, Zhang, En Xia, additional, Gorchichko, Mariia, additional, Wang, Peng Fei, additional, Cox, Jonathan, additional, Moran, Steven L., additional, Ball, Dennis R., additional, Sierawski, Brian D., additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Iyer, Subramanian S., additional, and Alles, Michael L., additional

Published
2021
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10. Monte Carlo simulation of single event effects

Author

Weller, Robert A., Mendenhall, Marcus H., Reed, Robert A., Schrimpf, Ronald D., Warren, Kevin M., Sierawski, Brian D., and Massengill, Lloyd W.

Subjects
Extraterrestrial radiation -- Analysis, Event history analysis -- Usage, Monte Carlo method -- Usage, Monte Carlo method -- Research, Computer-generated environments -- Methods, Computer simulation -- Methods, Science -- Computer programs, Science -- Usage, Scientific software, Business, Electronics, Electronics and electrical industries
Published
2010

11. General framework for single event effects rate prediction in microelectronics

Author

Weller, Robert A., Reed, Robert A., Warren, Kevin M., Mendenhall, Marcus H., Sierawski, Brian D., Schrimpf, Ronald D., and Massengill, Lloyd W.

Subjects
Ionization -- Models, Mathematical models -- Methods, Microelectronics -- Electric properties, Miniature electronic equipment -- Electric properties, Monte Carlo method -- Usage, Business, Electronics, Electronics and electrical industries
Published
2009

12. Impact of low-energy proton induced upsets on test methods and rate predictions

Author

Sierawski, Brian D., Pellish, Jonathan A., Reed, Robert A., Schrimpf, Ronald D., Warren, Kevin M., Weller, Robert A., Mendenhall, Marcus H., Black, Jeffrey D., Tipton, Alan D., Xapsos, Michael A., Baumann, Robert C., Deng, Xiaowei, Campola, Michae J., Friendlich, Mark R., Kim, Hak S., Phan, Anthony M., and Seidleck, Christina M.

Subjects
Protons -- Electric properties, Ionization -- Testing, Static random access memory -- Electric properties, Monte Carlo method -- Usage, Extraterrestrial radiation -- Electric properties, SRAM, Business, Electronics, Electronics and electrical industries
Published
2009

14. Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch

Author

Warren, Kevin M., Sierawski, Brian D., Reed, Robert A., Weller, Robert A., Carmichael, Carl, Lesea, Austin, Mendenhall, Marcus H., Dodd, Paul E., Schrimpf, Ron D., Massengill, Lloyd W., Hoang, Tan, Wan, Hsing, De Jong, J.L., Padovani, Rick, and Fabula, Joe J.

Subjects
Monte Carlo method -- Usage, Heavy ions -- Influence, Radiation -- Influence, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate. Index Terms--Geant4, MRED, rate prediction, SEU.

Published
2007

15. Distribution of proton-induced transients in silicon focal plane arrays

Author

Howe, Christina L., Weller, Robert A., Reed, Robert A., Sierawski, Brian D., Marshall, Paul W., Marshall, Cheryl J., Mendenhall, Marcus H., Schrimpf, Ronald D., and Hubbs, John E.

Subjects
Monte Carlo method -- Usage, Protons -- Influence, Irradiation -- Influence, Semiconductor wafers -- Properties, Integrated circuit fabrication -- Methods, Integrated circuit fabrication, Business, Electronics, Electronics and electrical industries
Abstract

Proton-induced energy deposition in a silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, including events resulting from multiple particles incident on a single pixel, to describe the experimental data accurately. Post-processing of Monte Carlo simulations is done to account for the effects of pile up (multiple hits on a single pixel during one integration time) and non-radiation-induced noise in experiment. The results are compared with experimental data, and demonstrate how direct ionization dominates the cross section, yet fluctuations in dE/dx cause a broad range of energy depositions not addressed by an average LET calculation. An event rate is predicted for a full space proton flux and the dominance of direct ionization is shown and compared to computation using constant LET methods in CREME96. This comparison shows that at lower energies, CREME96 sufficiently predicts the event rate, but at higher energies a high fidelity simulation method is needed to capture the distribution. Index Terms--Energy deposited, event rate, focal plane array, Geant4, Monte Carlo, pile up.

Published
2007

16. A generalized SiGe HBT single-event effects model for on-orbit event rate calculations

Author

Pellish, Jonathan A., Reed, Robert A., Sutton, Akil K., Weller, Robert A., Carts, Martin A., Marshall, Paul W., Marshall, Cheryl J., Krithivasan, Ramkumar, Cressler, John D., Mendenhall, Marcus H., Schrimpf, Ronald D., Warren, Kevin M., Sierawski, Brian D., and Niu, Guofu F.

