Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch

Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event upset. TCAD and SPICE analysis demonstrate a SEU mechanism dominated by multiple node charge collection. Monte Carlo simulation is used to model the response and predict an on-orbit error rate. Index Terms--Geant4, MRED, rate prediction, SEU.