A generalized SiGe HBT single-event effects model for on-orbit event rate calculations

This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions. Index Terms--Deep trench isolation, Geant4, geosynchronous orbit, low-earth orbit, rate prediction, silicon-germanium HBT, single-event upset.