Subjects
International Business Machines Corp., Computer industry -- Analysis, Computer industry -- Models, Computer industry, Microcomputer industry, Business, Electronics, Electronics and electrical industries
Abstract

This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions. Index Terms--Deep trench isolation, Geant4, geosynchronous orbit, low-earth orbit, rate prediction, silicon-germanium HBT, single-event upset.

Published
2007

17. Application of RADSAFE to model the single event upset response of a 0.25 [micro]m CMOS SRAM

Author

Warren, Kevin M., Weller, Robert A., Sierawski, Brian D., Reed, Robert A., Mendenhall, Marcus H., Schrimpf, Ronald D., Massengill, Lloyd W., Porter, Mark E., Wilkinson, Jeffrey D., LaBel, Kenneth A., and Adams, James H.

Subjects
Complementary metal oxide semiconductors -- Analysis, Simulation methods -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The RADSAFE simulation framework is described and applied to model SEU in a 0.25 [micro]m CMOS 4 Mbit SRAM. For this circuit, the RADSAFE approach produces trends similar to those expected from classical rectangular parallelepiped models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit. Index Terms--GEANT4, heavy-ion, RADSAFE, SEU, TCAD.

Published
2007

18. Reducing soft error rate in logic circuits through approximate logic functions

Author

Sierawski, Brian D., Bhuva, Bharat L., and Massengill, Lloyd W.

Subjects
Logic design -- Research, Integrated circuits -- Design and construction, Integrated circuits -- Research, Semiconductor chips -- Design and construction, Semiconductor chips -- Research, Standard IC, Business, Electronics, Electronics and electrical industries
Abstract

The ever-decreasing charge required to represent a logic HIGH state at a circuit node has resulted in increased vulnerability of advanced ICs to Single-Event Upsets. Design approaches that address this threat to reliable operation of ICs are needed. The approach presented here uses logical masking through approximate functions to reduce the single-event error rate of a given circuit. Results on benchmark circuits show the effectiveness of this approach for mitigating the threat of SEU's. Index Terms--Integrated circuit radiation effects, logic design, logical masking, single-event upsets, soft error rate.

Published
2006

19. Satometer: how much have we searched?

Author

Aloul, Fadi A., Sierawski, Brian D., and Sakallah, Karem A.

Subjects
Mathematical logic -- Research, Symbolic and mathematical logic -- Research, Computer-aided design -- Research, Algebra, Boolean -- Research, Algebra, Boolean -- 2002 AD, Computer-aided design -- 2002 AD, Mathematical logic -- 2002 AD, Symbolic and mathematical logic -- 2002 AD
Published
2003

20. Sensitive-Volume Model of Single-Event Latchup for a 180-nm SRAM Test Structure

Author

Wang, Peng, primary, Sternberg, Andrew L., additional, Sierawski, Brian D., additional, Zhang, En Xia, additional, Warren, Kevin M., additional, Tonigan, Andrew M., additional, Brewer, Rachel M., additional, Dodds, Nathaniel A., additional, Vizkelethy, Gyorgy, additional, Jordan, Scott L., additional, Fleetwood, Daniel M., additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2020
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24. CREME: The 2011 Revision of the Cosmic Ray Effects on Micro-Electronics Code

Author

Adams, James H., Jr, Barghouty, Abdulnasser F, Reed, Robert A, Sierawski, Brian D, and Watts, John W., Jr

Subjects
Electronics And Electrical Engineering
Abstract

We describe a tool suite, CREME, which combines existing capabilities of CREME96 and CREME86 with new radiation environment models and new Monte Carlo computational capabilities for single event effects and total ionizing dose.

Published
2012

25. The RadFxSat Mission to Study Radiation Effects on Advanced Nanoelectronics

Author

Sierawski, Brian D., Austin, Rebekah A., Trippe, James M., Warren, Kevin M., Sternberg, Andrew L., Reed, Robert A., Weller, Robert A., Skoog, Eric, Buxton, Gerald W., III, Fisher, W. Burns, Davis, Robert, and Thompson, Christopher E.

Subjects
radiation, nanoelectronics, mission, radfxsat, effects
Abstract

The RadFxSat mission was launched on November 18, 2017 with the Joint Polar Satellite System-1 (JPSS-1) under the NASA ELaNa XIV initiative. RadFxSat, now designated at AO-91, is an AMSAT Fox bus carrying a Vanderbilt University radiation effects payload. Embedded in the sub-audible range of voice transmissions are the telemetry conveying the status of the spacecraft and payload. Since launch, hundreds of amateur radio operators have submitted thousands of telemetry packets. These data can be retrieved using AMSAT’s FoxTelem software and are being used by researchers to measure the effects of ionizing radiation on modern commercial electronics.

Published
2019

26. Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak

Author

Pellish, Jonathan A, Xapsos, Michael A, LaBel, Kenneth A, Marshall, Paul W, Heidel, David F, Rodbell, Kennth P, Hakey, Mark C, Dodd, Paul E, Shanneyfelt, Marty R, Schwank, James R, Baumann, Robert C, Deng, Xiaowei, Marshall, Andrew, Sierawski, Brian D, Black Jeffrey D, Reed, Robert A, Schrimpf, Ronald D, Kim, Hak S, Berg, Melanie D, Campola, Michael J, Friendlich, Mark R, Perez, Christopher E, Phan, Anthony M, and Seidleck, Christina M

Subjects
Space Radiation
Abstract

A 1 GeV/u 5 6Fe ion beam allows for true 90deg tilt irradiations of various microelectronic c-0mponents and reveals relevant upset trends at the GCR Hux energy peak. Three SRAMs and an SRAM-based FPGA evaluated at the NASA Space Radiation Effects Laboratory demonstrate that a 90deg tilt irradiation yields a unique device response. These tilt angle effects need t-0 be screened for, and if found, pursued with radiation transport simulations to quantify their impact on event rate calculations.

Published
2009

27. Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

Author

Howe, Christina L, Weller, Robert A, Reed, Robert A, Sierawski, Brian D, Marshall, Paul W, Marshall, Cheryl J, Mendenhall, Marcus H, and Schrimpf, Ronald D

Subjects
Physics Of Elementary Particles And Fields
Abstract

The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

Published
2007

28. RadFxSat: A Flight Campaign for Recording Single-Event Effects in Commercial Off-the-Shelf Microelectronics

Author

Austin, Rebekah A., primary, Sierawski, Brian D., additional, Trippe, James M., additional, Sternberg, Andrew L., additional, Warren, Kevin M., additional, Reed, Robert A., additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Alles, Michael L., additional, Massengill, Lloyd W., additional, Fleetwood, Daniel M., additional, Buxton, Gerald W., additional, Brandenburg, Jonathan C., additional, Fisher, W. Burns, additional, and Davis, Robert, additional

Published
2017
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29. CubeSat: Real-time soft error measurements at low earth orbits

Author

Sierawski, Brian D., primary, Reed, Robert A., additional, Warren, Kevin M., additional, Sternberg, Andrew L., additional, Austin, Rebekah A., additional, Trippe, James M., additional, Weller, Robert A., additional, Alles, Michael L., additional, Schrimpf, Ronald D., additional, Massengill, Lloyd W., additional, Fleetwood, Daniel M., additional, Buxton, Gerald W., additional, Brandenburg, Jonathan C., additional, Fisher, W. Burns, additional, and Davis, Robert, additional

Published
2017
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30. Radiation Response and Adaptive Control-Based Degradation Mitigation of MEMS Accelerometers in Ionizing Dose Environments

Author

Pitt, E. Bryn, primary, Barth, Eric J., additional, Diggins, Zachary J., additional, Mahadevan, Nagabhushan, additional, Karsai, Gabor, additional, Sierawski, Brian D., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Weller, Robert A., additional, Alles, Michael L., additional, and Witulski, Arthur F., additional

Published
2017
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32. CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance

Author

Sierawski, Brian D., primary, Warren, Kevin M., additional, Sternberg, Andrew L., additional, Austin, Rebekah A., additional, Trippe, James M., additional, McCurdy, Michael W., additional, Reed, Robert A., additional, Weller, Robert A., additional, Alles, Michael L., additional, Schrimpf, Ronald D., additional, Massengill, Lloyd W., additional, Fleetwood, Daniel M., additional, Monteiro, Anthony, additional, Buxton, Gerald W., additional, Brandenburg, Jonathan C., additional, Fisher, W. Burns, additional, and Davis, Robert, additional

Published
2017
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33. Bayesian Inference Modeling of Total Ionizing Dose Effects on System Performance

Author

Diggins, Zachary J., primary, Mahadevan, Nagabhushan, additional, Pitt, E. Bryn, additional, Herbison, Daniel, additional, Hood, Rebecca M., additional, Karsai, Gabor, additional, Sierawski, Brian D., additional, Barth, Eric J., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Weller, Robert A., additional, Alles, Michael L., additional, and Witulski, Arthur F., additional

Published
2015
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34. Effects of Energy-Deposition Variability on Soft Error Rate Prediction

Author

Weeden-Wright, Stephanie L., primary, King, Michael P., additional, Hooten, Nicholas C., additional, Bennett, William G., additional, Sierawski, Brian D., additional, Schrimpf, Ronald D., additional, Weller, Robert A., additional, Reed, Robert A., additional, Mendenhall, Marcus H., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, and Baumann, Robert C., additional

Published
2015
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36. System Health Awareness in Total-Ionizing Dose Environments

Author

Diggins, Zachary J., primary, Mahadevan, Nagabhushan, additional, Pitt, E. Bryn, additional, Herbison, Daniel, additional, Karsai, Gabor, additional, Sierawski, Brian D., additional, Barth, Eric J., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Weller, Robert A., additional, Alles, Michael L., additional, and Witulski, Arthur F., additional

Published
2015
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37. Total-Ionizing-Dose Induced Timing Window Violations in CMOS Microcontrollers

Author

Diggins, Zachary J., primary, Mahadevan, Nagabhushan, additional, Herbison, Daniel, additional, Karsai, Gabor, additional, Sierawski, Brian D., additional, Barth, Eric, additional, Pitt, E. Bryn, additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Weller, Robert. A., additional, Alles, Michael L., additional, and Witulski, Arthur, additional

Published
2014
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38. The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets

Author

Clemens, Michael Andrew, primary, Sierawski, Brian D., additional, Warren, Kevin M., additional, Mendenhall, Marcus H., additional, Dodds, Nathaniel A., additional, Weller, Robert A., additional, Reed, Robert A., additional, Dodd, Paul E., additional, Shaneyfelt, Marty R., additional, Schwank, James R., additional, Wender, Stephen A., additional, and Baumann, Robert C., additional

Published
2011
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42. Effects of scaling on muon-induced soft errors

Author

Sierawski, Brian D., primary, Reed, Robert A., additional, Mendenhall, Marcus H., additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Wen, Shi-Jie, additional, Wong, Richard, additional, Tam, Nelson, additional, and Baumann, Robert C., additional

Published
2011
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44. Muon-Induced Single Event Upsets in Deep-Submicron Technology

Author

Sierawski, Brian D., primary, Mendenhall, Marcus H., additional, Reed, Robert A., additional, Clemens, Michael A., additional, Weller, Robert A., additional, Schrimpf, Ronald D., additional, Blackmore, Ewart W., additional, Trinczek, Michael, additional, Hitti, Bassam, additional, Pellish, Jonathan A., additional, Baumann, Robert C., additional, Wen, Shi-Jie, additional, Wong, Rick, additional, and Tam, Nelson, additional

Published
2010
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46. Heavy Ion Testing With Iron at 1 GeV/amu

Author

Pellish, Jonathan A., primary, Xapsos, Michael A., additional, LaBel, Kenneth A., additional, Marshall, Paul W., additional, Heidel, David F., additional, Rodbell, Kenneth P., additional, Hakey, Mark C., additional, Dodd, Paul E., additional, Shaneyfelt, Marty R., additional, Schwank, James R., additional, Baumann, Robert C., additional, Deng, Xiaowei, additional, Marshall, Andrew, additional, Sierawski, Brian D., additional, Black, Jeffrey D., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Kim, Hak S., additional, Berg, Melanie D., additional, Campola, Michael J., additional, Friendlich, Mark R., additional, Perez, Christopher E., additional, Phan, Anthony M., additional, and Seidleck, Christina M., additional

Published
2010
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49. Satometer: How Much Have We Searched? (Preprint)

Author

MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE, Aloul, Fadi A., Sierawski, Brian D., Sakallah, Karem A., MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE, Aloul, Fadi A., Sierawski, Brian D., and Sakallah, Karem A.

Abstract

We introduce Satometer, a tool that can be used to estimate the percentage of the search space actually explored by a backtrack SAT solver. Satometer calculates a normalized minterm count for those portions of the search space identified by conflicts. The computation is carried out using a zero-suppressed binary decision diagram (ZBDD) data structure and can have adjustable accuracy. The data provided by Satometer can help diagnose the performance of SAT solvers and can shed light on the nature of a SAT instance., Presented at the Design Automation Conference (39th), DAC 2002, held New Orleans, LA on 10-14 Jun 2002 and published in proceedings, p737-742, 2002; ISBN 1-58113-461-4. Also published in IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems, v22, n8, p995-1004, Aug 2003. The original document contains color images.

Published
2002

50. Heavy ion testing at the galactic cosmic ray energy peak

Author

Pellish, Jonathan A., primary, Xapsos, Michael A., additional, LaBel, Kenneth A., additional, Marshall, Paul W., additional, Heidel, David F., additional, Rodbell, Kenneth P., additional, Hakey, Mark C., additional, Dodd, Paul E., additional, Shaneyfelt, Marty R., additional, Schwank, James R., additional, Baumann, Robert C., additional, Deng, Xiaowei, additional, Marshall, Andrew, additional, Sierawski, Brian D., additional, Black, Jeffrey D., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, Kim, Hak S., additional, Berg, Melanie D., additional, Campola, Michael J., additional, Friendlich, Mark R., additional, Perez, Christopher E., additional, Phan, Anthony M., additional, and Seidleck, Christina M., additional

Published
2009
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